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T. Ichihara, Y. Honda, K. Aizawa T. Komoda and N. Koshida: "Development of ballistic electron cold cathode by a low temperature processing of polycrystalline silicon films", J. Crystal Growth Special Issue in press (2002) in press. |
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Y. Nakajima, A. Kojima, and N. Koshida: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films", Jpn. J. Appl. Phys. 41 (2002) 2707-2709. |
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T. Migita and N. Koshida: "Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon", Jpn. J. Appl. Phys. 41 (2002) 2588-2590. |
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X. Sheng, A. Kojima, T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER STRUCTURE 19; PART 1 (2001) 64-67 . |
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A. Kojima and N. Koshida: "Evidence of enlarged drift length in nanocrystalline porous silicon layers by time-of-flight measurements", Jpn. J. Appl. Phys. 40 (2001) 366-368 . |
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N. Koshida, J. Kadokura, M. Takahashi, and K. Imai: "Stabilization of Porous Silicon Electroluminescence by Surface Capping with Silicon Dioxide Films", Mat. Res. Soc. Proc. 638 (2001) F18.3.1. |
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Y. Toriumi, M. Takahashi, and N. Koshida: "A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection", Mat. Res. Soc. Proc. 638 (2001) F8.3.1. |
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Y. Nakajima, A. Kojima, and N. Koshida: "A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation", Mat. Res. Soc. Proc. 638 (2001) F4.2.1. |
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A. Kojima, X. Sheng, and N. Koshida: "Analyses of Ballistic Electron Transport in Nanocrystalline Porous Silicon", Mat. Res. Soc. Proc. 638 (2001) F3.3.1 |
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T. Komoda, T. Ichihara, Y. Honda, K. Aizawa, and N. Koshida: "Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrare", Mat. Res. Soc. Proc. 638 (2001) F4.1.1. |
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T. Komoda, Y. Honda, T. Hatai, Y. Watabe, T. Ichihara, K.Aizawa, and N. Koshida: "Fabrication of Ballistic Electron Surface-Emitting Display on Glass Substrates (Invited)", Society of Information Display, Digest of Technical Papers 32 (2001) 14-1. |
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M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators.", Appl. Phys. Lett. 76 (2000) 1990-1992. |
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B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode.", J. Appl. Phys. 88(7) (2000) 4391-4324. |
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B. Gelloz , A. Bsiesy and N. Koshida: "Conduction and Luminescent Properties of Wet Porous Silicon", J. Porous Materials 7 (2000) 103-106. |
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A. Kumagai , Y. Kanegawa , Y. Suda and N. Koshida: "Improvement of Porous Si Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source", J. Porous Materials 7 (2000) 73-76. |
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T. Komoda, Y. Honda, T. Hatai, Y. Watabe, T. Ichihara, K. Aizawa, Y. Kondo and N. Koshida : "Matrix flat-panel application of ballistic electron surface-emitting display", Society for Information Display, Digest of Technical Papers 31 (2000) 428-431. |
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K. Ueno and N. Koshida: "Optical Accessibility of Light-Emissive Nanosilicon Memory", phys. stat. sol. (a) 182 (2000) 579-583. |
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M. Takahashi, Y. Toriumi, and N. Koshida: "Current-Induced Optical Effect in Porous Silicon Fabry-Perot Resonators", phys. stat. sol. (a) 182 (2000) 567-571. |
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K. Ueno and N. Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes", Appl. Phys. Lett. 74 (1999) 93-95. |
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N. Koshida , X. Sheng and T. Komoda: "Quasiballistic Electron Emission from Porous Silicon Diodes", Appl. Surf. Sci. 146 (1999) 371-376. |
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N. Koshida and B. Gelloz: Wet and Dry Porous Silicon, Currnet Opinion in Colloid and Interface Science, ed. L. Brus (Elsevier Science, Oxford, 1999) p.p. 309-313. |
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M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides.", J. Appl. Phys. 86(9) (1999) 5274-5278. |
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T. Komoda , X. Sheng , N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films.", J. Vac. Sci. Technol. B 17(3) (1999) 1076-1079. |
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N. Koshida, K. Ueno and X. Sheng: "Field-induced functions of porous Si as a confined system.", Journal of Luminescence 80 (1999) 37-42. |
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H. Mizuno , N. Koshida: "Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation.", Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 179-184. |
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N. Koshida , T. Nakajima, M. Yoshiyama , K. Ueno , T. Nakagawa and H. Shinoda: "Ultrasound Emission from Porous Silicon: Efficient Thermo-acoustic Function as a Depleted Nanocrystalline System", Mat. Res. Soc. Symp. Proc. 536 (1999) p.p. 105-110. |
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B. Gelloz , T. Nakagawa and N. Koshida: "Enhancing the External Quantum Efficiency of Porous Silicon Leds Beyond 1% by a Post Anodization Electrochemical Oxidation", Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 15-20. |
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H. Shinoda , T. Nakajima , K. Ueno & N. Koshida: "Thermally induced ultrasonic emission from porous silicon.", Nature 400 (1999) 853-855. |
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M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto and N. Koshida: "Nonlinear refractive index change in porous silicon Fabry-Perot resonators.", Proc. Int. ECS Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999.10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 35-42. |
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B. Gelloz and N. Koshida: "Enhancing Efficiency and Stability of Electroluminescence of Porous Silicon Using Electrochemical Techniques", Proc. Int. Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999. 10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 27-34. |
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N. Koshida , B. Gelloz , X. Sheng , K. Ueno and A. Kojima: "Luminescence and Related Novel Functions of Quantum-sized Nanosilicon. (in Japanese)", Technical Report of IEICE LQE99-16 (1999) 1-6. |
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S. Tanaka, H. Koyama and N. Koshida: "Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration", Appl. Phys. Lett. 73 (1998) 2334-2336. |
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B. Gelloz, T. Nakagawa and N. Koshida: "Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation.", Appl. Phys. Lett. 73 (1998) 2021-2023. |
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H. Koyama , Y. Matsushita and N. Koshida: "Activation of blue emission from oxidized porous silicon by annealing in water vapor.", J. Appl. Phys. 82 (1998) . |
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X. Sheng , H. Koyama and N. Koshida: "Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes.", J. Vac. Sci. & Technol. B 16 (1998) 793-795. |
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M. Takahashi, M. Araki and N. Koshida: "Buried Optical Waveguide of Porous Silicon", Jpn. J. Appl. Phys 37 (1998) L1017-L1019. |
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T. Nakagawa, H. Sugiyama and N. Koshida: "Fabrication of Periodic Si Nanostructure by Controlled Anodization", Jpn. J. Appl. Phys. 37(Part 1, No. 12B) (1998) 7186-7189. |
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K. Ueno and N. Koshida: "Negative-Resistance Effects in Electroluminescent Porous Silicon Diodes.", Jpn. J. Appl. Phys. 37 (1998) 1096-1099. |
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X. Sheng and N. Koshida: "Quasi-ballistic Stable Electron Emission from Porous Silicon Cold Cathodes", Mat. Res. Soc. Symp. Proc. 509 (1998) p.p. 193-198. |
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N. Koshida , E. Takizawa , H. Mizuno , H. Koyama and T. Sameshima: "Electroluminescent Devices on Polycrystalline Silicon Films for Large-Area Applications", Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 151-156. |
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M. Araki , M. Takahashi , H. Koyama and N. Koshida: "Performances of Porous Silicon Optical Waveguides.", Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 107-112. |
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T. Matsumoto , Y. Masumoto and N. Koshida: "Photo- and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes", Mat. Res. Soc. Symp. Proc. 486 (1998) p. . |
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Y. Suda , K. Obata and N. Koshida: "Observation of Band Dispersions in Photoluminescent Porous Silicon", Phys. Rev. Lett. 80 (1998) . |
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T. Matsumoto , Y. Masumoto , S. Nakashima , H. Mimura and N. Koshida: "Coupling effect of surface vibration and quantum confinement carriers in porous silicon.", Appl. Surf. Sci. 113/114 (1997) L1089-L1091. |
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T. Oguro , H. Koyama , T. Ozaki and N. Koshida: "Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices.", J. Appl. Phys. 81 (1997) 1407-1412. |
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X. Sheng , T. Ozaki , H. Koyama and N. Koshida: "Improved cold electron emission characteristics of electroluminescent porous silicon diodes.", J. Vac. Sci. & Technol. B 15 (1997) 1661-1665. |
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T. Matsumoto , Y. Masumoto , T. Nakagawa , M. Hashimoto , K. Ueno and N. Koshida: "Electroluminescence from deuterium-terminated porous silicon.", Jpn. J. Appl. Phys. 36 (1997) L1089-L109. |
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K. Ueno , H. Koyama and N. Koshida: "Nonlinear electrical functions of porous silicon light-emitting diodes.", Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 699-704. |
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Y. Suda , K. Obata , A. Kumagai and N. Koshida: "Roles of surface termination in photoluminescence mechanisms of porous silicon.", Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 455-460. |
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T. Matsumoto , Y. Masumoto and N. Koshida: "Optical properties of deuterium terminated porous silicon.", Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 449-454. |
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T. Nakagawa, H. Koyama and N. Koshida: "Effects of External Magnetic Field on the Formation and Optical Properties of Luminescent Porous Silicon.", Proc. ECS Int. Symp. on Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, Montreal, Canada 1997 (ECS, Pennington, 1997) p.p. 253-241. |
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H. Koyama and N. Koshida: "Spectroscopic analysis of blue-green emission from oxidized porous silicon : possible evidence for Si-nanostructure-based mechanism.", Solid State Comm. 103 (1997) 37-41. |
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M. Araki , H. Koyama and N . Koshida: "Functional properties of luminescent porous silicon as a component of optoelectronic integration.", Superlattices and Microstructures 22 (1997) 365-370. |
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X. Sheng , H. Koyama and N. Koshida: "Emission characteristics of porous silicon cold cathodes.", Thin Solid Films 297 (1997) 314-316. |
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H. Mizuno , H. Koyama and N. Koshida: "Photo-assisted continuous tuning of photoluminescence spectra of porous silicon from red to blue.", Thin Solid Films 297 (1997) 61-63. |
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T. Matsumoto , A. Masumoto , S. Nakajima and N. Koshida: "Luminescence from deuterium-terminated porous silicon.", Thin Solid Films 297 (1997) 31-34. |
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H. Mizuno , H. Koyama and N. Koshida: "Oxide-free blue photoluminescence from photochemically etched porous silicon.", Appl. Phys. Lett. 69 (1996) 3779-3781. |
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T. Nakagawa , H. Koyama and N. Koshida: "Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization.", Appl. Phys. Lett. 69 (1996) 3206-3208. |
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M. Araki , H. Koyama and N. Koshida: "Fabrication and fundamental properties of an edge-emitting device with step-index porous silicon waveguide.", Appl. Phys. Lett. 68(21) (1996) 2999-3000. |
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M. Araki , H. Koyama and N. Koshida: "Controlled electroluminescence of porous silicon diodes with a vertical optical cavity.", Appl. Phys. Lett. 52 (1996) 2956-2958. |
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M. Araki , H. Koyama and N. Koshida: "Precisely tuned emission from porous silicon vertical optical cavity in the visible region.", J. Appl. Phys. 80 (1996) 4841-4844. |
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Y. Suda , T. Koizumi , K. Obata , Y. Tezuka , S. Shin and N. Koshida: "Electronic surface structures and photoluminescence mechanisms of porous Si.", J. Electrochem. Soc. 143 (1996) 2502-2507. |
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M. Araki , H. Koyama and N. Koshida: "Optical Cavity Based on Porous Silicon Superlattice Technology.", Jpn. J. Appl. Phys. 35(2) (1996) 1041-1044. |
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H. Koizumi , Y. Suda and N. Koshida: "Effects of oxidation on electronic states and photoluminescence properties of porous silicon.", Jpn. J. Appl. Phys. 35 (1996) L803-L806. |
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H. Koyama , N. Shima and N . Koshida: "Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon.", Phys. Rev. B 53(20) (1996) R13291-R13294. |
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H. Tanino , A. Kuprin , Y. Deai and N. Koshida: "Raman study of free-standing porous silicon.", Phys. Rev. B 52 (1996) 1937-1947. |
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T. Matsumoto , M. Daimon , H. Mimura , Y. Kanemitsu and N. Koshida: "Optically induced absorption in porous silicon and its application to logic gates.", J. Electrochem Soc. 142 (1995) 3528-3533. |
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T. Ozaki , T. Oguro , H. Koyama and N. Koshida: "The Relationship between Photoconduction Effects and Luminescent Properties of Porous Silicon.", Jpn. J. Appl. Phys. 34 (1995) 947-950. |
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N. Koshida , H. Mizuno , H. Koyama and G. J. Collins: "Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts.", Jpn. J. Appl. Phys. 34(Suppl. 34-1) (1995) 92-94. |
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N. Koshida , T. Ozaki and H. Koyama: "Cold electron emission from electroluminescent porous silicon diodes.", Jpn. J. Appl. Phys. 34 (1995) L705-L707. |
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N. Koshida , H. Koyama et al.: "Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism.", Mat. Res. Soc. Symp. Proc. 358 (1995) 695-700. |
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H. Koyama and N. Koshida: "Polarization retention of photoluminescence from porous silicon.", Phys. Rev. B 52 (1995) 2649-2655. |
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H. Koyama , T. Ozaki , and N. Koshida: "Decay dynamics of the homogeneously-broadened photoluminescence from porous silicon.", Phys. Rev. B 52 (1995) R11561-R11564. |
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N. Koshida: Interrelations between Electrical Properties and Visible Luminescence of Porous Silicon., Porous Silicon Science and Technology, ed. J.C. Vial (Les Ed. de Phys., Marseille, 1995) p.p. 324-328. |
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M. Araki , H. Koyama and N. Koshida: "Precisely tuned optical cavity using porous silicon superlattice structures.", Proc Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 139-145. |
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X. Sheng , T. Ozaki , H. Koyama and N. Koshida: "Properties of porous silicon LED as a surface-emitting cold cathode.", Proc. Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 87-93. |
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H. Koyama , T. Oguro and N. Koshida: "Post-anodization filtered illumination of porous silicon in HF solutions to improve the luminescence characteristics.", Appl. Phys. Lett. 65 (1994) 1656-1658. |
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T. Ozaki , M. Araki , S. Yoshimura , H. Koyama and N. Koshida: "Photoelectronic properties of porous Si.", J. Appl. Phys. 76 (1994) 1986-1988. |
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T. Ban , Y. Suda , T. Koizumi , H. Koyama , Y. Tezuka , S. Shin and N. Koshida: "Effects of anodization current density on luminescence properties of porous silicon.", Jpn. J. Appl. Phys. 33 (1994) 5603-5607. |
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L. T. Canham and N. Koshida: Silicon-Based Materials for Light Emission., Semiconductor Si/1994, ed. H. Huff, W. Bergholz and K. Sumino (Electrochem. Soc., Pennington, 1994) p.p. 457-459. |
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N. Koshida, H. Koyama, Y. Suda et al.: "Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses.", Appl. Phys. Lett. 63(20) (1993) 2774-2776. |
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N. Koshida , H. Koyama , Y. Yamamoto and G. Collins: "Visible electroluminescence from porous silicon diodes with an electropolymerized contact.", Appl. Phys. Lett. 63(19) (1993) 2655-2657. |
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Y. Uchida , N. Koshida and H. Koyama: "Paramagnetic center in porous silicon : A dangling bond with C3V symmetry.", Appl. Phys. Lett. 63(7) (1993) 961-963. |
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T. Ueno , Y. Akiba , T. Shinohara , H. Koyama , N. Koshida and Y. Tarui: "Radiative transition with visible light in electrochemically anodized polycrystalline silicon.", Jpn. J. Appl. Phys. 32 (1993) L5-L7. |
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N. Koshida and H. Koyama: "Optoelecronic characterizations of porous silicon (invited).", MRS Symp. Proc. 283 (1993) p.p. 337-342. |
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N. Koshida: Optoelectronic Properties of Porous Silicon., Optical Properties of Low Dimensional Silicon Structures, ed. D. Bensahel (Kluwer Acad., Dordrecht, 1993) p.p. 133-138. |
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N. Koshida and H. Koyama: "Visible electroluminescence from porous silicon.", Appl. Phys. Lett. 60(3) (1992) 347-349. |
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N. Koshida and H. Koyama: "Visible electro- and photoluminescence from porous silicon and its related optoelectronic properties.", MRS Symposium Proc. 256 (1992) p.p. 219-222. |
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N. Koshida and H. Koyama: "Visible photo- and electroluminescent properties of porous silicon.", Nanotechnology 3 (1992) 192-195. |
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N. Koshida , Y. Kiuchi and S. Yoshimura: "Photoconduction effects of porous Si in the visible region.", Proc. 10th Symp. Photoelectron. Image Devices, London 1991 (IOP Pub., Bristol, 1992) p.p. 377-384. |
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