Abstract
We have studied micrometer-scale scanning probe microscopy (SPM) local-oxidation lithography on Si. In order to perform large-scale oxidation, an SPM tip with a contact area of 2.5 ×1.9 µm2, which is about 12,000 times larger than that of a conventional SPM tip, was prepared. The width of the Si oxide produced was clearly determined by the contact length of the tip. Furthermore, the throughput reached 125 µm2/s, which is 10,000 times larger than that of conventional SPM local oxidation. The SPM tip with a larger contact area may increase the spatial dimension of the water meniscus, resulting in a larger oxidized area. It is suggested from our results that SPM local oxidation can be upscaled by using a larger tip radius.