Jun-ichi
SHIRAKASHI received the Ph.D. degree in electrical and
electronic engineering from Tokyo Institute of Technology, Tokyo, Japan,
in 1995. Through his postgraduate course, he was engaged in research on the
metalorganic molecular beam epitaxial (MOMBE) growth of III-V compound
semiconductors and heterojunction bipolar transistors (HBTs) with an ultra-high
carbon-doped base. In 1995, he joined Electrotechnical Laboratory (ETL), Tsukuba, Japan,
where he was engaged in research on single-electron transistors (SETs) and
novel nanofabrication techniques using scanning probe microscopes (SPMs). He
achieved the room temperature operation of niobium (Nb)-based SETs in 1997. In
this study, the basic SET structures were fabricated by the SPM-based local
oxidation. He moved to AkitaPrefecturalUniversity,
Akita, Japan, as an associate professor in
1999. Since 2004, he was an associate professor in Department of Electrical and
Electronic Engineering, Tokyo University of Agriculture and Technology, Tokyo, Japan.
In 2015, he has been appointed as a professor at the Tokyo University of
Agriculture and Technology. Currently, he is interested in nanofabrication
techniques using electron-beam lithography (EBL), single-electron devices, quantum
nanoscale devices/systems and new computing architectures using Ising spin model.
He received the Young Researcher
Award of the International Conference on Solid State Devices and Materials in
1995. He also received the 3rd JSAP Awards for Research Paper Presentation in
1998 and the 21st JSAP Award for the Most Promising Young Scientist in 1999,
both from the Japan Society of Applied Physics, and 1st Best Presentation Award
in 2001 from the Magnetic Society of Japan. He is a member of the Japan Society
of Applied Physics and the Magnetic Society of Japan.
