◆ Refereed Journal ◆



Research Record TOP

    2021年

  1. T. Mizuno, R. Kanazawa, K. Yamamoto, K. Murakawa, K. Yoshimizu, M. Tanaka, T. Aoki, and T. Sameshima : "Group-IV-semiconductor quantum-dots in thermal SiO2 layer fabricatedby hot-ion implantation technique: different wavelength photon emissions", Jpn. J. Appl. Phys. 60, (2021) SBBK08-1-11.PDFファイルダウンロード

    2. PAGE TOP


    2020年

  2. T. SAMESHIMA, T. NAGAO, E. SEKIGUCHI, AND M. HASUMI : "Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures", IEEE Access 8 (2020) 72598-72606.PDFファイルダウンロード
  3. T. Mizuno, R. Kanazawa, T. Aoki, and T. Sameshima : "SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique", Jpn. J. Appl. Phys. 59, (2020) SGGH02-1-12.PDFファイルダウンロード

    4. PAGE TOP


    2019年

  4. T. Sameshima, T. Kikuchi, T. Uehara, T. Arima, M. Hasumi, T. Miyazaki, G. Kobayashi, and I. Serizawa : "MICROWAVE RAPID HEATING SYSTEM USING CARBON HEATING TUBE", AMPERE 2019, (2019) 318-325.PDFファイルダウンロード
  5. T. Mizuno, M. Yamamoto, S. Nakada, S. Irie, T. Aoki, and T. Sameshima : "SiC nano-dot formation in bulk-Si substrate using hot-C+-ion implantation process", Jpn. J. Appl. Phys. 58, (2019) 081004-1-12.PDFファイルダウンロード
  6. T. Sameshima, T. Miyazaki, G. Kobayashi, T. Arima, T. KIKUCHI, T. Uehara, T. Sugawara, M. Hasumi and I. Serizawa: "Carbon Heating Tube Used for Rapid Heating System", IEEE Access 7 (2019) 23798-23805.PDFファイルダウンロード
  7. T. Mizuno, R. Kanazawa, T. Aoki, and T. Sameshima: "SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation techniqu", Jpn. J. Appl. Phys. 58, (2019) SBBJ01-1-10.PDFファイルダウンロード

    8. PAGE TOP


    2018年

  8. M. Hasumi, Y. Ogawa, K. Oshinari, J. Shirakashi, W. Kubo and T. Sameshima: "Reduction in connecting resistivity and optical reflection loss at intermediate layer for mechanically stacked multijunction solar cells", Jpn. J. Appl. Phys. 57 (2018) 102301-1-6.PDFファイルダウンロード
  9. T. Sameshima, Y. Ogawa, and M. Hasumi: "Reduction in optical reflection at intermediateadhesive layer for mechanically stacked multijunction solar cells", Advanced Materials Proceedings 3 (2018) 361-365.PDFファイルダウンロード
  10. T. Sameshima, K. Yasuta, M. Hasumi, T. Nagao, and Y. Inouchi: "Activation of dopant in silicon by ion implantation under heating sample at 200 °C", Appl. Phys. A 124 (2018) 228-1-6.PDFファイルダウンロード

    11. PAGE TOP


    2017年

  11. T. Mizuno, T. Nimura, Y. Omata, Y. Nagamine, T. Aoki, and T. Sameshima: "Material structure of two-/three-dimensional Si-C layers fabricated by hot-C+-ion implantation into Si-on-insulator substrate", Jpn. J. Appl. Phys. 56 (2017) 04CB03-1-8.PDFファイルダウンロード
  12. T. Sameshima, T. Nimura, T. Sugawara, Y. Ogawa, S. Yoshidomi, S. Kimura, and M. Hasumi: "Indium gallium zinc oxide layer used to decrease optical reflection loss at intermediate adhesive region for fabricating mechanical stacked multijunction solar cells", Jpn. J. Appl. Phys. 56 (2017) 012602-1-7.PDFファイルダウンロード

    13. PAGE TOP


    2016年

  13. S. Kimura, K. Ota, M. Hasumi, A. Suzuki, M. Ushijima, and T. Sameshima: "Crystallization and activation of silicon by microwave rapid annealing", Appl. Phys. A. 122 (2016) 695-1-9.PDFファイルダウンロード
  14. T. Nakamura, T. Motoki, J. Ubukata, T. Sameshima, M. Hasumi and T. Mizuno: "Heat treatment in 110oC liquid water used for passivating siliconsurfaces", Appl. Phys. A. 122 (2016) 440-1-8.PDFファイルダウンロード
  15. T. Mizuno, Y. Nagamine, Y. Omata, Y. Suzuki, W. Urayama, T. Aoki, and T. Sameshima: "C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys", Jpn. J. Appl. Phys. 55 (2016) 04EB02-1-8.PDFファイルダウンロード
  16. T. Sameshima and M. Hasumi: "Behavior of Photo Induced Minority Carrier Lifetime in PN Junction with Different Bias Voltages", Energy Procedia 84 (2015) 110-117.PDFファイルダウンロード

    17. PAGE TOP


    2015年

  17. S. Yoshidomi, S. Kimura, M. Hasumi, and T. Sameshima: "Indium-gallium-zinc-oxide layer used to increase light transmittance efficiency of adhesive layer for stacked-type multijunction solar cells", Jpn. J. Appl. Phys. 54 (2015) 112301-1-5.PDFファイルダウンロード
  18. T. Nakamura, T. Sameshima, M. Hasumi, and T. Mizuno: "Passivation of silicon surfaces by heat treatment in liquid water at 110oC", Jpn. J. Appl. Phys. 54 (2015) 106503-1-7.PDFファイルダウンロード
  19. T. Sameshima, T. Motoki, K. Yasuda, T. Nakamura, M. Hasumi, and T. Mizuno: "Photoinduced carrier annihilation in silicon pn junction", Jpn. J. Appl. Phys. 54 (2015) 081302-1-6.PDFファイルダウンロード
  20. T. Mizuno, Y. Nagamine, Y. Suzuki, Y. Nakahara, Y. Nagata. T. Aoki and T. Sameshima: "Impurity doping effects on impurity band structure modulationin two-dimensional n+ and p+ Si layers for future CMOS devices", Jpn. J. Appl. Phys. 54 (2015) 04DC05-1-6.PDFファイルダウンロード
  21. T. Sameshima, M. Hasumi, and T. Mizuno: "Laser annealing of plasma-damaged silicon surface", Applied Surface Science, 336 (2015) 73-78.PDFファイルダウンロード

    22. PAGE TOP


    2014年

  22. S. Yoshidomi, J. Furukawa, M. Hasumi and T. Sameshima: "Mechanical Stacking Multi Junction Solar Cells Using Transparent Conductive Adhesive", Energy Procedia 60 (2014) 116-122.PDFファイルダウンロード
  23. H. Abe, C. Akiyama, M. Hasumi, T. Sameshima, T. Mizuno, and N. Sano: "Passivation of Silicon Surface by Laser Rapid Heating", Journal of Laser Micro/Nanoengineering. 9 (2014) 143-146.PDFファイルダウンロード
  24. T. Sameshima and S. Shibata: "Annihilation of photo induced minority carrier caused by ion implantation and rapid thermal annealing", Jpn. J. Appl. Phys. 53 (2014) 061301-1-6.PDFファイルダウンロード
  25. T. Sameshima, H. Nomura, S. Yoshidomi, and M. Hasumi: "Multi junction solar cells using band-gap induced cascaded light absorption", Jpn. J. Appl. Phys. 53 (2014) 05FV07-1-4.PDFファイルダウンロード
  26. M. Hasumi, T. Nakamura, S. Yoshidomi, and T. Sameshima: "Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source", Jpn. J. Appl. Phys. 53 (2014) 05FV05-1-6.PDFファイルダウンロード
  27. S. Yoshidomi, M. Hasumi, T. Sameshima: "Investigation of conductivity of adhesive layer including indium tin oxide particles for multi-junction solar cells", Appl. Phys. A. 116 (2014) 2113-2118PDFファイルダウンロード
  28. T. Mizuno, Y. Nagata, Y. Suzuki, Y. Nakahara, Y. Nagamine, K. Saita, T. Aoki and T. Sameshima: "Crystal direction dependence of quantum confinement effects of two-dimensional Si layers fabricated on silicon-on-quartz substrates: modulation of phonon spectra and energy band structures", Jpn. J. Appl. Phys. 53 (2014) 04EC09-1-6.PDFファイルダウンロード
  29. T. Mizuno, Y. Nakahara, Y. Nagata, Y. Suzuki, T. Aoki and T. Sameshima: "Quantum confinement effects in doped two-dimensional Si layers: Novel device design for two-dimensional pn-junction structures", Jpn. J. Appl. Phys. 53 (2014) 04EC08-1-7.PDFファイルダウンロード
  30. T. Sameshima, J. Furukawa, T. Nakamura, S. Shigeno, T. Node, S. Yoshudomi, and M. Hasumi: "Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure", Jpn. J. Appl. Phys. 53 (2014) 031301-1-6.PDFファイルダウンロード

    31. PAGE TOP


    2013年

  31. T. Mizuno, T. Aoki, Y. Nagata, Y. Nakahara, and T. Sameshima: "Experimental Study on Surface-Orientation/Strain Dependence of Phonon Confinement Effects and Band Structure Modulation in Two-Dimensional Si Layers", Jpn. J. Appl. Phys. 52 (2013) 04CC13-1-8.PDFファイルダウンロード
  32. T. Sameshima, J. Furukawa, and S. Yoshidomi: "Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon", Jpn. J. Appl. Phys. 52 (2013) 041303-1-6.PDFファイルダウンロード
  33. T. Sameshima, R. Ebina, K. Bestuin, Y. Takiguchi, and M. Hasumi: "Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement", Jpn. J. Appl. Phys 52 (2013) 011801-1-6.PDFファイルダウンロード

    34. PAGE TOP


    2012年

  34. T. Sameshima, K. Betsuin, T. Mizuno and N. Sano: "Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating", Jpn. J. Appl. Phys. 51 (2012)03CA04-1-6.PDFファイルダウンロード
  35. T. Sameshima, T. Nagao, M. Hasumi, A.Shuku, E.Takahashi and Y. Andoh: "Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment", Jpn. J. Appl. Phys 51 (2012) 03CA06-1-6.PDFファイルダウンロード
  36. T. Sameshima, Y. Kanda , M. Hasumi, J. Tatemichi, Y. Inouchi, M. Naito: "Laser Induced Formation of Buried Void Layer in Silicon ", J. Laser Micro/Nanoengineering, 7(2012) 93-96.PDFファイルダウンロード
  37. T. Mizuno, K. Tobe, Y. Maruyama, and T. Sameshima: "Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices: Phonon/Band Structures Modulation Due to Quantum Confinement Effects", Jpn. J. Appl. Phys. 51 (2012) 02BC03-1-8.PDFファイルダウンロード
  38. T. Sameshima and M. Hasumi: " Infrared semiconductor laser irradiation used for crystallization of silicon thin films", J. of Non-Crystalline Solids 358 (2012) 2162-2165.PDFファイルダウンロード
  39. J. Takenezawa, M. Hasumi, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa, and M. Kondo: "Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H2O Vapor", J. of Non-Crystalline Solids 358 (2012) 2285-2288.PDFファイルダウンロード

    40. PAGE TOP


    2011年

  40. T. Sameshima, J. Takenezawa, M. Hasumi, T. Koida, T. Kaneko, M. Karasawa and M. Kondo, "Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive", Jpn. J.Appl. Phys. 50 (2011) 052301-1-4.PDFファイルダウンロード
  41. T. Sameshima, T. Nagao, S. Yoshidomi, K. Kogure and M. Hasumi, "Minority Carrier Lifetime Measurements by Photo-Induced Carrier Microwave Absorption Method", Jpn. J.Appl. Phys. 50 (2011) 03CA02-1-8.PDFファイルダウンロード
  42. M. Hasumi, J. Takenezawa, T. Nagao and T. Sameshima, "Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method",Jpn. J.Appl. Phys. 50 (2011) 03CA03-1-5.PDFファイルダウンロード

    43. PAGE TOP


    2010年

  43. T. Sameshima, K. Kogure and M. Hasumi, "Crystalline Silicon Solar Cells with Two Different Metals", Jpn. J.Appl. Phys. 49 (2010) 110205-1-3.PDFファイルダウンロード
  44. K. Ukawa, Y. Kanda, T. Sameshima, N. Sano, M. Naito and N. Hamamoto, "Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing", Jpn. J.Appl. Phys. 49 (2010) 076503-1-7.PDFファイルダウンロード
  45. T. Mizuno, N. Mizoguchi, K. Tanimoto, T. Yamauchi, M. Hasegawa, T. Sameshima, and T. Tezuka, "New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors: Relaxation Technique of Strained Substratesand Design of Sub-10 nm Devices", Jpn. J.Appl. Phys. 49 (2010) 04DC13-1-7.PDFファイルダウンロード
  46. T. Sameshima, Y. Mizutani, K. Motai and K. Ichimura, "Defect Reduction in Polycrystalline Silicon Thin Films at 150oC", Jpn. J.Appl. Phys. 49 (2010) 03CA02-1-4.PDFファイルダウンロード

    47. PAGE TOP


    2009年

  47. T. Sameshima, K. Kogure, S. Yoshidomi, T. Haba, M. Hasumi and N. Sano, "Crystallization of Silicon Thin Films by Infrared Semiconductor Laser Irradiation Using Carbon Particles", Journal of Laser Micro/Nanoengineering. 4 (2009) 227-230.PDFファイルダウンロード
  48. T. Sameshima, H. Hayasaka, and T. Haba, "Analysis of Microwave Absorption Caused by Free Carriers in Silicon", Jpn. J.Appl. Phys. 48 (2009) 021204-1-6.PDFファイルダウンロード
  49. T. Sameshima, "Laser Crystallization for Large Area Electronics", Appl. Phys. 96 (2009) pp137-144. (invited)PDFファイルダウンロード

    50. PAGE TOP


    2008年

  50. Y.Urabe, T. Ssmeshima K. Motai and K. Ichimura "Improvement in SiO2 Film Properties Formed by Sputtering Method at 150oC", Jpn. J.Appl. Phys. 47 (2008) 8003-8006PDFファイルダウンロード
  51. T. Sameshima, Y. Matsuda, Y. Andoh, and N. Sano, "Recrystallization behavior of silicon implanted with phosphorus atoms by infrared semiconductor laser annealing", Jpn. J.Appl. Phys. 47 (2008) 1871-1875 PDFファイルダウンロード
  52. K. Yoshioka, T. Sameshima and N. Sano, "Progress in Fabrication Processing of Thin Film Transistors", Solid-State Electronics 52 (2008)359-364. PDFファイルダウンロード

    53. PAGE TOP


    2007年

  53. K. Yoshioka, T. Sameshima, T. Iwasaki, and K. Takechi, "Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress", Jpn. J.Appl. Phys. 46 (2007) 6469-6473. PDFファイルダウンロード
  54. T. Sameshima, M. Maki, M. Takiuchi, N. Andoh, N. Sano, Y. Matsuda and Y. Andoh "Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing", Jpn. J.Appl. Phys. 46 (2007) 6474-6479. PDFファイルダウンロード
  55. N. Sano, M. Maki, N. Andoh and T. Sameshima, Y. Matsuda, and Y. Andoh, "Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers", Jpn. J.Appl. Phys. 46 (2007) L620-L622.PDFファイルダウンロード
  56. N. Sano, M. Maki, N. Andoh and T. Sameshima, "Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer", Jpn. J.Appl. Phys. 46 (2007) 1254-1257.PDFファイルダウンロード
  57. T. Sameshima, H. Hsyasaka, M. Maki, A. Masuda, T. Matsui, and M. Kondo, "Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor", Jpn. J.Appl. Phys. 46 (2007) 1286-1289.PDFファイルダウンロード

    58. PAGE TOP


    2006年

  58. H. Watakabe, T. Sameshima, H. Kanno, M. Miyao, "Electrical properties for poly-Ge films fabricated by pulsed laser annealing", Thin Solid films 508 (2006) 315-317.PDFファイルダウンロード
  59. Punchaipetch, M. Miyashita, Y. Uraoka, T. Fuyuki, T. Sameshima and S. Horii, "Improving high-κ gate dielectrics properties by high pressure water vapor annealing", Jpn. J.Appl. Phys. 45 (2006) L120-L123.PDFファイルダウンロード
  60. T. Sameshima and M. Kimura, "Characterization of Polycrystalline Silicon Thin-Film Transistors", Jpn. J.Appl. Phys. 45 (2006) 1534-1539.PDFファイルダウンロード
  61. T. Sameshima, H. Watakabe, N. Andoh and S. Higashi,"Pulsed Laser Annealing of Thin Silicon Films", Jpn. J.Appl. Phys. 45 (2006) 2437-2440.PDFファイルダウンロード

    62. PAGE TOP


    2005年

  62. H. Watakabe, T. Sameshima, T. Strutz, T. Oitome and A. Kohno,"Defect Reduction Treatment for Plasma-TEOS-SiO2 by High Pressure H2O Vapor Heat Treatment", Jpn. J.Appl. Phys. 44 (2005) 8367-8370.PDFファイルダウンロード
  63. T. Sameshima and N. Andoh, "Heating Layer of Diamond Like Carbon Films Used for Crystallization of Silicon Films", Jpn. J.Appl. Phys. 44 (2005)7305-7308.PDFファイルダウンロード
  64. T. Sameshima, K. Yoshioka and K. Takechi, "Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates", Jpn. J.Appl. Phys. 44(2005)6421-6424.PDFファイルダウンロード
  65. T. Sameshima, "Progress in fabrication technologies of polycrystalline-silicon thin-film transistors at low temperatures", J. Soc. Inf. Display 13 (2005) p233-239.
  66. T. Sameshima, N. Andoh and Y. Andoh, "Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250 oC", Jpn. J.Appl. Phys. 44 (2005) 1186-1191. PDFファイルダウンロード
  67. N. Andoh, T. Sameshima and Y. Andoh, "Activation of Boron and Phosphorus Atoms implanted in Polycrystalline Silicon Films at Low Temperatures", Thin Solid films 487 (2005) 252-254. PDFファイルダウンロード
  68. N. Andoh, T. Sameshima and K. Kitahara, "Crystallization of silicon films by rapid joule heating method", Thin Solid films 487 (2005) 118-121. PDFファイルダウンロード
  69. T. Sameshima, H.Watakabe, N. Andoh and S. Higashi, "Pulsed Laser Crystallization of Very Thin Silicon Films", Thin Solid films 487 (2005) 63-66. PDFファイルダウンロード
  70. T. Sameshima, H.Watakabe, and H. Kanno, T. Sadoh, M.Miyao,"Pulsed Laser Crystallization of Silicon-Germanium Films", Thin Solid films 487 (2005) 67-71. PDFファイルダウンロード

    71. PAGE TOP


    2004年

  71. H. Watakabe and T. Sameshima, H. Kanno, T. Sadoh and M. Miyao, "Electrical and structural properties of poly-SiGe film formed by pulsed laser annealing", J. Appl. Phys. 95 (2004) 6457-6461.PDFファイルダウンロード
  72. T. Sameshima, K. Motai, and N. Andoh, "Characterization of Polycrystalline Silicon Thin Films Fabricated by Rapid Joule Heating Method ", Appl. Phys. A79 (2004) 599-603.PDFファイルダウンロード

    73. PAGE TOP


    2003年

  73. Y. Kaneko N. Andoh and T. Sameshima, " Polycrystalline Silicon Thin Film Transistors Fabricated by Rapid Joule Heating Method”, IEEE Electron Device Letters 24 (2003)586-588.PDFファイルダウンロード
  74. T. Sameshima, Y. Kaneko and N. Andoh, " Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors", Jpn. J.Appl. Phys. 42 (2003)5461-5464. PDFファイルダウンロード
  75. H. Watakabe, T. Sameshima, " Oxygen plasma and high pressure H2O vapor heat treatments used to fabricate polycrystalline silicon thin film transistors ", Appl. Phys. A77 (2003) 141-144.PDFファイルダウンロード
  76. T. Kamiya, T. Sameshima H. Mizuta, Y. Furuta, "Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices ", Z.A.K. Durrani, J. Vac. Sci. Technol. B 21 (2003) 1000-1003.
  77. T. Watanabe, H. Watakabe, K. Asada, T. Sameshima and M. Miyasaka, " Electrical Structural Properties of Solid Phase Crystallized Polycrystalline Silicon films and Their Improvements ", Appl. Phys. A77 (2003) 87-92.PDFファイルダウンロード

    78. PAGE TOP


    2002年

  78. 安藤伸行、大北圭介、鮫島俊之, "電流加熱結晶化法によるシリコン薄膜の結晶化",電子情報通信学会論文誌　Ｃ　Vol. J85-C No. 8, (2002) 639-643.PDFファイルダウンロード
  79. H. Watakabe and T. Sameshima, "Polycrystalline Silicon Thin FilmTransistors Fabricated by Defect Reduction Methods", IEEE Trans. Electron device 49 (2002) 2217- 2221.PDFファイルダウンロード
  80. Y. Kaneko N. Andoh and T. Sameshima, "Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Thin Film Transistors", Jpn. J. Appl. Phys. 41(2002) L913-915. PDFファイルダウンロード
  81. H. Watakabe and T. Sameshima, "High Pressure H2O vapor Heat treatment Used to Fabricate Poly-Si Thin Film Transistors", Jpn. J. Appl. Phys. 41(2002) L974-977. PDFファイルダウンロード
  82. N. Andoh and T. Sameshima, "Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating", Jpn. J. Appl. Phys. 41 (2002) 5513-5516. PDFファイルダウンロード
  83. T. Sameshima, Y.Kaneko and N. Andoh, "Rapid Joule Heating of Metal Films Used to Crystallize Silicon Films", Appl.Phys.A74 (2002) 719-723 (invited).PDFファイルダウンロード
  84. T. Sameshima, Y. Kaneko and N. Andoh, "Rapid Crystallization of Silicon Films Using Pulsed Current-Induced Joule Heating", J. of Non-Crystalline Solids 299-302 (2002) 746-750.PDFファイルダウンロード
  85. H. Watakabe, Y. Tsunoda, N. Andoh and T. Sameshima, "Characterization and Control of Defect States of Polycrystalline Silicon Thin Film Transistor Fabricated by Laser Crystallization", J. of Non-Crystalline Solids 299-302 (2002)1321-1325.PDFファイルダウンロード

    86. PAGE TOP


    2001年

  86. T. Kamiya, A. Suemasu, T. Watanabe, T. Sameshima and I. Shimizu, "Improvement of Transport Properties for Polycrystalline Silicon Prepared by Plasma-Enhanced Chemical Vapor Deposition", Appl.Phys.A73 (2001)151-159.PDFファイルダウンロード
  87. M. Kimura, S. Inoue, T. Shimoda and T. Sameshima, "Device Simulation of Carrier Transport Through Grain Baundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density", Jpn. J. Appl. Phys. 40 (2001) 5237-5243. PDFファイルダウンロード
  88. T. Sameshima, Y. Kaneko and N. Andoh, "Rapid Crystallization of Silicon Films Using Joule Heating of Metal Films", Appl Phys. A 73 (2001) 419-423.PDFファイルダウンロード
  89. S. Higashi and T. Sameshima, "Pulsed Laser Induced Microcrystallization and Amorphization of Silicon Thin Films", Jpn. J. Appl. Phys. 40 (2001) 480-485. PDFファイルダウンロード
  90. M. Kimura, S. Inoue, T. Shimoda and T. Sameshima, "Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density", Jpn. J. Appl. Phys 40 (2001) 49-53. PDFファイルダウンロード
  91. M. Kimura, S. Inoue, T. Shimoda and T. Sameshima, "Current Paths over Grain Boundaries in Polycrystalline Silicon Films", Jpn. J. Appl. Phys. 40 (2001)L97-99.PDFファイルダウンロード
  92. T. Watanabe, T. Sameshima and M. Ide, "Etching of Buried Photoresist Layers and Its Application to Formation of Three Dimensional Layered Structure", Appl. Phys A 73 (2001) 429-432.PDFファイルダウンロード
  93. T. Sameshima, N. Andoh and H. Takahashi, "Rapid Crystallization of Silicon Films Using Electrical-Current-Induced Joule Heating" , J. Appl. Phys. 89 (2001) 5362-5367.
  94. T. Sameshima and K. Ozaki, "Crystallization of Silicon Thin Films by Current- Induced Joule Heating", Appl. Surface Science 383 (2001) 107-109.PDFファイルダウンロード
  95. T. Watanabe, T. Sameshima, "Free Carrier Optical Absorption used to Analyze the Electrical Properties of Polycrystalline Silicon Films Formed by Plasma Enhanced Chemical Vapor Deposition", Appl. Surface Science 383 (2001) 248-250PDFファイルダウンロード
  96. N. Andoh, K. Hayashi, T. Shirasawa, T. Sameshima and K. Kamisako, "Effect of Film Thickness on Electrical Property of microcrystalline silicon films", Solar Energy Materials & Solar Cells 66(2001)437-441.PDFファイルダウンロード
  97. N. Andoh, K. Kamisako, T. Sameshima and T. Saitoh, "Epitaxial Growth of Polycrystalline Films Formed by Microwave Plasma Chemical Vapor Deposition at Low Temperatures", Solar Energy Materials &Solar Cells 66 (2001)431-435.PDFファイルダウンロード
  98. T. Sameshima, K. Sakamoto, K. Asada, M. Kondo, A. Matsuda and S. Higashi, "Reduction of Defects of Polycrystalline Thin Films by Heat Treatment with High Pressure H2O Vapor", Solar Energy Materials & Solar Cells 65 (2001)577-583. PDFファイルダウンロード
  99. S. Ishigame, K. Ozaki, T. Sameshima and S. Higashi, "Characterization of Pulsed Laser Crystallization of Silicon Thin Film", Solar Energy Materials & Solar Cells 66 (2001)381-387. PDFファイルダウンロード
  100. S. Sakamoto, K. Asada, T. Sameshima and T. Saitoh, "High-Pressure H2O Vapor Heating Used for Passivation of SiO2/Si Interfaces", Solar Energy Materials & Solar Cells 65 (2001) 571-576.PDFファイルダウンロード
  101. S. Sakamoto, K. Asada and T. Sameshima, "Field Effect Surface Passivation of SiO2/Si Interfaces by Heat Treatment with High-Pressure H2O Vapor", Solar Energy Materials & Solar Cells 65 (2001)565-570. PDFファイルダウンロード
  102. T. Sameshima, K. Saitoh, N. Aoyama, M. Tanda, M. Kondo, A. Matsuda and S. Higashi, "Analysis of Free Carrier Optical Absorption Used for Characterization of Microcrystalline Silicon Films", Solar Energy Materials & Solar Cells 66(2001)389-395.PDFファイルダウンロード
  103. S. Higashi, N. Andoh, K. Kamisako and T. Sameshima, "Stress in Pulsed-Laser Crystallized Silicon Films", Jpn. J. Appl. Phys. 40(2001)731-735. PDFファイルダウンロード

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    2000年

  104. T. Sameshima, K. Ozaki and N. Andoh, "Large crystalline Grain Growth using Current-Induced Joule Heating", Applied Phys. A 71 (2000) 1-6.PDFファイルダウンロード
  105. T. Sameshima, "Electronic and Crystallographic Properties of Polycrystalline Silicon Films", Asian J. of Phys. 9 (2000)771-795 (invited).
  106. T. Sameshima and K. Ozaki, "Current-Induced Joule Heating Used to Crystallize Silicon Thin Films", Jpn. J. Appl. Phys. 39 (2000) L651-L654 PDFファイルダウンロード
  107. T. Kamiya, K. Nakahata T. Sameshima, T. Watanabe, T. Mohri and I. Shimizu, "Free Carrier Optical Absorption and Hall Effect Current Measurements Used for Evaluation of Carrier Transport Properties of Polycrystalline Silicon Films with (220) and (400) Crystalline Orientation Structures", J. Appl. Phys. 88 (2000)3310-3315.
  108. K. Asada, K. Sakamoto, T. Watanabe, T. Sameshima and S. Higashi, "Heat treatment with High-Pressure H2O Vapor of Pulsed Laser Crystallized Silicon Films", Jpn. J. Appl. Phys. 39 (2000) 3883-3887. PDFファイルダウンロード
  109. Y. Tsunoda, T. Sameshima and S. Higashi, "Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment", Jpn. J. Appl. Phys. 39 (2000) 1656-1659PDFファイルダウンロード
  110. K. Sakamoto and T. Sameshima, "Passivation of SiO2/Si interfaces using High-Pressure-H2O-Vapor Heating", Jpn. J. Appl. Phys. 39 (2000) 2492-2496. PDFファイルダウンロード

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    1999年

  111. S. Higashi, K. Ozaki, K. Sakamoto, Y. Kano and T. Sameshima, "Electrical Properties of Excimer Laser Crystallized Lightly Doped Polycrystalline Silicon Films", Jpn. J. Appl. Phys. 38(1999)L857-L860 PDFファイルダウンロード
  112. T. Sameshima, K. Sakamoto, K. Asada, "Defect Reduction and Surface Passivation of SiO2/Si by Heat Treatment with High-Pressure H2O Vapor", Applied Physics A 69(1999)221-224.PDFファイルダウンロード
  113. T. Sameshima, K. Saitoh, N. Aoyama, S. Higashi, M. Kondo and A. Matsuda, "Electrical Properties of Pulsed Laser Crystallized Silicon Films", Jpn. J. Appl. Phys. 38(1999)1892-1897. PDFファイルダウンロード

    114. PAGE TOP


    1998年

  114. T. Sameshima, K. Sakamoto, Y. Tsunoda and T. Saitoh, "Improvement of SiO2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H2O Vapor", Jpn. J. Appl. Phys. 37(1998)L1452-1454 PDFファイルダウンロード
  115. T. Sameshima, M. Satoh, K. Sakamoto, K. Ozaki and K. Saitoh, "Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H2O Vapor", Jpn. J.Appl. Phys.37 (1998)L1030-1032. PDFファイルダウンロード
  116. T. Sameshima, M. Satoh, K. Sakamoto, K. Ozaki and K. Saitoh, "Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H2O Vapor", Jpn. J. Appl. Phys. 37(1998)4254-4257. PDFファイルダウンロード
  117. T. Sameshima, K. Sakamoto and M. Satoh, "Heat Treatment in High Pressure H2O Vapor Used for Improvement of Si-O Bonding Network Near SiO2/Si Interface", Thin Solid Films 335 (1998)138-141.PDFファイルダウンロード
  118. T. Sameshima, M. Satoh, K. Sakamoto, A. Hisamatsu, K. Ozaki. and K. Saitoh, "Heat Treatment of Amorphous and Polycrystalline Silicon Thin Film with　H2O Vapor", Jpn. J. Appl. Phys. 37(1998) L112-L114. PDFファイルダウンロード
  119. T. Sameshima, "Status of Si Thin Film Transistors", J. of Non-Crystalline Solids 227-230(1998) 1196-1201. (invited)PDFファイルダウンロード

    120. PAGE TOP


    1997年

  120. T. Sameshima, K.Saitoh, M.Satoh, A.Tajima and N.Takashima, "Crystalline　Properties of Laser Crystallized Silicon Films", Jpn. J. Appl. Phys. 36 (1997) L1360-L1363. PDFファイルダウンロード
  121. T. Sameshima, T. Murakami, N.Takashima, A.Tajima and T.Mohri, " The Gas Combustion of H2 with N2O Used for Rapid Thermal Annealing", Jpn.J.Appl.Phys 37(1997) 6276-6279. PDFファイルダウンロード
  122. T. Sameshima and M.Satoh, "Improvement of SiO2 Properties by Heating Treatment in High Pressure H2O Vapor", Jpn. J. Appl. Phys. 36 (1997) L687-L689.PDFファイルダウンロード
  123. T. Sameshima, "Laser Processing for Thin Film Transistor Applications", Materials Science and Engineering B45 (1997) 186-193.

    124. PAGE TOP


    1996年

  124. T. Sameshima and N.Takashima, "Optical Characterization of Laser-Induced Crystallized Silicon Films", Appl. Phys.A63 (1996)333-336.
  125. T. Sameshima Y. Sunaga N. Takashima and A. Tajima," Rapid Thermal Annealing Using the Combustion of H2 with N2O ", Appl. Phys. Lett. 69 (1996)1205-1207.
  126. T. Sameshima, "Laser beam application to Thin Film Transistors", Appl. Surface Science 96-98 (1996) 352-358.PDFファイルダウンロード
  127. T. Sameshima, Y. Sunaga and A. Kohno, "Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self- Heating", Jpn. J. Appl. Phys. Lett, 35 (1996) 308-310. PDFファイルダウンロード

    128. PAGE TOP


    1995年

  128. N. Sano, M. Sekiya, M. Hara, A. Kohno and T. Sameshima, "Improvement of SiO2/Si interface by low temeprature annealing in wet atmosphere", Appl. Phys. Letters. 66(1995)2107-2109.
  129. N. Sano, M. Sekiya, M. Hara, A. Kohno and T. Sameshima, "High Quality SiO2/Si Interfaces of Poly-Crystalline Silicon Thin Film Transistors by Annealing in Wet Atmosphere", IEEE Electron Device Letters 16 (1995)157-159.
  130. A. Kohno, T. Sameshima, N. Sano, M. Sekiya and M. Hara, "High Performance Poly-Si TFTs Fabricated Using Pulsed Laser Annealing and Remote Plasma CVD with Low Temperature Processing", IEEE Trans Electron Device 42 (1995)251-257.

    131. PAGE TOP


    1979～1994年

  131. T. Sameshima, M. Sekiya, M. Hara, N. Sano and A. Kohno, "Reduction of defects in Laser-Induced Crystallized and Amorphized Silicon Films using Plasma Hydrogenation", J. Appl. Phys. 76 (1994) 7377-7383.
  132. N. Sano, K. Kohno, M. Hara, M. Sekiya and T. Sameshima, "A New Technique for Diagonistics of a Radio-Frequency Parallel-Plate Remote Plasma", Applied Phys. Lett. 65 (1994) 162-164.
  133. M. Sekiya, M. Hara , N. Sano, A. Kohno and T. Sameshima, "High Performance Poly-crystalline Silicon Thin Film Transistors Fabricated Using Remote Plasma Chemical Vapor Deposition of SiO2", IEEE Electron Device Letters, EDL-15 (1994) 69-71.
  134. T. Sameshima, A. Kohno, M. Sekiya, M. Hara and N. Sano, "Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors", Jpn. J. Appl. Phys.Lett. 33 (1994) 834-836.PDFファイルダウンロード
  135. T. Sameshima, A. Kohno, M. Sekiya, M.Hara and N. Sano, "SiO2 Formation by Thermal Evaporation of SiO in Oxygen Atmosphere Used to Fabrication of High Performance Polycrystalline Silicon Thin Film Transistors", Appl. Phys. Lett. 64 (1994) 1018-1020.
  136. T. Sameshima, "Fabrication of poly-Si TFTs Using Laser Annealing Technique", Electronics and Communications in Japan (Scripta Technica, Inc., A John Wiley & Sons 1994) 76 (1993) 80.
  137. T. Sameshima and S. Usui, "Pulsed Laser-Induced Melting Followed by Quenching of Silicon Films", J. Appl. Phys. 74 (1993) 6592-6598.
  138. T. Sameshima, "Self Organized Grain Growth Larger than 1μm through Pulsed-Laser-Induced Melting of Silicon Films", Jpn. J. Appl. Phys. Lett. 32 (1993) 1485-1488.PDFファイルダウンロード
  139. 鮫島俊之, "レーザアニール法を用いた薄膜トランジスタ作製技術", 電子情報通信学会論文誌C-II, J76-C-II (1993) 235-240. (invited)
  140. 鮫島俊之, "シリコン膜のレーザアモルファス化", 電気化学及び工業物理化学, 60 (1992)164.
  141. T. Sameshima and S.Usui, "Laser Beam Shaping System for Semiconductor Processing", Optics Communications 88 (1992) 59-62.
  142. T. Sameshima and S. Usui, "Mechanism of Pulsed Laser-Induced Amorphization of Silicon Films", Appl. Phys. Lett. 59 (1991) 2724-2726.
  143. T. Sameshima, M. Hara, N. Sano and S Usui, "Pulsed Laser-Induced Amorphization of Silicon Films",. J. Appl. Phys. 70 (1991) 1281-1289.
  144. T. Sameshima, M. Hara and S. Usui, "Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization", Jpn. J. Appl. Phys. Lett. 29 (1990) 1363-1365.PDFファイルダウンロード
  145. T. Sameshima, M. Hara and S. Usui, "Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film", Jpn. J. Appl. Phys. Lett. 29 (1990) 548-551.PDFファイルダウンロード
  146. S. Usui, T. Sameshima and M. Hara, "The Transformation of a-Si:H into Polycrystalline Silicon by Excimer Laser Irradiation and Its Application to TFTs", Optoelectronics 1 (1989) 235-241.
  147. H. Tomita, M. Negishi, T. Sameshima and S. Usui, "Submicrometer Poly-Si CMOS Fabrication with Low-Temperature Laser Doping", IEEE Electron Device Lett., EDL-10 (1989) 547-549.
  148. T. Sameshima, M. Hara and S. Usui, "Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-induced Crystallization of a-Si:H", Jpn. J. Appl. Phys. Lett. 28 (1989) 2131-2133.PDFファイルダウンロード
  149. T. Sameshima, M. Hara and S. Usui, "XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs", Jpn. J. Appl. Phys. 28 (1989) 1789-1793.PDFファイルダウンロード
  150. T. Sameshima, H.Tomita and S. Usui, "In Situ Observation of Pulsed Laser Doping", Jpn. J. Appl.Phys. Lett. 27 (1988) 1935-1937.PDFファイルダウンロード
  151. T. Sameshima and S. Usui, "Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser", Jpn. J. Appl. Phys. Lett. 27 (1987)1208-1210.PDFファイルダウンロード
  152. T. Sameshima, S. Usui and H. Tomita, "Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique", Jpn. J. Appl. Phys. Lett. 26 (1987) 1678-1680. PDFファイルダウンロード
  153. T. Sameshima, S. Usui and M. Sekiya, "Laser induced Melting of Predeposited Impurity Doping Technique used to Fabricate Shallow Junction", J. Appl. Phys. 62 (1987)711-713.
  154. T. Sameshima, S. Usui and M. Sekiya, "XeCl Excimer Laser Annealing Used in the Fabrication of Poly-Si TFTs", IEEE Electron Device Lett. EDL-7 (1986) 276-278.PDFファイルダウンロード
  155. K. Inoue, N. Asai and T. Sameshima,."Experimental Study of the Hyper- Raman Scattering Due to Raman Ineactive Lattice Vibration in SrTiO3", J. Phys.Soc. Jpn 50 (1981) 1291-1300.
  156. K. Inoue, N. Asai and T. Sameshima, "Observation of the Phonon Polariton in the Centrosymmetric Crystal of SrTiO3 by Hyper Raman Scattering", J. Phys.Soc.Jpn. Lett 48 (1980) 1787-1789.
  157. K. Inoue and T. Sameshima, "Observation of Hyper- Raman Scattering Spectra Due to Lattice Vibration in SrTiO3", J. Phys. Soc. Jpn. Lett. 47 (1979) 2037-2039. tanuki.

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