Koshida Lab. : Publications -- nano-Si/Light-Emitting Device, Photonic Integration

nano-Si/Light-Emitting Device, Photonic Integration

2003

B. Gelloz, A. Bsiesy, and R. Herino:
"Electrically induced luminescence quenching in p+-type and anodically oxidized n-type wet porous silicon"
J. Appl. Phys. 94, 2381-2389 (2003).

B. Gelloz and N. Koshida:
"Effects of Amorphous Carbon Films on the Performance of Porous Silicon Electroluminescence",
Mat. Res. Soc. Symp. Proc. 737(2003) 581-586.

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2002

K. Yamada, K. Goto, Y. Nakajima, N. Koshida, and H. Shinoda:
"Wire-Free Tactile Sensing Element based on Optical Connection",
Proc. 19th Sensor Symposium (2002) (in press).

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2001

N. Koshida, J. Kadokura, M. Takahashi, and K. Imai:
"Stabilization of Porous Silicon Electroluminescence by Surface Capping with Silicon Dioxide Films",
Mat. Res. Soc. Proc. 638 (2001) F18.3.1.

Y. Toriumi, M. Takahashi, and N. Koshida:
"A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection",
Mat. Res. Soc. Proc. 638 (2001) F8.3.1.

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M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto and N. Koshida:
"Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators.",
Appl. Phys. Lett. 76 (2000) 1990-1992.

B. Gelloz and N. Koshida:
"Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode.",
J. Appl. Phys. 88(7) (2000) 4391-4324.

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1999

M. Takahashi and N. Koshida:
"Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides.",
J. Appl. Phys. 86(9) (1999) 5274-5278.

H. Mizuno , N. Koshida:
"Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation.",
Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 179-184.

B. Gelloz , T. Nakagawa and N. Koshida:
"Enhancing the External Quantum Efficiency of Porous Silicon Leds Beyond 1% by a Post Anodization Electrochemical Oxidation",
Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 15-20.

M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto and N. Koshida:
"Nonlinear refractive index change in porous silicon Fabry-Perot resonators.",
Proc. Int. ECS Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999.10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 35-42.

B. Gelloz and N. Koshida:
"Enhancing Efficiency and Stability of Electroluminescence of Porous Silicon Using Electrochemical Techniques",
Proc. Int. Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999. 10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 27-34.

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1998

B. Gelloz, T. Nakagawa and N. Koshida:
"Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation.",
Appl. Phys. Lett. 73 (1998) 2021-2023.

M. Takahashi, M. Araki and N. Koshida:
"Buried Optical Waveguide of Porous Silicon",
Jpn. J. Appl. Phys 37 (1998) L1017-L1019.

N. Koshida , E. Takizawa , H. Mizuno , H. Koyama and T. Sameshima:
"Electroluminescent Devices on Polycrystalline Silicon Films for Large-Area Applications",
Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 151-156.

M. Araki , M. Takahashi , H. Koyama and N. Koshida:
"Performances of Porous Silicon Optical Waveguides.",
Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 107-112.

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1997

T. Oguro , H. Koyama , T. Ozaki and N. Koshida:
"Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices.",
J. Appl. Phys. 81 (1997) 1407-1412.

T. Matsumoto , Y. Masumoto , T. Nakagawa , M. Hashimoto , K. Ueno and N. Koshida:
"Electroluminescence from deuterium-terminated porous silicon.",
Jpn. J. Appl. Phys. 36 (1997) L1089-L109.

M. Araki , H. Koyama and N . Koshida:
"Functional properties of luminescent porous silicon as a component of optoelectronic integration.",
Superlattices and Microstructures 22 (1997) 365-370.

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1996

M. Araki , H. Koyama and N. Koshida:
"Fabrication and fundamental properties of an edge-emitting device with step-index porous silicon waveguide.",
Appl. Phys. Lett. 68(21) (1996) 2999-3000.

M. Araki , H. Koyama and N. Koshida:
"Controlled electroluminescence of porous silicon diodes with a vertical optical cavity.",
Appl. Phys. Lett. 52 (1996) 2956-2958.

M. Araki , H. Koyama and N. Koshida:
"Precisely tuned emission from porous silicon vertical optical cavity in the visible region.",
J. Appl. Phys. 80 (1996) 4841-4844.

M. Araki , H. Koyama and N. Koshida:
"Optical Cavity Based on Porous Silicon Superlattice Technology.",
Jpn. J. Appl. Phys. 35(2) (1996) 1041-1044.

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1995

T. Matsumoto , M. Daimon , H. Mimura , Y. Kanemitsu and N. Koshida:
"Optically induced absorption in porous silicon and its application to logic gates.",
J. Electrochem Soc. 142 (1995) 3528-3533.

N. Koshida , H. Mizuno , H. Koyama and G. J. Collins:
"Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts.",
Jpn. J. Appl. Phys. 34(Suppl. 34-1) (1995) 92-94.

M. Araki , H. Koyama and N. Koshida:
"Precisely tuned optical cavity using porous silicon superlattice structures.",
Proc Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 139-145.

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1993

N. Koshida , H. Koyama , Y. Yamamoto and G. Collins:
"Visible electroluminescence from porous silicon diodes with an electropolymerized contact.",
Appl. Phys. Lett. 63(19) (1993) 2655-2657.

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1992

N. Koshida and H. Koyama:
"Visible electro- and photoluminescence from porous silicon and its related optoelectronic properties.",
MRS Symposium Proc. 256 (1992) p.p. 219-222.

N. Koshida and H. Koyama:
"Visible photo- and electroluminescent properties of porous silicon.",
Nanotechnology 3 (1992) 192-195.

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