| Name of your university | Tokyo University of Agriculture and Technology |
| Full name | Bernard GELLOZ |
| Year of birth | 1969 |
| Current appointment (position and institution) | Research Associate, Koshida Lab. (Si nano-structures, nano-devices and opto-electronics), Dept. of Electronic & Electrical Eng., Faculty of Technology. |
| Address | Koganei-shi, 2-24-16 Nakacho,184-8588 Tokyo, JAPAN. |
| Telephone | +81-423-88-7433 |
| Fax | +81-423-85-5395 |
| bgelloz@cc.tuat.ac.jp | |
| URL | http://www.tuat.ac.jp/~koslab/ |
| Fields of general research | Solid state physics |
| Fields of specialization |
Porous silicon Si-based Electroluminescence Si-based Opto-electronics and photonics |
| Subject of research work and/or titles of lecture and discussion |
High efficiency electroluminescence from nano-crystalline porous silicon. High stability electroluminescence from nano-crystalline porous silicon. Electroluminescence from silicon nano-crystals. Silicon optoelectronic devices and integration. |
| Research reports (papers and reviews) within recent 5 years |
B. Gelloz and N. Koshida, Electroluminescence of Nanocrystalline Porous Silicon Devices, in Handbook of Luminescence, Display Materials, and Devices, Edited by H. S. Nalwa and L. S. Rohwer, Chap. V, (2003). B. Gelloz, J. Kadokura, R. Boukherroub, D. Wayner, D. Lockwood and N. Koshida, “Electroluminescence Stabilization of Nanocrystalline Porous Silicon Diodes Electrochem. Soc. Symp. Proc. In press, (2002). B. Gelloz and N. Koshida, Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode, Journal of Applied Physics, 88 (7), 4319-4324, (2000). B. Gelloz, A. Bsiesy and R. Herino, Porous silicon photoluminescence quenching by photogenerated minority charge carriers, Journal of Luminescence, 82 (3), 205-211, (1999). N. Koshida and B. Gelloz, Wet and dry porous silicon, Current Opinion in Colloid&Interface Science, 4, 309-313, (1999). B. Gelloz, T. Nakagawa and N. Koshida, Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation, Applied Physics Letters, 73 (14), 2021-2023, (1998). |
| Research theme of doctor course students in your laboratory |
Analysis of ballistic electron transport in nano-crystalline porous silicon. Solid-state planar luminescent device based on ballistic electron excitation. Monolithically integrated silicon opto-electronics. Phased array ultrasonic generation using nano-crystalline porous silicon. |
| French researchers You collaborated with |
Prof. R. Herino, Laboratoire de Spectrometrie Physique, Universite J. Fourier, Grenoble 1. Prof. A. Bsiesy, SPINTEC, CEA, Grenoble. |