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T. Nakagawa, H. Sugiyama and N. Koshida: "Fabrication of Periodic Si Nanostructure by Controlled Anodization", Jpn. J. Appl. Phys. 37(Part 1, No. 12B) (1998) 7186-7189. |
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T. Matsumoto , Y. Masumoto , S. Nakashima , H. Mimura and N. Koshida: "Coupling effect of surface vibration and quantum confinement carriers in porous silicon.", Appl. Surf. Sci. 113/114 (1997) L1089-L1091. |
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T. Nakagawa, H. Koyama and N. Koshida: "Effects of External Magnetic Field on the Formation and Optical Properties of Luminescent Porous Silicon.", Proc. ECS Int. Symp. on Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, Montreal, Canada 1997 (ECS, Pennington, 1997) p.p. 253-241. |
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T. Nakagawa , H. Koyama and N. Koshida: "Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization.", Appl. Phys. Lett. 69 (1996) 3206-3208. |
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H. Tanino , A. Kuprin , Y. Deai and N. Koshida: "Raman study of free-standing porous silicon.", Phys. Rev. B 52 (1996) 1937-1947. |
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N. Koshida, H. Koyama, Y. Suda et al.: "Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses.", Appl. Phys. Lett. 63(20) (1993) 2774-2776. |
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Y. Uchida , N. Koshida and H. Koyama: "Paramagnetic center in porous silicon : A dangling bond with C3V symmetry.", Appl. Phys. Lett. 63(7) (1993) 961-963. |
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N. Koshida and H. Koyama: "Optoelecronic characterizations of porous silicon (invited).", MRS Symp. Proc. 283 (1993) p.p. 337-342. |
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N. Koshida: Optoelectronic Properties of Porous Silicon., Optical Properties of Low Dimensional Silicon Structures, ed. D. Bensahel (Kluwer Acad., Dordrecht, 1993) p.p. 133-138. |