| 2000 | 1999 | 1998 | 1997 | 1996 | 1995 | 1994 | 1993 | 1992 |
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B. Gelloz , A. Bsiesy and N. Koshida: "Conduction and Luminescent Properties of Wet Porous Silicon", J. Porous Materials 7 (2000) 103-106. |
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A. Kumagai , Y. Kanegawa , Y. Suda and N. Koshida: "Improvement of Porous Si Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source", J. Porous Materials 7 (2000) 73-76. |
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K. Ueno and N. Koshida: "Optical Accessibility of Light-Emissive Nanosilicon Memory", phys. stat. sol. (a) 182 (2000) 579-583. |
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M. Takahashi, Y. Toriumi, and N. Koshida: "Current-Induced Optical Effect in Porous Silicon Fabry-Perot Resonators", phys. stat. sol. (a) 182 (2000) 567-571. |
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K. Ueno and N. Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes", Appl. Phys. Lett. 74 (1999) 93-95. |
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N. Koshida and B. Gelloz: Wet and Dry Porous Silicon, Currnet Opinion in Colloid and Interface Science, ed. L. Brus (Elsevier Science, Oxford, 1999) p.p. 309-313. |
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N. Koshida, K. Ueno and X. Sheng: "Field-induced functions of porous Si as a confined system.", Journal of Luminescence 80 (1999) 37-42. |
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S. Tanaka, H. Koyama and N. Koshida: "Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration", Appl. Phys. Lett. 73 (1998) 2334-2336. |
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H. Koyama , Y. Matsushita and N. Koshida: "Activation of blue emission from oxidized porous silicon by annealing in water vapor.", J. Appl. Phys. 82 (1998) . |
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K. Ueno and N. Koshida: "Negative-Resistance Effects in Electroluminescent Porous Silicon Diodes.", Jpn. J. Appl. Phys. 37 (1998) 1096-1099. |
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T. Matsumoto , Y. Masumoto and N. Koshida: "Photo- and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes", Mat. Res. Soc. Symp. Proc. 486 (1998) p. . |
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Y. Suda , K. Obata and N. Koshida: "Observation of Band Dispersions in Photoluminescent Porous Silicon", Phys. Rev. Lett. 80 (1998) . |
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K. Ueno , H. Koyama and N. Koshida: "Nonlinear electrical functions of porous silicon light-emitting diodes.", Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 699-704. |
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Y. Suda , K. Obata , A. Kumagai and N. Koshida: "Roles of surface termination in photoluminescence mechanisms of porous silicon.", Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 455-460. |
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T. Matsumoto , Y. Masumoto and N. Koshida: "Optical properties of deuterium terminated porous silicon.", Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 449-454. |
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H. Koyama and N. Koshida: "Spectroscopic analysis of blue-green emission from oxidized porous silicon : possible evidence for Si-nanostructure-based mechanism.", Solid State Comm. 103 (1997) 37-41. |
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H. Mizuno , H. Koyama and N. Koshida: "Photo-assisted continuous tuning of photoluminescence spectra of porous silicon from red to blue.", Thin Solid Films 297 (1997) 61-63. |
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T. Matsumoto , A. Masumoto , S. Nakajima and N. Koshida: "Luminescence from deuterium-terminated porous silicon.", Thin Solid Films 297 (1997) 31-34. |
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H. Mizuno , H. Koyama and N. Koshida: "Oxide-free blue photoluminescence from photochemically etched porous silicon.", Appl. Phys. Lett. 69 (1996) 3779-3781. |
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Y. Suda , T. Koizumi , K. Obata , Y. Tezuka , S. Shin and N. Koshida: "Electronic surface structures and photoluminescence mechanisms of porous Si.", J. Electrochem. Soc. 143 (1996) 2502-2507. |
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H. Koizumi , Y. Suda and N. Koshida: "Effects of oxidation on electronic states and photoluminescence properties of porous silicon.", Jpn. J. Appl. Phys. 35 (1996) L803-L806. |
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H. Koyama , N. Shima and N . Koshida: "Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon.", Phys. Rev. B 53(20) (1996) R13291-R13294. |
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T. Ozaki , T. Oguro , H. Koyama and N. Koshida: "The Relationship between Photoconduction Effects and Luminescent Properties of Porous Silicon.", Jpn. J. Appl. Phys. 34 (1995) 947-950. |
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N. Koshida , H. Koyama et al.: "Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism.", Mat. Res. Soc. Symp. Proc. 358 (1995) 695-700. |
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H. Koyama and N. Koshida: "Polarization retention of photoluminescence from porous silicon.", Phys. Rev. B 52 (1995) 2649-2655. |
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H. Koyama , T. Ozaki , and N. Koshida: "Decay dynamics of the homogeneously-broadened photoluminescence from porous silicon.", Phys. Rev. B 52 (1995) R11561-R11564. |
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N. Koshida: Interrelations between Electrical Properties and Visible Luminescence of Porous Silicon., Porous Silicon Science and Technology, ed. J.C. Vial (Les Ed. de Phys., Marseille, 1995) p.p. 324-328. |
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H. Koyama , T. Oguro and N. Koshida: "Post-anodization filtered illumination of porous silicon in HF solutions to improve the luminescence characteristics.", Appl. Phys. Lett. 65 (1994) 1656-1658. |
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T. Ozaki , M. Araki , S. Yoshimura , H. Koyama and N. Koshida: "Photoelectronic properties of porous Si.", J. Appl. Phys. 76 (1994) 1986-1988. |
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T. Ban , Y. Suda , T. Koizumi , H. Koyama , Y. Tezuka , S. Shin and N. Koshida: "Effects of anodization current density on luminescence properties of porous silicon.", Jpn. J. Appl. Phys. 33 (1994) 5603-5607. |
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L. T. Canham and N. Koshida: Silicon-Based Materials for Light Emission., Semiconductor Si/1994, ed. H. Huff, W. Bergholz and K. Sumino (Electrochem. Soc., Pennington, 1994) p.p. 457-459. |
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T. Ueno , Y. Akiba , T. Shinohara , H. Koyama , N. Koshida and Y. Tarui: "Radiative transition with visible light in electrochemically anodized polycrystalline silicon.", Jpn. J. Appl. Phys. 32 (1993) L5-L7. |
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N. Koshida and H. Koyama: "Visible electroluminescence from porous silicon.", Appl. Phys. Lett. 60(3) (1992) 347-349. |
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N. Koshida , Y. Kiuchi and S. Yoshimura: "Photoconduction effects of porous Si in the visible region.", Proc. 10th Symp. Photoelectron. Image Devices, London 1991 (IOP Pub., Bristol, 1992) p.p. 377-384. |
nano-Si/Photoluminescence, Electrical Properties