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Last Update: 2004.2.4


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  2. Nano-Lithography
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2003

S. Uno, K. Nakazato, S. Yamaguchi, A. Kojima, N. Koshida, and H. Mizuta:
"New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si"
IEEE Trans. Nanotechnology 3(4) (2004) (in press).
N. Koshida and N. Matsumoto:
"Fabrication and quantum properties of nanostructured silicon"
Materials Science and Engineering R 40(2003) 169-205.
. Gelloz, H. Sano, R. Boukherroub, D.D.M. Wayner, D.J. Lockwood, and N. Koshida:
"Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds"
Appl. Phys. Lett. 83(2003) 2342-2344.
N.Koshida, B.Gelloz, A. Kojima, T.Migita, Y. Nakajima, T.Kihara, T.Ichihara, Y.Watabe, and T.Komoda:
"Photon, Electron and Utlrasonic Emission from Nanocrystalline Porous Silicon Devices",
JMat. Res. Soc. Symp. Proc. 737(2003) 801-812.
B. Gelloz, A. Bsiesy, and R. Herino:
"Electrically induced luminescence quenching in p+-type and anodically oxidized n-type wet porous silicon"
J. Appl. Phys. 94, 2381-2389 (2003).
B. Gelloz and N. Koshida:
"Effects of Amorphous Carbon Films on the Performance of Porous Silicon Electroluminescence",
Mat. Res. Soc. Symp. Proc. 737(2003) 581-586.
T. Komoda, Y. Honda, T. Ichihara, T. Hatai, Y.Watabe,K.Aizawa,andN.Koshida:
"Demonstration of a possibility for a large panel BSD (Ballistic Electron Surface-Emitting Display) by fabricating 7.6 inches diagonal prototype model",
Society for Information Display 2002 Int. Symp., Digest of Technical Papers, 34(SID, San Jose, 2003). 910-913.
A. Kojima, and N. Koshida:
"An analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon",
Jpn. J. Appl. Phys. 42(2003) 2395-2398.
Y. Nakajima, H. Toyama, T. Uchida, A. Kojima, and N. Koshida:
"Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon device Formed on a p-Type Substrate",
Jpn. J. Appl. Phys. 42(2003) 2412-2414.
B. Gelloz, A. Halimaoui, Y. Campidelli, A. Bsiesy, N. Koshida, and R. Herino:
"Anodic oxidation of p+-type porous silicon having pores uniformly covered with Ge"
phys. stat. sol. (a) 197(2003) 123-127.
Y. Nakajima, H. Toyama, A. Kojima, and N. Koshida:
"A solid-state light-emitting device based on ballistic electron excitation using an inorganic material as a fluorescent film"
phys. stat. sol. (a) 197(2003) 316-320.
A. Kojima and N. Koshida:
"A Monte-Carlo simulation of ballistic transport in nanocrystalline silicon diode"
phys. stat. sol. (a) 197(2003) 452-457.
B. Gelloz and N. Koshida:
"Electroluminescence of nanocrystalline porous silicon devices"
Handbook of Luminescence, Display Materials, and Devices Vol. 3, Chap. 5, Ed. H.S. Nalwa and L.S. Rohwer (American Sci. Publ., 2003) 127-156.

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2002

Y. Osaka, K. Kohno, H. Mizuno, and N. Koshida:
"Physical properties of SiO2-doped Si films and electroluminescence in metal/SiO2-doped Si/p-Si diodes"
Jpn. J. Appl. Phys. 41(2002) 7481-7486.
Y. Nakajima, A. Kojima, and N. Koshida:
"Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device",
Appl. Phys. Letters 81,2472-2474(2002).
K. Yamada, K. Goto, Y. Nakajima, N. Koshida, and H. Shinoda:
"Wire-Free Tactile Sensing Element based on Optical Connection",
Proc. 19th Sensor Symposium (2002) (in press).
K. Yamada, K. Goto, Y. Nakajima, N. Koshida, and H. Shinoda:
"A Sensor Skin using Wire-Free Tactile Sensing Elements based on Optical Connection",
Proc. 19th Sensor Symposium (2002) 319-322.
T. Komoda, Y. Honda, T. Ichihara, T. Hatai, Y. Takegawa, Y. Watabe, and K. Aizawa:
"Development of a Low Temperature Process of Ballistic Electron Surface-Emitting Display (BSD) on a Glass Substrate",
Society for Information Display 2002 Int. Symp. Digest of Technical Papers, 33, No.2, (SID, San Jose, 2002) 1128-1131
N. Asamura, U. K. Saman Keerthi, T. Migita, N. Koshida, and H. Shinoda:
"Intensifying Thermally Induced Ultrasound Emission",
Proc. 19th Sensor Symposium (IEEJ, Tokyo, 2002) in press
T. Ichihara, Y. Honda, K. Aizawa T. Komoda and N. Koshida:
"Development of ballistic electron cold cathode by a low temperature processing of polycrystalline silicon films",
J. Crystal Growth Special Issue (2002) in press.
Y. Nakajima, A. Kojima, and N. Koshida:
"A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films",
Jpn. J. Appl. Phys. 41 (2002) 2707-2709.
T. Migita and N. Koshida:
"Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon",
Jpn. J. Appl. Phys. 41 (2002) 2588-2590.
N. Koshida:
"Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited)",
Mater. Sci. & Eng. C724 (2002) 285-289 .

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2001

X. Sheng, A. Kojima, T. Komoda, and N. Koshida:
"Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure",
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER STRUCTURE 19; PART 1 (2001) 64-67 .
A. Kojima and N. Koshida:
"Evidence of enlarged drift length in nanocrystalline porous silicon layers by time-of-flight measurements",
Jpn. J. Appl. Phys. 40 (2001) 366-368 .
N. Koshida, J. Kadokura, M. Takahashi, and K. Imai:
"Stabilization of Porous Silicon Electroluminescence by Surface Capping with Silicon Dioxide Films",
Mat. Res. Soc. Proc. 638 (2001) F18.3.1.
Y. Toriumi, M. Takahashi, and N. Koshida:
"A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection",
Mat. Res. Soc. Proc. 638 (2001) F8.3.1.
Y. Nakajima, A. Kojima, and N. Koshida:
"A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation",
Mat. Res. Soc. Proc. 638 (2001) F4.2.1.
A. Kojima, X. Sheng, and N. Koshida:
"Analyses of Ballistic Electron Transport in Nanocrystalline Porous Silicon",
Mat. Res. Soc. Proc. 638 (2001) F3.3.1.
T. Komoda, T. Ichihara, Y. Honda, K. Aizawa, and N. Koshida:
"Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrare",
Mat. Res. Soc. Proc. 638 (2001) F4.1.1.
T. Komoda, Y. Honda, T. Hatai, Y. Watabe, T. Ichihara, K.Aizawa, and N. Koshida:
"Fabrication of Ballistic Electron Surface-Emitting Display on Glass Substrates (Invited)",
Society of Information Display, Digest of Technical Papers 32 (2001) 14-1.

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2000

M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto and N. Koshida:
"Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators.",
Appl. Phys. Lett. 76 (2000) 1990-1992.
B. Gelloz and N. Koshida:
"Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode.",
J. Appl. Phys. 88(7) (2000) 4391-4324.
B. Gelloz , A. Bsiesy and N. Koshida:
"Conduction and Luminescent Properties of Wet Porous Silicon",
J. Porous Materials 7 (2000) 103-106.
A. Kumagai , Y. Kanegawa , Y. Suda and N. Koshida:
"Improvement of Porous Si Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source",
J. Porous Materials 7 (2000) 73-76.
T. Komoda, Y. Honda, T. Hatai, Y. Watabe, T. Ichihara, K. Aizawa, Y. Kondo and N. Koshida :
"Matrix flat-panel application of ballistic electron surface-emitting display",
Society for Information Display, Digest of Technical Papers 31 (2000) 428-431.
K. Ueno and N. Koshida:
"Optical Accessibility of Light-Emissive Nanosilicon Memory",
phys. stat. sol. (a) 182 (2000) 579-583.
M. Takahashi, Y. Toriumi, and N. Koshida:
"Current-Induced Optical Effect in Porous Silicon Fabry-Perot Resonators",
phys. stat. sol. (a) 182 (2000) 567-571.

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1999

K. Ueno and N. Koshida:
"Light-emissive nonvolatile memory effects in porous silicon diodes",
Appl. Phys. Lett. 74 (1999) 93-95.
N. Koshida , X. Sheng and T. Komoda:
"Quasiballistic Electron Emission from Porous Silicon Diodes",
Appl. Surf. Sci. 146 (1999) 371-376.
N. Koshida and B. Gelloz:
Wet and Dry Porous Silicon,
Currnet Opinion in Colloid and Interface Science, ed. L. Brus (Elsevier Science, Oxford, 1999) p.p. 309-313.
M. Takahashi and N. Koshida:
"Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides.",
J. Appl. Phys. 86(9) (1999) 5274-5278.
T. Komoda , X. Sheng , N. Koshida:
"Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films.",
J. Vac. Sci. Technol. B 17(3) (1999) 1076-1079.
N. Koshida, K. Ueno and X. Sheng:
"Field-induced functions of porous Si as a confined system.",
Journal of Luminescence 80 (1999) 37-42.
H. Mizuno , N. Koshida:
"Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation.",
Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 179-184.
N. Koshida , T. Nakajima, M. Yoshiyama , K. Ueno , T. Nakagawa and H. Shinoda:
"Ultrasound Emission from Porous Silicon: Efficient Thermo-acoustic Function as a Depleted Nanocrystalline System",
Mat. Res. Soc. Symp. Proc. 536 (1999) p.p. 105-110.
B. Gelloz , T. Nakagawa and N. Koshida:
"Enhancing the External Quantum Efficiency of Porous Silicon Leds Beyond 1% by a Post Anodization Electrochemical Oxidation",
Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 15-20.
H. Shinoda , T. Nakajima , K. Ueno & N. Koshida:
"Thermally induced ultrasonic emission from porous silicon.",
Nature 400 (1999) 853-855.
M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto and N. Koshida:
"Nonlinear refractive index change in porous silicon Fabry-Perot resonators.",
Proc. Int. ECS Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999.10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 35-42.
B. Gelloz and N. Koshida:
"Enhancing Efficiency and Stability of Electroluminescence of Porous Silicon Using Electrochemical Techniques",
Proc. Int. Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999. 10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 27-34.
N. Koshida , B. Gelloz , X. Sheng , K. Ueno and A. Kojima:
"Luminescence and Related Novel Functions of Quantum-sized Nanosilicon. (in Japanese)",
Technical Report of IEICE LQE99-16 (1999) 1-6.

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1998

S. Tanaka, H. Koyama and N. Koshida:
"Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration",
Appl. Phys. Lett. 73 (1998) 2334-2336.
B. Gelloz, T. Nakagawa and N. Koshida:
"Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation.",
Appl. Phys. Lett. 73 (1998) 2021-2023.
H. Koyama , Y. Matsushita and N. Koshida:
"Activation of blue emission from oxidized porous silicon by annealing in water vapor.",
J. Appl. Phys. 82 (1998) .
M. Hashimoto, T. Koreeda and N. Koshida:
"Application of dual-functional MoO3/WO3 bilayer resists to focused ion beam nanolithography",
J. Vac. Sci. & Technol. B 16(5) (1998) 2767-2771.
X. Sheng , H. Koyama and N. Koshida:
"Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes.",
J. Vac. Sci. & Technol. B 16 (1998) 793-795.
M. Takahashi, M. Araki and N. Koshida:
"Buried Optical Waveguide of Porous Silicon",
Jpn. J. Appl. Phys 37 (1998) L1017-L1019.
T. Nakagawa, H. Sugiyama and N. Koshida:
"Fabrication of Periodic Si Nanostructure by Controlled Anodization",
Jpn. J. Appl. Phys. 37(Part 1, No. 12B) (1998) 7186-7189.
K. Ueno and N. Koshida:
"Negative-Resistance Effects in Electroluminescent Porous Silicon Diodes.",
Jpn. J. Appl. Phys. 37 (1998) 1096-1099.
X. Sheng and N. Koshida:
"Quasi-ballistic Stable Electron Emission from Porous Silicon Cold Cathodes",
Mat. Res. Soc. Symp. Proc. 509 (1998) p.p. 193-198.
N. Koshida , E. Takizawa , H. Mizuno , H. Koyama and T. Sameshima:
"Electroluminescent Devices on Polycrystalline Silicon Films for Large-Area Applications",
Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 151-156.
M. Araki , M. Takahashi , H. Koyama and N. Koshida:
"Performances of Porous Silicon Optical Waveguides.",
Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 107-112.
T. Matsumoto , Y. Masumoto and N. Koshida:
"Photo- and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes",
Mat. Res. Soc. Symp. Proc. 486 (1998) p. .
Y. Suda , K. Obata and N. Koshida:
"Observation of Band Dispersions in Photoluminescent Porous Silicon",
Phys. Rev. Lett. 80 (1998) .

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1997

T. Matsumoto , Y. Masumoto , S. Nakashima , H. Mimura and N. Koshida:
"Coupling effect of surface vibration and quantum confinement carriers in porous silicon.",
Appl. Surf. Sci. 113/114 (1997) L1089-L1091.
T. Oguro , H. Koyama , T. Ozaki and N. Koshida:
"Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices.",
J. Appl. Phys. 81 (1997) 1407-1412.
X. Sheng , T. Ozaki , H. Koyama and N. Koshida:
"Improved cold electron emission characteristics of electroluminescent porous silicon diodes.",
J. Vac. Sci. & Technol. B 15 (1997) 1661-1665.
T. Matsumoto , Y. Masumoto , T. Nakagawa , M. Hashimoto , K. Ueno and N. Koshida:
"Electroluminescence from deuterium-terminated porous silicon.",
Jpn. J. Appl. Phys. 36 (1997) L1089-L109.
K. Ueno , H. Koyama and N. Koshida:
"Nonlinear electrical functions of porous silicon light-emitting diodes.",
Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 699-704.
Y. Suda , K. Obata , A. Kumagai and N. Koshida:
"Roles of surface termination in photoluminescence mechanisms of porous silicon.",
Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 455-460.
T. Matsumoto , Y. Masumoto and N. Koshida:
"Optical properties of deuterium terminated porous silicon.",
Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 449-454.
T. Nakagawa, H. Koyama and N. Koshida:
"Effects of External Magnetic Field on the Formation and Optical Properties of Luminescent Porous Silicon.",
Proc. ECS Int. Symp. on Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, Montreal, Canada 1997 (ECS, Pennington, 1997) p.p. 253-241.
H. Koyama and N. Koshida:
"Spectroscopic analysis of blue-green emission from oxidized porous silicon : possible evidence for Si-nanostructure-based mechanism.",
Solid State Comm. 103 (1997) 37-41.
M. Araki , H. Koyama and N . Koshida:
"Functional properties of luminescent porous silicon as a component of optoelectronic integration.",
Superlattices and Microstructures 22 (1997) 365-370.
X. Sheng , H. Koyama and N. Koshida:
"Emission characteristics of porous silicon cold cathodes.",
Thin Solid Films 297 (1997) 314-316.
H. Mizuno , H. Koyama and N. Koshida:
"Photo-assisted continuous tuning of photoluminescence spectra of porous silicon from red to blue.",
Thin Solid Films 297 (1997) 61-63.
T. Matsumoto , A. Masumoto , S. Nakajima and N. Koshida:
"Luminescence from deuterium-terminated porous silicon.",
Thin Solid Films 297 (1997) 31-34.

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1996

H. Mizuno , H. Koyama and N. Koshida:
"Oxide-free blue photoluminescence from photochemically etched porous silicon.",
Appl. Phys. Lett. 69 (1996) 3779-3781.
T. Nakagawa , H. Koyama and N. Koshida:
"Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization.",
Appl. Phys. Lett. 69 (1996) 3206-3208.
M. Araki , H. Koyama and N. Koshida:
"Fabrication and fundamental properties of an edge-emitting device with step-index porous silicon waveguide.",
Appl. Phys. Lett. 68(21) (1996) 2999-3000.
M. Araki , H. Koyama and N. Koshida:
"Controlled electroluminescence of porous silicon diodes with a vertical optical cavity.",
Appl. Phys. Lett. 52 (1996) 2956-2958.
M. Araki , H. Koyama and N. Koshida:
"Precisely tuned emission from porous silicon vertical optical cavity in the visible region.",
J. Appl. Phys. 80 (1996) 4841-4844.
Y. Suda , T. Koizumi , K. Obata , Y. Tezuka , S. Shin and N. Koshida:
"Electronic surface structures and photoluminescence mechanisms of porous Si.",
J. Electrochem. Soc. 143 (1996) 2502-2507.
M. Araki , H. Koyama and N. Koshida:
"Optical Cavity Based on Porous Silicon Superlattice Technology.",
Jpn. J. Appl. Phys. 35(2) (1996) 1041-1044.
M. Hashimoto , S. Watanuki and N. Koshida M. Komuro and N. Atoda:
"Dual function of thin MoO3 and WO3 films as negative and positive resists for focused ion beam lithography.",
Jpn. J. Appl. Phys. 35 (1996) 3665-3669.
H. Koizumi , Y. Suda and N. Koshida:
"Effects of oxidation on electronic states and photoluminescence properties of porous silicon.",
Jpn. J. Appl. Phys. 35 (1996) L803-L806.
H. Koyama , N. Shima and N . Koshida:
"Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon.",
Phys. Rev. B 53(20) (1996) R13291-R13294.
H. Tanino , A. Kuprin , Y. Deai and N. Koshida:
"Raman study of free-standing porous silicon.",
Phys. Rev. B 52 (1996) 1937-1947.

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1995

T. Matsumoto , M. Daimon , H. Mimura , Y. Kanemitsu and N. Koshida:
"Optically induced absorption in porous silicon and its application to logic gates.",
J. Electrochem Soc. 142 (1995) 3528-3533.
T. Ozaki , T. Oguro , H. Koyama and N. Koshida:
"The Relationship between Photoconduction Effects and Luminescent Properties of Porous Silicon.",
Jpn. J. Appl. Phys. 34 (1995) 947-950.
N. Koshida , H. Mizuno , H. Koyama and G. J. Collins:
"Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts.",
Jpn. J. Appl. Phys. 34(Suppl. 34-1) (1995) 92-94.
N. Koshida , T. Ozaki and H. Koyama:
"Cold electron emission from electroluminescent porous silicon diodes.",
Jpn. J. Appl. Phys. 34 (1995) L705-L707.
N. Koshida , H. Koyama et al.:
"Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism.",
Mat. Res. Soc. Symp. Proc. 358 (1995) 695-700.
H. Koyama and N. Koshida:
"Polarization retention of photoluminescence from porous silicon.",
Phys. Rev. B 52 (1995) 2649-2655.
H. Koyama , T. Ozaki , and N. Koshida:
"Decay dynamics of the homogeneously-broadened photoluminescence from porous silicon.",
Phys. Rev. B 52 (1995) R11561-R11564.
N. Koshida:
Interrelations between Electrical Properties and Visible Luminescence of Porous Silicon.,
Porous Silicon Science and Technology, ed. J.C. Vial (Les Ed. de Phys., Marseille, 1995) p.p. 324-328.
M. Araki , H. Koyama and N. Koshida:
"Precisely tuned optical cavity using porous silicon superlattice structures.",
Proc Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 139-145.
X. Sheng , T. Ozaki , H. Koyama and N. Koshida:
"Properties of porous silicon LED as a surface-emitting cold cathode.",
Proc. Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 87-93.

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1994

H. Koyama , T. Oguro and N. Koshida:
"Post-anodization filtered illumination of porous silicon in HF solutions to improve the luminescence characteristics.",
Appl. Phys. Lett. 65 (1994) 1656-1658.
T. Ozaki , M. Araki , S. Yoshimura , H. Koyama and N. Koshida:
"Photoelectronic properties of porous Si.",
J. Appl. Phys. 76 (1994) 1986-1988.
T. Ikeda , M. Baba and N. Koshida:
"Transition metal oxide resists for electron-beam and focused-ion-beam lithography.",
J. Photopolym. Sci. & Technol. 7(3) (1994) 585-594.
T. Ban , Y. Suda , T. Koizumi , H. Koyama , Y. Tezuka , S. Shin and N. Koshida:
"Effects of anodization current density on luminescence properties of porous silicon.",
Jpn. J. Appl. Phys. 33 (1994) 5603-5607.
L. T. Canham and N. Koshida:
Silicon-Based Materials for Light Emission.,
Semiconductor Si/1994, ed. H. Huff, W. Bergholz and K. Sumino (Electrochem. Soc., Pennington, 1994) p.p. 457-459.

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1993

N. Koshida, H. Koyama, Y. Suda et al.:
"Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses.",
Appl. Phys. Lett. 63(20) (1993) 2774-2776.
N. Koshida , H. Koyama , Y. Yamamoto and G. Collins:
"Visible electroluminescence from porous silicon diodes with an electropolymerized contact.",
Appl. Phys. Lett. 63(19) (1993) 2655-2657.
Y. Uchida , N. Koshida and H. Koyama:
"Paramagnetic center in porous silicon : A dangling bond with C3V symmetry.",
Appl. Phys. Lett. 63(7) (1993) 961-963.
T. Ueno , Y. Akiba , T. Shinohara , H. Koyama , N. Koshida and Y. Tarui:
"Radiative transition with visible light in electrochemically anodized polycrystalline silicon.",
Jpn. J. Appl. Phys. 32 (1993) L5-L7.
N. Koshida and H. Koyama:
"Optoelecronic characterizations of porous silicon (invited).",
MRS Symp. Proc. 283 (1993) p.p. 337-342.
N. Koshida:
Optoelectronic Properties of Porous Silicon.,
Optical Properties of Low Dimensional Silicon Structures, ed. D. Bensahel (Kluwer Acad., Dordrecht, 1993) p.p. 133-138.

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1992

N. Koshida and H. Koyama:
"Visible electroluminescence from porous silicon.",
Appl. Phys. Lett. 60(3) (1992) 347-349.
M. Nagasu and N. Koshida:
"Photointercalation characteristics of thin WO3 films.",
J. Appl. Phys. 71 (1992) 398-402.
N. Koshida , S. Watanuki , K. Yoshida et al.:
"Electrical properties of nanometer-width refractory metal line fabricated by focused ion beam and oxide resists.",
Jpn. J. Appl. Phys. 31 (1992) 4483-4486.
N. Koshida and H. Koyama:
"Visible electro- and photoluminescence from porous silicon and its related optoelectronic properties.",
MRS Symposium Proc. 256 (1992) p.p. 219-222.
N. Koshida and H. Koyama:
"Visible photo- and electroluminescent properties of porous silicon.",
Nanotechnology 3 (1992) 192-195.
N. Koshida , Y. Kiuchi and S. Yoshimura:
"Photoconduction effects of porous Si in the visible region.",
Proc. 10th Symp. Photoelectron. Image Devices, London 1991 (IOP Pub., Bristol, 1992) p.p. 377-384.

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1991

N. Koshida and N. Hirayama:
"Ion implantation induced change in fibrillar morphology of polyacetylene films.",
Nucl. Instrum. Meth. B 59/60 (1991) 1292-1294.
N. Koshida and H. Yabumoto:
"Effects of ion implantation on the photoelectrochemical properties of TiO2.",
Nucl. Instrum. Meth. B 59/60 (1991) 1236-1239.

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1990

N. Koshida, H. Wachi, K. Yoshida, M. Komuro and N. Atoda:
"Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists",
Jpn. J. Appl. Phys. 29(10) (1990) 2299-2302.

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2.:
A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films (41) () .
1.:
Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited) (Mater. Sci. & Eng. ) () .
3.:
Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon (41) () .

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