nano-Si/PL発光・EL発光・電気的特性
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R. Sugaya, K. Kuniyoshi, S. Yamamoto, S. Hada, K. Yamazaki, N. Koshida,
T. Kasahara, T. Nakamura, Multicolor Band-Edge Electrochemiluminescence
of Colloidal Silicon Quantum Dots in a Thin-Layer Cell, ACS Appl. Opt.
Mater. 3 (1), 178–187 (2025). |
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Takayuki Higuchi, Nobuyoshi Koshida, Toshihiro Nakamura, Low-temperature
high-yield fabrication of colloidal Si quantum dots with in situ
tunability for luminescence band from red to green, J. Appl. Phys. 135,
094303 (2024). https://doi.org/10.1063/5.0186551 |
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Toshihiro Nakamura and Nobuyoshi Koshida,
(Invited) Facile Formation of Luminescent Colloidal Silicon Quantum Dots from Porous Silicon,
ECS Meeting Abstracts, Vol. MA2021-01, p. 906. |
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Toshihiro Nakamura, Nobuyoshi Koshida, Ze Yuan, and Jun Otsubo,
High-yield green fabrication of colloidal silicon quantum dots by low-temperature thermal cracking of porous silicon,
APL Mater. 8, 081105 (2020) 8 pages. doi: 10.1063/5.0014206. |
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Ying-Chiao Wang, Shao-Ku Huang, Toshihiro Nakamura, Yu-Ting Kao,
Chun-Hao Chiang, Di-Yan Wang, Yuan-Jay Chang, Nobuyoshi Koshida,
Toshikazu Shimada, Shihao Liu, Chun-Wei Chen, and Kazuhito Tsukagoshi,
Quantum-Assisted Photoelectric Gain Effects in Perovskite Solar Cells,
NPG Asia Materials 12, Article Number: 54 (2020) 10 pages. https://doi.org/10.1038/s41427-020-00236-1. |
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Bernard Gelloz, Firman Bagja Juangsa, Tomohiro Nozaki, Nobuyoshi Koshida, Lianhua Jin: "Si/SiO2 core/shell luminescent silicon nanocrystals and porous silicon powders with high quantum yield, long lifetime and good stability" Frontiers in Physics, section Optics and Photonics 7, 47 (2019). DOI: 10.3389/fphy.2019.00047 |
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N. Koshida and T. Nakamura: "Emerging Functions of Nanostructured Porous Silicon –With a focus on the emissive properties of photons, electrons, and ultrasound, Frontiers in Chemistry" Advances in Porous Semiconductors Science and Technology 7, 273 (2019) (in press). DOI: 10.3389/fchem.2019.00273 |
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R. Mentek, B. Gelloz, D. Hippo, and N. Koshida: "Photovoltaic effect with high open circuit voltage observed in electrochemically prepared nanocrystalline silicon membranes" Mater. Sci. & Eng. B 190, 33–40 (2014) |
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N. Koshida, N. Ikegami, A. Kojima, R. Mentek, R. Suda, M. Yagi, J. Shirakashi, B. Gelloz, and N. Mori: "Ballistic hot electron effects in nanosilicon dots and their photonic applications (Invited)" ECS Transactions, 61(5) Nanoscale Luminescent Materials 3, Ed. P. Mascher and D.J. Lockwood, 47-54 (2014). |
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B. Gelloz, R. Mentek and N. Koshida: "Ultraviolet and Long-lived Blue Luminescence of Oxidized Nano-Porous Silicon and Pure Nano-Porous Glass" ECS J. Solid State Sci. Technol 3(5) R83-R88 (2014). |
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S. Okabe, M. Nagasawa, T. Kihara, M. Kato, T. Harada, N. Koshida, K. Mogi, and T. Kikusui: "Pup odor and ultrasonic vocalizations synergistically stimulate maternal attention in mice" Behavioral Neuroscience 127 432-438 (2013). |
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N. Mori, M. Tomita, H. Inari, T. Watanabe, and N. Koshida: "Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array" Jpn. Appl. Phys. 52 04CJ04 (2013). |
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B. Gelloz, R. Mentek, and N. Koshida: Ultraviolet and Long-lived Blue Luminescence of Oxidized Porous Silicon (Invited)" ECS Transactions 53(4) 103-111 (2013). |
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B. Gelloz, R. Mentek, and N. Koshida: "Optical properties of phosphorescent nanosilicon electrochemically doped with terbium" Phys. Status Solidi C 9(12), 2318–2321 (2012). |
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B. Gelloz and N. Koshida: "Blue Phosphorescence in Oxidized Nano-Porous Silicon" ECS Journal of Solid State Science and Technology, 1(6), R1-R5 (2012). |
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B Gelloz, A. Loni, L. Canham, and N. Koshida: "Luminescence of mesoporous silicon powders treated by high-pressure water vapor annealing" Nanoscale Research Letters 7 382 (2012). |
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B. Gelloz, and N. Koshida: "Blue Phosphorescence in Oxidized Nano-Porous Silicon (Invited)" ECS Transactions 45(5), "Nanoscale Luminescent Materials 2", 177-189 (2012). |
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W. Bousslama, H. Elhouichet, B. Gelloz, B. Sieber, M. Moreau, M. Férid, and N. Koshida: "Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol-Gel Method" Jpn. Appl. Phys. 51, 04DG13 (2012). |
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Romain Mentek, Bernard Gelloz and Nobuyoshi Koshida: "Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers" Jpn. Appl. Phys. 51, 02BP05 (2012). |
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W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid, and N. Koshida: " Energy transfer induced Eu3+ photoluminescence enhancement in tellurite glass" J. Lumin. 132 205-209 (2012). |
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B. Gelloz, N. Harima, H. Koyama, H. Elhouichet, and N. Koshida: " Energy transfer from phosphorescent blue-emitting oxidized porous silicon to rhodamine 110" Appl. Phys. Lett. 97 171107/1-3 (2010). |
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M. Fujita, B. Gelloz, N. Koshida, and S. Noda: " Reduction of surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water vapor annealing" Appl. Phys. Lett. 97 121111/1-3 (2010). |
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B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, and N. Koshida: " Electropolymerization of Poly(para-phenylene)vinylene Films onto and inside Porous Si Layers of Different Types and Morphologies" J. Electrochem. Soc. 157(12) D648-D655 (2010). |
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B. Gelloz and N. Koshida: " Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing" Thin Solid Films 518(12) 3276-3279 (2010). |
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T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, L. Jin,c and N.
Koshida: " Direct Electropolymerization of Poly(para-phenylene)vinylene Films on Si and Porous Si" J. Electrochem. Soc. 157(5) H534-H539 (2010). |
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A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, M. Oueslati, and N.
Koshida: " Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory" Thin Solid Films 518 S212-S216 (2010). |
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A. Chouket, B. Gelloz, H. Koyama, H. Elhouichet1, M. Oueslati1, and N.
Koshida: " Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon" J. Luminescence 129 1332-1335 (2009). |
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Y. Hirano, K. Okamoto, S. Yamazaki, and N. Koshida: " Avalanche multiplication of photo-carriers in nanometer-sized silicon dot layers" Appl. Phys. Lett. 95 063109 (2009). |
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B. Gelloz and N. Koshida: "Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon" Appl. Phys. Lett． 94 201903-05 (2009). |
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B. Gelloz, R. Mentek and N. Koshida: "Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High Pressure Water Vapor Annealing" Jpn. J. Appl. Phys. 48 04C119-1-04C119-5 (2009). |
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B. Gelloz, H. Koyama and N. Koshida: "Polarization Memory of Blue and Red Luminescence from Nanocrystalline Porous Silicon Treated by High-Pressure Water Vapor Annealing" Thin Solid Films 517 376- 379 (2008). |
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B. Gelloz, H. Koyama and N. Koshida: "Polarization Memory of Blue and Red Luminescence from Nanocrystalline Porous Silicon Treated by High-Pressure Water Vapor Annealing" Thin Solid Films 517 376- 379 (2008). |
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M. Ghulinyan, B. Gelloz, T. Ohta, L. Pavesi, D.J. Lockwood, and N. Koshida: "Stabilized porous silicon optical superlattices with controlled surface passivation" Appl. Phys. Lett. 93 061113-115 (2008). |
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B. Gelloz, M. Sato and N. Koshida: "Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device" Jpn. J. Appl. Phys. 47 2902-2905 (2008). |
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A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, and N. Koshida: "Energy transfer in porous-silicon／laser-dye composite evidenced by polarization memory of photoluminescence" Appl. Phys. Lett. 91 211902/1-211902/3 (2007). |
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Yoshifumi Watabe, Yoshiaki Honda, and Nobuyoshi Koshida: "Effect of Bi-layer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter" Jpn. J. Appl. Phys. 46 6218-6221 (2007). |
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B. Gelloz and N. Koshida: "Highly Efficient and Stable Photoluminescene of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure" Jpn. J. Appl. Phys. 46 2429-2433 (2007). |
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B. Gelloz, Y. Coffinier, B. Salhi, N. Koshida, G. Patriarche, and R. Boukherroub: "Synthesis and Optical Properties of Silicon Oxide Nanowires" Mater. Res. Soc. Symp. Proc. 958 L05.10-15 (2007). |
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B. Salhi, B. Gelloz, N. Koshida, G. Patriarche, R. Boukherroub: "Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing" physica status solidi (a) 204 1302-1306 (2007). |
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B. Gelloz, T. Shibata, R. Mentek, and N. Koshida: "Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon" Mater. Res. Soc. Symp. Proc. 958 L08.02-07 (2007). |
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B. Gelloz, T. Shibata and N. Koshida: "Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing" physica status solidi (a) 204 2141-2144 (2007). |
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B. Gelloz and N. Koshida: "Highly Enhanced Efficiency and Stability of Photo- and Electro- Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor Annealing" Jpn. J. Appl. Phys. 45 3462-3465 (2006). |
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B. Gelloz, T. Shibata and N. Koshida: "Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing" Appl. Phys. Lett. 89 191103-05 (2006). |
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B. Gelloz and N. Koshida: "Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing" Thin Solid Films 508 406-409 (2006). |
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B. Gelloz and N. Koshida: "Mechanism of a remarkable enhancement in the light emission from nanocrystalline porous silicon annealed in high-pressure water vapor." J. Appl. Phys. B 98 123509-15 (2005). |
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B. Gelloz, A. Kojima, and N. Koshida: "Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing." Appl. Phys. Lett. 87 031107-3 (2005). |
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B. Gelloz, H. Sano, R. Boukherroub, D.D.M. Wayner, D.J. Lockwood, and N. Koshida: "Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid". phys. stat. sol. (c)2 No.9, 3273-3277 (2005). |
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B. Gelloz, A. Kojima and N. Koshida: "Improved optoelectronic characteristics of nanocrystalline porous silicon by high-pressure water vapor annealing". Mater. Res. Soc. Symp. Proc. 832, 141-146 (2005). |
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B. Gelloz and N. Koshida: "High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer" Jpn. J. Appl. Phys, 43(2004) 1981-1985. |
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B. Gelloz,
A. Bsiesy, and R. Herino: "Electrically induced luminescence quenching in p+-type and anodically oxidized n-type wet porous silicon" J. Appl. Phys. 94, 2381-2389 (2003). |
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B. Gelloz and N. Koshida: "Effects of Amorphous Carbon Films on the Performance of Porous Silicon Electroluminescence" Mater. Res. Soc. Symp. Proc. 737(2003) 581-586. |
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N. Koshida,
J. Kadokura,
M. Takahashi, and K. Imai: "Stabilization of Porous Silicon Electroluminescence by Surface Capping with Silicon Dioxide Films" Mat. Res. Soc. Proc. 638 (2001) F.18.3.1-F.18.3.6. |
| B. Gelloz , A. Bsiesy and N. Koshida: "Conduction and Luminescent Properties of Wet Porous Silicon", J. Porous Materials 7 (2000) 103-106. |
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A. Kumagai ,
Y. Kanegawa ,
Y. Suda and N. Koshida: "Improvement of Porous Si Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source" J. Porous Materials 7 (2000) 73-76. |
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K. Ueno and N. Koshida: "Optical Accessibility of Light-Emissive Nanosilicon Memory" phys. stat. sol. (a) 182 (2000) 579-583. |
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M. Takahashi,
Y. Toriumi, and N. Koshida: "Current-Induced Optical Effect in Porous Silicon Fabry-Perot Resonators" phys. stat. sol. (a) 182 (2000) 567-571. |
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B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode." J. Appl. Phys. 88(7) (2000) 4391-4324. |
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K. Ueno and N. Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes" Appl. Phys. Lett. 74 (1999) 93-95. |
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N. Koshida and B. Gelloz: Wet and Dry Porous Silicon, Currnet Opinion in Colloid and Interface Science, ed. L. Brus (Elsevier Science, Oxford, 1999) p.p. 309-313. |
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N. Koshida,
K. Ueno and X. Sheng: "Field-induced functions of porous Si as a confined system." Journal of Luminescence 80 (1999) 37-42. |
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H. Mizuno ,
N. Koshida: "Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation." Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 179-184. |
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B. Gelloz ,
T. Nakagawa and N. Koshida: "Enhancing the External Quantum Efficiency of Porous Silicon Leds Beyond 1% by a Post Anodization Electrochemical Oxidation" Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 15-20. |
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B. Gelloz and N. Koshida: "Enhancing Efficiency and Stability of Electroluminescence of Porous Silicon Using Electrochemical Techniques" Proc. Int. Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999. 10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 27-34. |
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S. Tanaka,
H. Koyama and N. Koshida: "Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration" Appl. Phys. Lett. 73 (1998) 2334-2336. |
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H. Koyama ,
Y. Matsushita and N. Koshida: "Activation of blue emission from oxidized porous silicon by annealing in water vapor." J. Appl. Phys. 82 (1998) . |
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K. Ueno and N. Koshida: "Negative-Resistance Effects in Electroluminescent Porous Silicon Diodes." Jpn. J. Appl. Phys. 37 (1998) 1096-1099. |
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T. Matsumoto ,
Y. Masumoto and N. Koshida: "Photo- and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes" Mat. Res. Soc. Symp. Proc. 486 (1998) p. . |
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Y. Suda ,
K. Obata and N. Koshida: "Observation of Band Dispersions in Photoluminescent Porous Silicon" Phys. Rev. Lett. 80 (1998) . |
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B. Gelloz,
T. Nakagawa and N. Koshida: "Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation." Appl. Phys. Lett. 73 (1998) 2021-2023. |
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N. Koshida ,
E. Takizawa ,
H. Mizuno ,
H. Koyama and T. Sameshima: "Electroluminescent Devices on Polycrystalline Silicon Films for Large-Area Applications" Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 151-156. |
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K. Ueno ,
H. Koyama and N. Koshida: "Nonlinear electrical functions of porous silicon light-emitting diodes." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 699-704. |
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Y. Suda ,
K. Obata ,
A. Kumagai and N. Koshida: "Roles of surface termination in photoluminescence mechanisms of porous silicon." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 455-460. |
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T. Matsumoto ,
Y. Masumoto and N. Koshida: "Optical properties of deuterium terminated porous silicon." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 449-454. |
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H. Koyama and N. Koshida: "Spectroscopic analysis of blue-green emission from oxidized porous silicon : possible evidence for Si-nanostructure-based mechanism." Solid State Comm. 103 (1997) 37-41. |
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H. Mizuno ,
H. Koyama and N. Koshida: "Photo-assisted continuous tuning of photoluminescence spectra of porous silicon from red to blue." Thin Solid Films 297 (1997) 61-63. |
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T. Matsumoto ,
A. Masumoto ,
S. Nakajima and N. Koshida: "Luminescence from deuterium-terminated porous silicon." Thin Solid Films 297 (1997) 31-34. |
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T. Oguro ,
H. Koyama ,
T. Ozaki and N. Koshida: "Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices." J. Appl. Phys. 81 (1997) 1407-1412. |
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H. Mizuno ,
H. Koyama and N. Koshida: "Oxide-free blue photoluminescence from photochemically etched porous silicon." Appl. Phys. Lett. 69 (1996) 3779-3781. |
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Y. Suda ,
T. Koizumi ,
K. Obata ,
Y. Tezuka ,
S. Shin and N. Koshida: "Electronic surface structures and photoluminescence mechanisms of porous Si." J. Electrochem. Soc. 143 (1996) 2502-2507. |
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H. Koizumi ,
Y. Suda and N. Koshida: "Effects of oxidation on electronic states and photoluminescence properties of porous silicon." Jpn. J. Appl. Phys. 35 (1996) L803-L806. |
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H. Koyama ,
N. Shima and N . Koshida: "Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon." Phys. Rev. B 53(20) (1996) R13291-R13294. |
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T. Ozaki ,
T. Oguro ,
H. Koyama and N. Koshida: "The Relationship between Photoconduction Effects and Luminescent Properties of Porous Silicon." Jpn. J. Appl. Phys. 34 (1995) 947-950. |
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N. Koshida ,
H. Koyama et al.: "Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism." Mat. Res. Soc. Symp. Proc. 358 (1995) 695-700. |
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H. Koyama and N. Koshida: "Polarization retention of photoluminescence from porous silicon." Phys. Rev. B 52 (1995) 2649-2655. |
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H. Koyama ,
T. Ozaki , and N. Koshida: "Decay dynamics of the homogeneously-broadened photoluminescence from porous silicon." Phys. Rev. B 52 (1995) R11561-R11564. |
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N. Koshida: Interrelations between Electrical Properties and Visible Luminescence of Porous Silicon., Porous Silicon Science and Technology, ed. J.C. Vial (Les Ed. de Phys., Marseille, 1995) p.p. 324-328. |
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H. Koyama ,
T. Oguro and N. Koshida: "Post-anodization filtered illumination of porous silicon in HF solutions to improve the luminescence characteristics." Appl. Phys. Lett. 65 (1994) 1656-1658. |
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T. Ozaki ,
M. Araki ,
S. Yoshimura ,
H. Koyama and N. Koshida: "Photoelectronic properties of porous Si." J. Appl. Phys. 76 (1994) 1986-1988. |
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T. Ban ,
Y. Suda ,
T. Koizumi ,
H. Koyama ,
Y. Tezuka ,
S. Shin and N. Koshida: "Effects of anodization current density on luminescence properties of porous silicon." Jpn. J. Appl. Phys. 33 (1994) 5603-5607. |
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L. T. Canham and N. Koshida: Silicon-Based Materials for Light Emission., Semiconductor Si/1994, ed. H. Huff, W. Bergholz and K. Sumino (Electrochem. Soc., Pennington, 1994) p.p. 457-459. |
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T. Ueno ,
Y. Akiba ,
T. Shinohara ,
H. Koyama ,
N. Koshida and Y. Tarui: "Radiative transition with visible light in electrochemically anodized polycrystalline silicon." Jpn. J. Appl. Phys. 32 (1993) L5-L7. |
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N. Koshida and H. Koyama: "Visible electroluminescence from porous silicon." Appl. Phys. Lett. 60(3) (1992) 347-349. |
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N. Koshida ,
Y. Kiuchi and S. Yoshimura: "Photoconduction effects of porous Si in the visible region." Proc. 10th Symp. Photoelectron. Image Devices, London 1991 (IOP Pub., Bristol, 1992) p.p. 377-384. |
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N. Koshida and H. Koyama: "Visible electro- and photoluminescence from porous silicon and its related optoelectronic properties." MRS Symposium Proc. 256 (1992) p.p. 219-222. |
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N. Koshida and H. Koyama: "Visible photo- and electroluminescent properties of porous silicon." Nanotechnology 3 (1992) 192-195. |
| Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, and Hideyuki Ohyi, "Development of Massive Parallel Electron Beam Write (MPEBW) System :Aiming at Digital Fabrication of Integrated Circuit, Jpn. J. Appl. Phys. 61, SD0807/1-19 (2022). https://doi.org/10.35848/1347-4065/ac4ce1 |
| Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, Masanori Sugata, and Hideyuki Ohyi "Development of massive parallel electron beam write system", Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780B (27 June 2019); https://doi.org/10.1117/12.2532971 |
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"Ryutaro Suda, Akira Kojima, and Nobuyoshi Koshida: Mechanism of liquid-phase reductive thin-film deposition under quasiballistic electron incidence" ECS J. of Solid State Sci. and Tech. 7(11), Q222-Q227 (2018). DOI: 10.1149/2.0311811jss |
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Akira Kojima, Ryutaro Suda, and Nobuyoshi Koshida: "Improved quasiballistic electron emission from a nanocrystalline Si cold cathode with a monolayer-graphene surface electrode" Appl. Phys. Lett. 112 133102 (2018). DOI: 10.1063/1.5017770 |
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Ryutaro Suda, Mamiko Yagi, Akira Kojima, Nobuya Mori, Jun-ichi Shirakashi, and Nobuyoshi Koshida: "Liquid-phase deposition of thin Si and Ge Films based on ballistic hot electron printing" Materials Sci. in Semiconductor Processing 70, 44 (2017). DOI: 10.1016/j.mssp.2016.12.022 |
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R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida: "Printing deposition of thin Cu films using highly reducing ballistic hot electrons" J. Electrochem. Soc. 163(6),E162-E165 (2016). DOI: 10.1149/2.0921606jes |
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A. Kojima, N. Ikegami, T. Yoshida, H. Miyaguchi, M. Muroyama, S. Yoshida, K. Totsu, N. Koshida, and M. Esashi: "Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system (Invited)" Proc. SPIE Symp. on Advanced Lithography 9777,977712-1～977712-9 (2016). DOI: 10.1038/micronano.2015.29 |
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Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Naokatsu Ikegami, Shuji Tanaka, Nobuyoshi Koshida, and Masayoshi Esashi: "Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography" Electronics and Communications in Japan 99(5), 11 (2016). DOI: 10.1002/ecj.11804 |
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M. Esashi, A. Kojima, N. Ikegami, H. Miyaguchi, and N. Koshida: "Development of massively parallel electron beam direct write lithography using active-matrix nanocrystalline-silicon electron emitter arrays" Microsystems & Nanoeng. 1, 15029 (2015). DOI: 10.1038/micronano.2015.29 |
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N. Koshida: "Electronic and Acoustic Applications of Anodized Nano-crystalline Silicon" ECS Transactions 69(2), 111-116 (2015). doi: 10.1149/06902.0111ecst |
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宮口裕、室山真徳、吉田慎哉、池上尚克、小島明、金子亮介、戸津健太郎、田中秀治、越田信義、江刺正喜: "超並列電子線描画用LSIの設計と評価" 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）, 135, No.10, 374-381 (2015). doi: 10.1541/ieejsmas.135.374 |
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N. Koshida, A. Kojima, N. Ikegami, R. Suda, M. Yagi, J. Shirakashi, H. Miyaguchi, M. Muroyama, S. Yoshida, K. Totsu, and M. Esashi: "Development of Ballistic Hot Electron Emitter and Its Applications to Parallel Processing: Active-Matrix Massive Direct-Write Lithography in Vacuum and Thin Film Deposition in Solutions" J. of Micro/Nanolithography, MEMS, and MOEMS 14 (3), 031215/1-7 (2015). doi: 10.1117/1.JMM.14.3.031215 |
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池上尚克、小島明、宮口裕、吉田孝、西野仁、吉田慎哉、室山真徳、菅田正徳、 越田信義、江刺正喜: "超並列電子線描画装置用アクテイブマトリクスナ ノ結晶 シリコン電子源の開発と動作特性評価に関するレビュー" 電気学会センサ・マイ クロマシン(Ｅ)部門誌 「センサシンポジウム受賞論文特集」135,221～229 (2015). doi: 10.1541/ieejsmas.135.221 |
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N. Koshida, A. Kojima, N. Ikegami, R. Suda, M. Yagi, J. Shirakashi, T. Yoshida, H. Miyaguchi, M. Muroyama, H. Nishino, S. Yoshida, M. Sugata, K. Totsu, and M. Esashi: "Development of Ballistic Hot Electron Emitter and its Applications to Parallel Processing: Active-Matrix Massive Direct-Write Lithography in Vacuum and Thin Films Deposition in Solutions" Proc. of SPIE Symp. on Advanced Lithography, 9423, 942313/1-8 (2015). doi: 10.1117/12.2085782 |
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R. Suda, M. Yagi, A. Kojima, R. Mentek, N. Mori, J. Shirakashi, and N. Koshida: "Deposition of thin Si and Ge films by ballistic hot electron reduction under a solution dripping mode and its application to the growth of thin SiGe films" Jpn. J. Appl. 54, 04DH11-1～04DH11-5 (2015). doi: 10.7567/JJAP.54.04DH11 |
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N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori,
and J. Shirakashi: "Low-Temperature Deposition of Thin Si, Ge, and SiGe Films Using Reducing Activity of Ballistic Hot Electrons" ECS Trans. 64(6), 405-410 (2014). |
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N. Koshida, N. Ikegami, A. Kojima, R. Mentek, R. Suda, M. Yagi, J. Shirakashi, B. Gelloz, and N. Mori: "Ballistic hot electron effects in nanosilicon dots and their photonic applications (Invited)" ECS Transactions, 61(5) Nanoscale Luminescent Materials 3, Ed. P. Mascher and D.J. Lockwood, 47-54 (2014). |
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A. Kojima, N. Ikegami, T. Yoshida, H.Miyaguchi, M. Muroyama, H.Nishino, S. Yoshida, M. Sugata, H. Ohyi, N. Koshida, and M. Esashi: "Massively Parallel EB Direct Writing (MPEBDW) System based on Micro Electro Mechanical System (MEMS)/nc-Si emitter array" Proc. SPIE Symp. on Advanced Lithography, 9049-43 (2014). |
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西野 仁、吉田慎哉、小島 明、池上尚克、田中秀治、越田信義、江刺正喜: "超並列電子線描画装置のためのピアース型ナノ結晶シリコン電子源アレイの作製" 電気学会論文誌Ｅ（センサ・ マイクロマシン部門誌）、134(6), 146-153 (2014). |
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N. Koshida, A. Kojima, T. Ohta, R. Mentek, B. Gelloz, N. Mori, and J.Shirakashi: "Electro-deposition of thin Si and Ge films based on ballistic hot electron injection" ECS Solid State Lett. 3(5) P57-P60 (2014). |
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H. Nishino, S. Yoshida, A. Kojima, N. Ikegami, N. Koshida, S. Tanaka, M. Esashi: "DEVELOPMENT OF MEMS PIERCE-TYPE NANOCRYSTALLINE SI ELECTRON-EMITTER ARRAY FOR MASSIVELY PARALLEL ELECTRON BEAM DIRECT WRITING" Proc. 27th IEEE Int. Conf. on MEMS (San Francisco, USA. January 26-30, 2014) 467-470. |
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N. Ikegami, N. Koshida, A. Kojima, H. Ohyi, T. Yoshida, and M. Esashi: "Active-matrix nanocrystalline Si electron emitter array with a function of electronic aberration correction for massively parallel electron beam direct-write lithography: electron emission and pattern transfer characteristics" J. Vac. Sci. & Tech. B 31 06F703/1-8 (2013) |
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N. Koshida, N. Ikegami, A. Kojima, R. Mentek, and B. Gelloz: "Ballistic Electron Effects in Nanosilicon and Their Applications (Invited)" ECS Transactions 53(4) 95-102 (2013). |
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T. Ohta, B. Gelloz, and N. Koshida: "Liquid phase deposition of thin Si films by ballistic electro-reduction" Appl. Phys. Lett. 102 022107 (2013). |
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T. Ohta, R. Mentek, B. Gelloz, N. Mori, and N. Koshida: "Liquid-phase deposition of thin Si and Ｇe films based on ballistic electro-reduction" ECS Transactions - Honolulu, 50(9), "SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices", 691-698 (2012). |
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N. Koshida, T. Ohta, and B. Gelloz: "Ballistic Electron Emission from Nanosilicon Diode and its Application to Ultra-Thin Film Deposition of Silicon and Germanium (Invited)" ECS Transactions 45(5), Nanoscale Luminescent Materials 2, 221-228 (2012). |
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N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida: "Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array" Jpn. Appl. Phys. 51, 04DJ01 (2012). |
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T. Ohta, B. Gelloz, and N. Koshida: " Multilayered thin metal films deposition by sequential operation of nanosilicon electron emitter in metal-salt solution" Jpn. J. Appl. Phys. 50 06GG03/1-4 (2011). |
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N. Mori, H. Minari, S. Uno, H. Mizuta, and
N. Koshida: " Theory of quasi-ballistic transport through nanocrystalline silicon dots" Appl. Phys. Lett. 98 062104 (2011). |
| T. Ohta, B. Gelloz, and N. Koshida: " Counter-electrode-free thin Cu film deposition based on ballistic electron injection into CuSO4 solution from nanosilicon emitter" Jpn. J. Appl. Phys. STAP, 50 010104/1-4 (2011). |
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T. Ohta, B. Gelloz, N. Koshida: " Thin Cu film deposition by operation of nanosilicon ballistic electron emitter in solution" Electrochemical and Solid-State Letters13(10) D73-D75 (2010). |
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T. Nakada, T. Sato, Y. Matsuba, K. Sakemura,Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara,
M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida: " 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device" J. Vac. Sci. Technol. B 28 C2D11-15 (2010). |
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Y. Hirano, M. Nanba, N. Egami, S. Yamazaki and N. Koshida: " Development of dry-processed silicon nano-dot planar cold cathode and its electron emission properties" J. Vac. Sci. Technol. B 28 C2B6-C2810 (2010). |
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T. Ichihara, T. Hatai and N. Koshida: " Direct excitation of xenon by ballistic electrons emitted from nanocrystalline silicon planar cathode and vacuum-ultraviolet light emission" J. Soc. Information Display 18/3 223-227 (2010). |
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T. Ichihara, T. Hatai, and N. Koshida: "Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode" J. Vac. Sci. Technol. B 28 772-774 (2009). |
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T. Nakada, T. Sato, Y. Matsuba, R. Tanaka, K. Sakemura, N. Negishi,
Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka,
N. Egami, and N. Koshida: "Enhanced output current density of an active-matrix high-efficiency electron emission device (HEED) array with 13.75 μm pixels" J. Vac. Sci. Technol. B 28 735-739 (2009). |
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A Kojima, H. Ohyi, N. Koshida: "Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source: Proc. SPIE, 7271 72712N (2009), Conference on Alternative Lithographic Technologies (Tuesday 24 February 2009, San Jose, CA, USA). |
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D. Sakai, C. Oshima, T. Ohta, and N. Koshida: "Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer" J. Vac. Sci. Technol. B 26 1782- 1786 (2008). |
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A Kojima, H. Ohyi, N. Koshida: "Sub-30 nm Parallel EB Lithography using Nano-Si Planar Ballistic Electron Emitter" J. Vac. Sci. Technol. B, (2008) in press |
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T. Ohta, B. Gelloz, and N Koshida: "Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode" J. Vac. Sci. Technol. B 26 716 -719 (2008). |
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N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, and K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, and N. Egami, and N. Koshida: "Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device" J. Vac. Sci. Technol. B 26 711-715 (2008). |
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Y. Okuda, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba*, S. Okazaki, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida: "Low Voltage and High Speed Operation of 640X480 Pixel Ac-tive-matrix HEED (High-efficiency Electron Emission Device) Array for HARP Image Sensor" Proc. Int. Display Workshop (5-8 December, 2007, Sapporo) FED1-3/6. |
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N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida: "Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing" J. Vac. Sci. Technol. B 25 661-666 (2007). |
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N. Koshida, T. Ohta, and B.Gelloz: "Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect" Appl. Phys. Lett. 90 163505-07 (2007). |
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M. Namba, K. Miyakawa, T. Watabe, S. Okabe, K. Tanioka, N. Egami, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, A. Kobayashi, K. Ogusu, N. Koshida: "1-inch 256☓192 Pixel HARP Image Sensor with Active-matrix HEED" J. Inst. Image and TV Eng. 61 387-392 (2007)(In Japanese). |
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T. Ohta, A. Kojima, and N. Koshida: "Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience" J. Vac. Sci. Technol. B 25 524-527 (2007). |
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N. Negishi, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida: "Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing." J. Vac. Sci. Technol. B 24 1021-1025(2006). |
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T. Ohta, A. Kojima, H. Hirakawa, T. Iwamatsu, and N. Koshida: "Operation of nanocrystalline silicon ballistic emitter in low vacuum and atmospheric pressures." J. Vac. Sci. Technol. B 23 2336-2339 (2005). |
| Akira Kojima and Nobuyoshi Koshida, Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer, Appl. Phys. Lett. 86, 022102 (2005). |
| S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta, Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides, J. Appl. Phys. 97, 113506-11 (2005). |
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S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta: "Theoretical investigation of electron-phonon interaction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers". Phys. Rev. B72 035337-47 (2005). |
| Y. Tsuchiya, T. Nakatsukasa, H. Mizuta1, S. Oda, A. Kojima, and N. Koshida, Quasiballistic electron emission from planarized nanocrystalline-Si Cold Cathode, Mater. Res. Soc. Symp. Proc. 832 189-194 (2005). |
| T. Komoda, T. Ichihara, Y. Honda, T. Hatai, T. Baba, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, and N. Koshida, Fabrication of a 7.6-in-diagonal prototype ballistic electron surface-emitting display on a glass substrate, Journal of the Society for Information Display, 12, 29-35 (2004). |
| Tsutomu Ichihara, Yoshiaki Honda, Toru Baba, Takuya Komoda, and Nobuyoshi Koshida, Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes, J. Vac. Sci. Technol. B 22, 1784 (2004). |
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T. Ichihara, T. Baba, T. Komoda and N. Koshida: "Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device" J. Vac. Sci. Technol. B, 22 (3) (2004) 1372- 1376. |
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K. Sakemura, N. Negishi, T. Yamada, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara and N. Koshida: "Development of an advanced high efficiency electro-emission device" J. Vac. Sci. Technol. B, 22 (3) (2004) 1367-1371. 1371. |
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Y. Nakajima, T. Uchida, H. Toyama, A. Kojima, B. Gelloz and N. Koshida: "A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation" Jpn. J. Appl. Phys, 43(2004) 2076-2079. |
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T. Ichihara, T.Hatai, K. Aizawa, T. Komoda, A. Kojima, and N. Koshida: "Key role of nanocrystalline feature in porous polycrystalline silicon diodes for efficient ballistic electron emission" J. Vac. Sci. Technol. B, 22 (1) (2004) 57-59. |
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S. Uno, K. Nakazato, S. Yamaguchi,
A. Kojima,
N. Koshida, and H. Mizuta: "New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si" IEEE Trans. Nanotechnology 3(4) (2004) 301-307. |
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A. Kojima, and N. Koshida: "An Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon" Jpn. J. Appl. Phys. 42(2003) 2395-2398. |
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Y. Nakajima,
H. Toyama,
T. Uchida,
A. Kojima, and N. Koshida: "Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon device Formed on a p-Type Substrate" Jpn. J. Appl. Phys. 42(2003) 2412-2414. |
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Y. Nakajima,
A. Kojima, and N. Koshida: "Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device" Appl. Phys. Letters 81(2002) 2472-2474. |
|
T. Komoda,
Y. Honda,
T. Ichihara,
T. Hatai,
Y. Takegawa,
Y. Watabe, and K. Aizawa: "Development of a Low Temperature Process of Ballistic Electron Surface-Emitting Display (BSD) on a Glass Substrate" Society for Information Display 2002 Int. Symp. Digest of Technical Papers, 33, No.2, (SID, San Jose, 2002) 1128-1131 |
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N. Koshida: "Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited)" Mater. Sci. & Eng. C724 (2002) 285-289 . |
|
T. Ichihara,
Y. Honda,
K. Aizawa
T. Komoda and N. Koshida: "Development of ballistic electron cold cathode by a low temperature processing of polycrystalline silicon films" J. Crystal Growth Special Issue 237-239 (2002) 1915-1919. |
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Y. Nakajima,
A. Kojima, and N. Koshida: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films" Jpn. J. Appl. Phys. 41(2002) 2707-2709. |
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X. Sheng,
A. Kojima,
T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER STRUCTURE 19; PART 1 (2001) 64-67 . |
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A. Kojima and N. Koshida: "Evidence of enlarged drift length in nanocrystalline porous silicon layers by time-of-flight measurements" Jpn. J. Appl. Phys. 40 (2001) 366-368 . |
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Y. Nakajima,
A. Kojima, and N. Koshida: "A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation" Mat. Res. Soc. Symp. Proc. 638 (2001) F4.2.1.-F4.2.6. |
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A. Kojima,
X. Sheng, and N. Koshida: "Analyses of Ballistic Electron Transport in Nanocrystalline Porous Silicon" Mat. Res. Soc. Symp. Proc. 638 (2001) F3.3.1.-F.3.3.6. |
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T. Komoda,
T. Ichihara,
Y. Honda,
K. Aizawa, and N. Koshida: "Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrare" Mat. Res. Soc. Symp. Proc. 638 (2001) F4.1.1.-F.4.1.12. |
|
T. Komoda,
Y. Honda,
T. Hatai,
Y. Watabe,
T. Ichihara,
K.Aizawa, and N. Koshida: "Fabrication of Ballistic Electron Surface-Emitting Display on Glass Substrates (Invited)" Society of Information Display, Digest of Technical Papers 32 (2001) 188-191． |
|
T. Komoda,
Y. Honda,
T. Hatai,
Y. Watabe,
T. Ichihara,
K. Aizawa,
Y. Kondo and N. Koshida : "Matrix flat-panel application of ballistic electron surface-emitting display" Society for Information Display, Digest of Technical Papers 31 (2000) 428-431. |
|
N. Koshida ,
X. Sheng and T. Komoda: "Quasiballistic Electron Emission from Porous Silicon Diodes" Appl. Surf. Sci. 146 (1999) 371-376. |
|
T. Komoda ,
X. Sheng , N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films." J. Vac. Sci. Technol. B 17(3) (1999) 1076-1079. |
|
N. Koshida ,
B. Gelloz ,
X. Sheng ,
K. Ueno and A. Kojima: "Luminescence and Related Novel Functions of Quantum-sized Nanosilicon. (in Japanese)" Technical Report of IEICE LQE99-16 (1999) 1-6. |
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X. Sheng ,
H. Koyama and N. Koshida: "Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes." J. Vac. Sci. & Technol. B 16 (1998) 793-795. |
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X. Sheng and N. Koshida: "Quasi-ballistic Stable Electron Emission from Porous Silicon Cold Cathodes" Mat. Res. Soc. Symp. Proc. 509 (1998) p.p. 193-198. |
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X. Sheng ,
T. Ozaki ,
H. Koyama and N. Koshida: "Improved cold electron emission characteristics of electroluminescent porous silicon diodes." J. Vac. Sci. & Technol. B 15 (1997) 1661-1665. |
|
X. Sheng ,
H. Koyama and N. Koshida: "Emission characteristics of porous silicon cold cathodes." Thin Solid Films 297 (1997) 314-316. |
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N. Koshida ,
T. Ozaki and H. Koyama: "Cold electron emission from electroluminescent porous silicon diodes." Jpn. J. Appl. Phys. 34 (1995) L705-L707. |
|
X. Sheng ,
T. Ozaki ,
H. Koyama and N. Koshida: "Properties of porous silicon LED as a surface-emitting cold cathode." Proc. Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 87-93. |
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Kensaku Nomoto, Akiko Hashiguchi, Akari Asaba, Masahiro Kato, Nobuyoshi
Koshida, Kazutaka Mogi, and Takefumi Kikusui, Female C57BL/6 and BALB/c
mice use different acoustic features of male ultrasonic vocalizations
for social preferences, Experimental Animals 69(3), 319-325 (2020). Published online, Feb 26, 2020, https://doi.org/10.1538/expanim.19-0119. |
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K. Nomoto, M. Ikumi, M. Otsuka, A. Asaba, M. Kato, N. Koshida, K. Mogi, T. Kikusui: "Female mice exhibit both sexual and social partner preferences for vocalizing males" Integr Zool. 13(6), 735-744 (2018). DOI: 10.1111/1749-4877.12357. |
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Kazutaka Mogi, Ayaka Takakuda, Chihiro Tsukamoto, Rumi Oyama, Shota Okabe, Nobuyoshi Koshida, Miho Nagasawa, and Takefumi Kikusui: "Mutual mother-infant recognition in mice: The role of pup ultrasonic vocalizations" Behavioral Brain Research 325, 138 (2017). DOI: 10.1016/j.bbr.2016.08.044 |
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N. Koshida: "Electronic and Acoustic Applications of Anodized Nano-crystalline Silicon" ECS Transactions 69(2), 111-116 (2015). doi: 10.1149/06902.0111ecst |
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A. Asaba, S. Okabe, M. Nagasawa, M. Kato, N. Koshida, K.a Mogi, and T. Kikusui: "Determining Ultrasonic Vocalization Preferences in Mice Using a Two-Choice Playback Test" Journal of Visualized Experiments (JoVE),b>103 e53074/1-8 (2015). doi: 10.3791/53074 |
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A. Asaba, S. Okabe, M. Nagasawa, M. Kato, N. Koshida, K. Mogi, and T. Kikusui: "Developmental social environment imprints female preference for male song in mice" PLoS One 9(2) e87186 (2014). |
|
S. Okabe, M. Nagasawa, T. Kihara, M. Kato, T. Harada, N. Koshida, K. Mogi, and T. Kikusui: "Pup odor and ultrasonic vocalizations synergistically stimulate maternal attention in mice" Behavioral Neuroscience 127 432-438 (2013). |
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N. Koshida, D. Hippo, M. Mori, H. Yanazawa, H. Shinoda, and T. Shimada: "Characteristics of thermally induced acoustic emission from nanoporous silicon device under full digital operation" Appl. Phys. Lett. 102 123504 (2013). |
|
H. Sugimoto, S. Okabe, M. Kato, N. Koshida, T. Shiroishi, K. Mogi, T. Kikusui, T. Koide: "A role for strain differences in waveforms of ultrasonic vocalizations during male–female interaction" PLoS One 6 e22093/1-10 (2011). |
|
S. Okabe, M. Nagasawa, T. Kihara, M. Kato, T. Harada, N. Koshida, K.
Mogi, and T. Kikusui: " The Effects of Social Experience and Gonadal Hormones on Retrieving Behavior of Mice and their Responses to Pup Ultrasonic Vocalizations" Zoological Science 27(10)27 790-795 (2010). |
|
N. Koshida, A. Asami, and B. Gelloz: "Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter" IEDM 2008 Technical Digest 659-662 (2008). |
|
B. Gelloz, M. Sugawara and N. Koshida: "Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters" Jpn. J. Appl. Phys. 47 3123-3126 (2008). |
|
Y. Watabe, Y. Honda, and N. Koshida: "Effect of Bi-layer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter" Jpn. J. Appl. Phys. 46 6218-6221 (2007). |
|
A. Uematsu, T. Kikusui, T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, N. Koshida, Y. Takeuchi, and Y. Mori: "Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter" Brain Research 1163 91-99(2007). |
|
Y. Watabe, Y. Honda and N. Koshida: "Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emissionn" Jpn. J. Appl. Phys. 46 2599-2602(2007). |
|
Y. Watabe, Y. Honda, and N. Koshida: "Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon" Jpn. J. Appl. Phys. 45 7240-7242 (2006). |
|
T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, T. Kikusui, and N. Koshida: "Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter." Appl. Phys. Lett. 88 043902-04(2006). |
|
Y. Watabe, Y. Honda, and N. Koshida: "The characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon device under impulse operation." Jpn. J. Appl. Phys, 45 7240-7242(2006). |
|
K. Tsubaki, T. Komoda and N. Koshida: "Acoustic emission characteristics of nanocrystalline porous silicon device driven as an ultrasonic speaker." Jpn. J. Appl. Phys, 45 3642-3644(2006). |
|
T. Kihara, T. Harada and N. Koshida: "Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters" Sensors and Actuators A: Physical 125 422-428 (2006). |
| J. Hirota, A. Kiuchi, and N. Koshida, Phased array operation of nanocrystalline porous silicon ultrasonic emitters, phys. stat. sol. (c)2 No.9, 3298-3302 (2005). |
| K. Tsubaki, H. Yamanaka, K. Kitada, T. Komoda and N. Koshida:Three-dimensional Image Sensing in Air by Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon, Jpn. J. Appl. Phys. 44 4436-4439 (2005). |
| T. Kihara, T. Harada, and N. Koshida, Precise Thermal Characterization of Confined Nanocrystalline Silicon by a 3ω Method, Jpn. J. Appl. Phys. 44 4084-4087 (2005). |
| K. Tsubaki, T. Komoda and N. Koshida: Enhancing the sound pressure of thermally induced ultrasonic emitter based on nanocrystalline porous silicon, Mater. Res. Soc. Symp. Proc. 832, 195-200 (2005). |
| A. Kiuchi, B. Gelloz, A. Kojima, and N. Koshida: Possible operation of periodically layered nanocrystalline porous silicon as an acoustic band crystal device, Mater. Res. Soc. Symp. Proc. 832, 207-212 (2005). |
| B. Gelloz, T. Kanda, T. Uchida, M. Niibe,A. Kojima and N. Koshida: Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes, Jpn. J. Appl. Phys, 44, 2676-2679 (2005). |
|
T. Kihara, T. Harada, J. Hirota and N. Koshida: "Ultrasound Emisson Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer" Jpn. J. Appl. Phys., 43 No.5B (2004) 2973-2975. |
|
J. Hirota, H. Shinoda and N. Koshida: "Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon" Jpn. J. Appl. Phys, 43(2004) 2080-2082. |
|
K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "Wire-Free Tactile Sensing Element based on Optical Connection" Proc. 19th Sensor Symposium (2002) 433-436. |
|
T. Migita and N. Koshida: "Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon" Jpn. J. Appl. Phys. 41 (2002) 2588-2590. |
|
N. Asamura,
U. K. Saman Keerthi,
T. Migita,
N. Koshida, and H. Shinoda: "Intensifying Thermally Induced Ultrasound Emission" Proc. 19th Sensor Symposium (IEEJ, Tokyo, 2002) in press |
|
N. Koshida: "Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited)" Mater. Sci. & Eng. C724 (2002) 285-289 . |
|
N. Koshida ,
T. Nakajima,
M. Yoshiyama ,
K. Ueno ,
T. Nakagawa and H. Shinoda: "Ultrasound Emission from Porous Silicon: Efficient Thermo-acoustic Function as a Depleted Nanocrystalline System" Mat. Res. Soc. Symp. Proc. 536 (1999) p.p. 105-110. |
|
H. Shinoda ,
T. Nakajima ,
K. Ueno & N. Koshida: "Thermally induced ultrasonic emission from porous silicon." Nature 400 (1999) 853-855. |
|
B. Gelloz, K. Murata, T. Ohta, M. Ghulinyan: "Lorenzo Pavesi, D. J. Lockwood, and Nobuyoshi Koshida, Stabilization of Porous Silicon Free-Standing Coupled Optical Microcavities by Surface Chemical Modification" ECS Trans. 16 211-220 (2008). |
|
K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "Wire-Free Tactile Sensing Element based on Optical Connection", Proc. 19th Sensor Symposium (2002) (in press). |
|
Y. Toriumi,
M. Takahashi, and N. Koshida: "A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection" Mat. Res. Soc. Proc. 638 (2001) F.8.3.1-F.8.3.6. |
|
M. Takahashi,
Y. Toriumi,
T. Matsumoto,
Y. Masumoto and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators." Appl. Phys. Lett. 76 (2000) 1990-1992. |
|
M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides." J. Appl. Phys. 86(9) (1999) 5274-5278. |
|
M. Takahashi,
Y. Toriumi,
T. Matsumoto,
Y. Masumoto and N. Koshida: "Nonlinear refractive index change in porous silicon Fabry-Perot resonators." Proc. Int. ECS Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999.10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 35-42. |
|
M. Takahashi,
M. Araki and N. Koshida: "Buried Optical Waveguide of Porous Silicon" Jpn. J. Appl. Phys 37 (1998) L1017-L1019. |
|
M. Araki ,
M. Takahashi ,
H. Koyama and N. Koshida: "Performances of Porous Silicon Optical Waveguides." Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 107-112. |
|
T. Matsumoto ,
Y. Masumoto ,
S. Nakashima ,
H. Mimura and N. Koshida: "Coupling effect of surface vibration and quantum confinement carriers in porous silicon." Appl. Surf. Sci. 113/114 (1997) L1089-L1091. |
|
M. Araki ,
H. Koyama and N . Koshida: "Functional properties of luminescent porous silicon as a component of optoelectronic integration." Superlattices and Microstructures 22 (1997) 365-370. |
|
M. Araki ,
H. Koyama and N. Koshida: "Fabrication and fundamental properties of an edge-emitting device with step-index porous silicon waveguide." Appl. Phys. Lett. 68(21) (1996) 2999-3000. |
|
M. Araki ,
H. Koyama and N. Koshida: "Controlled electroluminescence of porous silicon diodes with a vertical optical cavity." Appl. Phys. Lett. 52 (1996) 2956-2958. |
|
M. Araki ,
H. Koyama and N. Koshida: "Precisely tuned emission from porous silicon vertical optical cavity in the visible region." J. Appl. Phys. 80 (1996) 4841-4844. |
|
M. Araki ,
H. Koyama and N. Koshida: "Optical Cavity Based on Porous Silicon Superlattice Technology." Jpn. J. Appl. Phys. 35(2) (1996) 1041-1044. |
|
T. Matsumoto ,
M. Daimon ,
H. Mimura ,
Y. Kanemitsu and N. Koshida: "Optically induced absorption in porous silicon and its application to logic gates." J. Electrochem Soc. 142 (1995) 3528-3533. |
|
N. Koshida ,
H. Mizuno ,
H. Koyama and G. J. Collins: "Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts." Jpn. J. Appl. Phys. 34(Suppl. 34-1) (1995) 92-94. |
|
M. Araki ,
H. Koyama and N. Koshida: "Precisely tuned optical cavity using porous silicon superlattice structures." Proc Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 139-145. |
|
N. Koshida ,
H. Koyama ,
Y. Yamamoto and G. Collins: "Visible electroluminescence from porous silicon diodes with an electropolymerized contact." Appl. Phys. Lett. 63(19) (1993) 2655-2657. |
| Haruki Zayasu, Takahiko Kawaguchi, Hiroki Nakane, Nobuyoshi Koshida, Kazuo Shinozaki, Hisao Suzuki, Naonori Sakamoto, and Naoki Wakiya, Preparation and characterization of epitaxially grown YSZ thin films on porous silicon substrates for SOFC applications", Journal of the Ceramic Society of Japan 130 [7], 464-470 (2022). http://doi.org/10.2109/jcersj2.21178. |
| Ryoko Yamamoto, Akira Kojima, Nobuyoshi Koshida, Isao Morohashi, Kazuhiko Hirakawa, and Ya Zhang, Thermal and optical properties of porous nanomesh structures for sensitive terahertz bolometric detection, Sensors 22(14), 5109 (2022). https://doi.org/10.3390/s22145109. |
|
Hiroki Ishigami, Takahiko Kawaguchi, Naonori Sakamoto, Shenglei Che,
Nobuyoshi Koshida, Kazuo Shinozaki, Hisao Suzuki, and Naoki Wakiya,
Preparation of ZnFe2O4 thin film by Dynamic Aurora PLD on Si and porous
Si and their gas sensing property for liquefied petroleum gas, J. of the
Ceramic Soc. of Japan 128[8], 457-463 (2020). doi: 10.2109/jcersj2.20010. |
|
K. Rumpf, P. Granitzer, N. Koshida, P. Poelt, H. Michor: "Morphology Controlled Magnetic Interactions in Metal Embedded Porous Silicon Nanostructures" ECS J. of Solid State Sci. and Tech. 4(5), N41-N43 (2015). doi: 10.1149/2.0221505jss |
|
K. Rumpf, P. Granitzer, N. Koshida, P. Poelt, and M. Reissner: "Study of the Magnetic Interactions Between Metal Nanodeposits in Porous Silicon" IEEE Trans. on Magnetics, 50(11), 2303203 (2014). |
|
P. Granitzer, K. Rumpf, N. Koshida, P. Poelt, and H. Michor: "Electrodeposited metal nanotube/nanowire arrays in mesoporous silicon and their morphology dependent magnetic properties" ECS Transactions. 58(32), 139-144 (2014). |
|
K. Rumpf, P. Granitzer, N. Koshida, P. Poelt, M. Reissner: "Magnetic interactions between metal nanostructures within porous silicon" Nano Research Lett. 9, 412 (2014). |
|
P. Granitzer, K. Rumpf, T. Ohta, N. Koshida, M. Reissner, P. Poelt: "Enhanced magnetic anisotropy of Ni nanowire arrays fabricated on nano-structured silicon templates" Appl. Phys. Lett. 101 033110 (2012). |
|
R. Mentek, B. Gelloz, N.and Koshida: " Fabrication and Optical Characterization of Self-standing Wide-gap Nanocrystalline Silicon Layers" Jpn. J. Appl. Phys. 49 04DG22-1-04DG22-3 (2010). |
|
D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshid, and
Shunri Oda: " Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method" Materials Chemistry and Physics 116(1) 107-111 (2009). |
|
B. Gelloz, M. Masunaga, T. Shirasawa, R. Mentek, T. Ohta, and N. Koshida: "Enhanced Controllability of Periodic Silicon Nanostructures by Magnetic Field Anodization" ECS Trans. 16 195-200 (2008). |
|
D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda: "Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization" Jpn. J. Appl. Phys. 47, 7398-7402 (2008). |
|
D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda: "New design principle and Fabrication Process of Silicon 3-dimensional Photonic Crystal Structures" Jpn. J. Appl. Phys. 46 633-637 (2007). |
|
T. Nakagawa,
H. Sugiyama and N. Koshida: "Fabrication of Periodic Si Nanostructure by Controlled Anodization" Jpn. J. Appl. Phys. 37(Part 1, No. 12B) (1998) 7186-7189. |
|
T. Matsumoto ,
Y. Masumoto ,
S. Nakashima ,
H. Mimura and N. Koshida: "Coupling effect of surface vibration and quantum confinement carriers in porous silicon." Appl. Surf. Sci. 113/114 (1997) L1089-L1091. |
|
T. Nakagawa,
H. Koyama and N. Koshida: "Effects of External Magnetic Field on the Formation and Optical Properties of Luminescent Porous Silicon." Proc. ECS Int. Symp. on Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, Montreal, Canada 1997 (ECS, Pennington, 1997) p.p. 253-241. |
|
T. Nakagawa ,
H. Koyama and N. Koshida: "Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization." Appl. Phys. Lett. 69 (1996) 3206-3208. |
|
H. Tanino ,
A. Kuprin ,
Y. Deai and N. Koshida: "Raman study of free-standing porous silicon." Phys. Rev. B 52 (1996) 1937-1947. |
|
N. Koshida,
H. Koyama, Y. Suda et al.: "Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses." Appl. Phys. Lett. 63(20) (1993) 2774-2776. |
|
Y. Uchida ,
N. Koshida and H. Koyama: "Paramagnetic center in porous silicon : A dangling bond with C3V symmetry." Appl. Phys. Lett. 63(7) (1993) 961-963. |
|
N. Koshida and H. Koyama: "Optoelecronic characterizations of porous silicon (invited)." MRS Symp. Proc. 283 (1993) p.p. 337-342. |
|
N. Koshida: Optoelectronic Properties of Porous Silicon., Optical Properties of Low Dimensional Silicon Structures, ed. D. Bensahel (Kluwer Acad., Dordrecht, 1993) p.p. 133-138. |
|
P. Granitzer, K. Rumpf, T. Ohta, N. Koshida, P. Poelt, and M. Reissner: "Porous silicon/Ni composites of high coercivity due to magnetic field assisted etching" Nanoscale Research Letters 7, 384 (2012). |
|
N. Ikegami, T. Yoshida, A. Kojima, H. Ohyi, N. Koshida, and M. Esashi: "Active-Matrix nc-Si Electron Emitter Array for Massively Parallel Direct Write Electron Beam System" Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3) (2012) (Accepted for publication). |
|
A. Kojima, H. Ohyi, T. Ohta, and N. Koshida: "Fast and Large Field Electron Beam exposure by CSEL" Proc. SPIE, Alternative Lithographic Technorogies III, 7970, 7970 R/1-10 /(2011), San Jose, US, 1-3 March, 2011. |
|
A Kojima, H. Ohyi, N. Koshida: "Sub-30 nm Parallel EB Lithography using Nano-Si Planar Ballistic Electron Emitter" J. Vac. Sci. Technol. B, (2008) in press. |
|
M. Hashimoto,
T. Koreeda and N. Koshida: "Application of dual-functional MoO3/WO3 bilayer resists to focused ion beam nanolithography" J. Vac. Sci. & Technol. B 16(5) (1998) 2767-2771. |
|
M. Hashimoto ,
S. Watanuki and N. Koshida M. Komuro and N. Atoda: "Dual function of thin MoO3 and WO3 films as negative and positive resists for focused ion beam lithography." Jpn. J. Appl. Phys. 35 (1996) 3665-3669. |
|
T. Ikeda ,
M. Baba and N. Koshida: "Transition metal oxide resists for electron-beam and focused-ion-beam lithography." J. Photopolym. Sci. & Technol. 7(3) (1994) 585-594. |
|
N. Koshida ,
S. Watanuki ,
K. Yoshida et al.: "Electrical properties of nanometer-width refractory metal line fabricated by focused ion beam and oxide resists." Jpn. J. Appl. Phys. 3 (1992) 4483-4486. |
|
N. Koshida, Y. Ichinose, K. Ohtaka, M. Komuro and N. Atoda: "Microlithographic behavior of transition metal oxide resists exposed to focused ion beam." J. Vac. Sci. Technol. B 8 1093-1096 (1990). |
| N. Koshida, H. Wachi, K. Yoshida, M. Komuro and N. Atoda: "Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists", Jpn. J. Appl. Phys. 29(10) (1990) 2299-2302. |
|
Y. Hirano, S. Yamazaki, and N,i Koshida: "Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers" Jpn. J. Appl. Phys. 47 3095-3098 (2008). |
|
H. Yoshimura, T. Sakaguchi, and N. Koshida: "Development of Flexible Electrochromic Device with Thin-Film Configuration" Jpn. J. Appl. Phys. 46 2458-2461(2007). |
2006年
|
H. Yoshimura and N. Koshida: "Quick response observed in solid-state electrochromic device with an interfacial barrier structure" Jpn. J. Appl. Phys. 45 3479-3481 (2006). |
|
H. Yoshimura and N. Koshida: "Fast electrochromic effect obtained from solid-state inorganic thin film configuration with a carrier accumulation structure." Appl. Phys. Lett. 88 (2006) (accepted for publication). |
|
H. Yoshimura and N. Koshida: "Quick response observed in solid-state electrochromic device with an interfacial barrier structure." Jpn. J. Appl. Phys, 45 3479-3481(2006). |
|
M. Nagasu and N. Koshida: "Photointercalation characteristics of thin WO3 films." J. Appl. Phys. 71 (1992) 398-402. |
|
M. Nagasu and N. Koshida: "Photointercalation effect of thin WO3 films." Appl. Phys. Lett. 57 1325-1326 (1990). |
|
M. Nagasu and N. Koshida: "Photointercalation induced change in optical and electrical properties of thin WO3films", J. TV Engrs. Jpn. 44, 1758-1761 (1990) [in Japanese]. |
|
N. Koshida: "Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited)" Mater. Sci. & Eng. C724 (2002) 285-289 . |
|
N. Koshida and N. Hirayama: "Ion implantation induced change in fibrillar morphology of polyacetylene films." Nucl. Instrum. Meth. B 59/60 (1991) 1292-1294. |
|
N. Koshida and H. Yabumoto: "Effects of ion implantation on the photoelectrochemical properties of TiO2." Nucl. Instrum. Meth. B 59/60 (1991) 1236-1239. |
|
N. Koshida and K. Saito: "Work function of a high-Tc superconductor,YBa2Cu3O7." Jpn. J. Appl. Phys. 29 L1635-L1637 (1990). |
(Reviews)
|
Nobuyoshi Koshida: "More silicon-deep in the nanovalley-" Materials Science in Semiconductor Processing 162, (2023) 107477. DOI: 10.1016/j.mssp.2023.107477 |
|
N. Koshida and T. Nakamura: "Emerging Functions of Nanostructured Porous Silicon –With a focus on the emissive properties of photons, electrons, and ultrasound, Frontiers in Chemistry" Advances in Porous Semiconductors Science and Technology 7, 273 (2019) (in press). DOI: 10.3389/fchem.2019.00273 |
|
越田 信義: "ナノシリコンからの弾道電子放出を用いた還元型水素生成" 水素エネルギーシステム 44 No.1, 41-46 (2019). |
|
江刺正喜、池上尚克、小島明、宮口裕、西野仁、越田信義、吉田孝、室山真 徳、吉田慎哉: "超並列電子線描画装置の開発" 金属 83(9) 7-12 (2013). |
|
N. Koshida, T. Ohta, B. Gelloz, and A. Kojima: ”Ballistic electron emission from quantum-sized nanosilicon diode and its applications” Current Opinion in Solid State and Materials Science, 15 183–187 (2011). |
|
N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz: ”Functional Device Applications of Nanosilicon” Key Engineering Materials, 470 20-16 (2011). |
|
越田信義: "ナノ結晶シリコン電子源の新しい応用展開" 応用物理 78 329-332 (2009)(in Japanese). |
|
越田信義、太田敢行、B. Gelloz: "溶液中でも動作する電子源電極の開発と水素発生" 燃料電池 7 No.3 88-92(2008). |
|
越田信義、B. Gelloz: "ナノクリスタルシリコン発光デバイス" オプトロニクス 311 127-132 (2007/11). |
|
越田 信義: "ナノシリコンによる発光・弾道電子・音響デバイスの開発". (財)日本半導体製造装置協会会報SEAJ Journal No.109, 52-53 (2007)(in Japanese). |
|
相澤 浩一, 菰田 卓哉, 越田 信義: "ナノ結晶シリコンフィールドエミッションディスプレイデバイス". 真空 49, 757-762 (2006)(in Japanese). |
|
N. Koshida: "Functions and Applications of Quantum-Sized Silicon". Parity 19 14-19 (2004) . |
|
N. Koshida: "2.映像・音響技術におけるナノテクノロジー". 映像情報メディア学会誌, 58 No.9 (2004) 1196-1200（in Japanese). |
|
N. Koshida: "光・電子・音を出すシリコンナノ粒子 －量子サイズ化によるシリコンテクノロジーの展開－." 学術月報, 57, 176-180(2004)（in Japanese). |
|
N. Koshida, A. Kojima, Y. Nakajima, T. Ichihara, Y. Watabe, T. Komoda: "Application of Nanocrystalline Silicon Ballistic Electron Emitter to Flat Panel Display Devices." Electrochem. Soc. Interface, Summer 2003, 54-58. |
|
N. Koshida and N. Matsumoto: "Fabrication and Quantum Properties of Nanostructured Silicon." Materials Science and Engineering R 40 169-205 (2003). |
|
N. Koshida: "Luminescence and related novel functions of nanosilicon. （ナノシリコンの発光と新機能）" Oyobuturi, 69, 792-796 (2000) (in Japanese). |
|
N. Koshida and B. Gelloz: "Wet and dry porous silicon" Current Opinion in Colloid and Interface Science 4 No. 4, 309-313 (1999). |
|
N. Koshida:
"Light Emission from Porus Silicon ―Beyond the Indirect/Direct Transition Regime ― （ポーラスシリコンの発光―間接・直接遷移の枠を超えて―）" Oyobuturi, 66 437-443 (1997) (in Japanese) (Rev.). |
|
N. Koshida: "Towards Silicon-Based Optoelectronic Integration" Transactions- Institute of Electrical Engineers of Japan 116 No. 2, 99-103 (1996). |
|
N. Koshida: "Introduction of Research Projects.（研究グループ紹介）" Trans. IEE jpn.., 115-A 1162 (1995) (in Japanese). |
|
N. Koshida: "Formation of Porous Silicon by Anadization and Its Visible Luminescent Properties., （陽極酸化によるポーラスSiの形成と可視発光）" Rep. 23rd Comm. Microfabrication, Inst. Precision Technol. jpn.., 8-12 (1994) (in Japanese). |
|
N. Koshida: "Electronic Structure and Luminescence of Porous Silicon., （多孔質シリコンの電子構造と発光）" Radiation Chemistry 57, 59 (1994) (in Japanese). |
|
L. T. Canham and N. Koshida: "Silicon-Based Materials for Light Emission" Proc. Of 7th Int. Symp. On Silicon Mat. Sci & Technol, San Francisco, 457-459 (1994), Electrochem. Soc., Pennington, (1994). |
|
N. Koshida and H. Koyama: "Luminescence from Silicon" J.- Institute Electronics Information and Comm. Engineers 76, No. 5, 498 (1993). |
|
N. Koshida,
H. Koyama, and Y. Suda: "Porous Silicon.（ポーラスシリコン）" J. Surf. Sci. Soc. jpn.. 14, 85-89 (1993) (in Japanese). |
|
N. Koshida: "Visible Luminescence from Pourous Silicon" Mol. Cryst. Liq. Sci. Technol. Sec. B: Nonlinear Optics 4, 143-154(1993). |
|
N. Koshida and H. Koyama: "Luminescene from Silicon., （シリコンの発光現象）", J. IEICE jpn.. 76, 498-501(1993). |
|
H. Koyama and N. Koshida: "Promising New Light Sources－Optoelectronic Materials with Ultrafine Structures－Porous Silicon., （期待される新光源－超微細構造光材料－：多孔質シリコン）" Optronics 139, 70-75 (1993) (in Japanese). |
|
N. Koshida: "Material Properties of Porous Silicon., （多孔質シリコンの材料物性）" Report of Optelectron. Indus. and Tech. Develop. Assoc. ⅩⅢ “Optoelectronic Materials with Ultrafine Structures”, 8-11, 27-45 (1993). |
|
N. Koshida and H. Koyama: "Visible light emission from porous silicon"(invited), Optoelectronics 7(1), 103-115 (1992). |
|
N. Koshida: "Visible Luminescence from Porous Silicon., （多孔質シリコンの可視光ルミネッセンス）" KOTAI BUTURI 27, 152-158 (1992) (in Japanese). |
|
N. Koshida and H. Koyama: "Visible Luminescene from Porous Silicon., （多孔質シリコンからの可視発光）" Microoptics News 10(1), 45-50 (1992) (in Japanese). |
|
H. Koyama and N. Koshida: "Structure and Visible Luminescence of Porous Silicon., （多孔質シリコンの構造と可視発光）," J. Surf. Sci. Soc. Jpn. 13, 402-407 81992) (in Japanese). |
|
N. Koshida and H. Koyama: "Visible Luminescence of Porous Silicon., （多孔質シリコンの可視発光）" Oyo Buturi 61, 805-808 (1992) (in Japanese). |
|
N. Koshida: "Luminescence from Porous Silicon., （多孔質シリコンの発光）" Chemical Industry 43, 476-478 (1992) (in Japanese). |
|
N. Koshida and H. Koyama: "Light Emission Mechanism of Luminescent Silicon: Complementary Effects of Band Modification and Surface Bound States" Oyobuturi 61, 1269-1271 (1992) (in Japanese). |
|
N. Koshida: "Luminescence of Porous Silicon and Its Potential Applicability to Display Devices.. （ポーラスシリコンの発光とディスプレイ機器への応用の可能性）", BREAK THROUGH 77, 24-26 (1992) (in Japanese). |
|
N. Koshida: "A Measurement Technique of the Spatial Impurity Distribution in Semiconductors by Laser Prove., （レーザプローブ法による半導体不純物濃度分布の測定）" Function & Materials 10, March, 42-48 (1990) (in Japanese). |
|
N. Koshida and N. Hirayama: "Ion Implantation Studies of Organic Polymers., （有機高分子材料へのイオン注入）", HYOMEN KAGAKU 12, 72-78 (1991) (in Japanese). |
|
N. Koshida: "Applications of Photointercalation Effects to Image Devices. （光インターカレーション効果とその画像デバイスへの応用）" GAZOU LABO 2,39-42 (1991) (in Japanese). |
|
N. Koshida: "Image Pickup Tubes for Invisible Optical Infoemation., (不可視光用撮像管)" Tech. Rep. IEE Japan Ⅱ-274, “Recent Studies on High-Resolution Image Dsevices”, 9-11 (1989) (in Japanese). |
|
N. Koshida: "Semiconductor Electrodes of Photoelectrochemical Solar Cells. （光電気化学太陽電池の半導体電極）" Oyo Buturi 56(2), 194-198 (1987) (in Japanese). |
|
N. Koshida: "Technical Approaches to Large-Area Liquid Crystal Display Devices., （液晶表示素子の大型化）" Tech. Rep. Inst. Engrs. Jpn.,Ⅱ-205, 9-12 (1985) (in Japanese). |
|
N. Koshida: "Output Electron Energy Distribution of Microchannel Plates.－Effects of Output Electrode Structure－, .(MCPの出力電子エネルギー分布－出力端電極構造の影響－)" Tech. Rep. Inst. Electron. Comm. Engrs. Jpn., ED85-30～42, 7-12 (1985)(in Japanese). |
(Books)
| N. Koshida, Thermal Properties of Nanoporous Silicon Materials, Chapter 2 (p. 27-49), in “Porous Silicon for Biomedical Applications”, 2nd Edition, Ed. Hélder A. Santos (Elsevier, 2021), 820 pages. |
|
江刺正喜・宮口裕・小島明・池上尚克・越田信義・菅田正徳・大井英之: 『超並列電子ビーム描画装置の開発－集積回路のディジタルファブリケーションを目指して－』、東北大学出版会、June 6, 2018, 228 pages． 第2章 2.1節 “電子ビームの制御”，2.2節 “電子ビームの集束と電子レンズ”，第3章 3.2節 “ナノクリスタルシリコン(nc-Si)電子源”，第4章 4.6節 “等倍露光実験”，4.7節 “マルチカラム化”(pp. 19-71,106-120,187-190)． |
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N. Koshida: "Thermal Properties of Porous Silicon" in “Handbook of Porous Silicon”, Part II, ed. Leigh Canham (Springer, 2015)1017 pages (pp. 207-212). doi: 10.1007/978-3-319-05744-6_20 |
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N. Koshida: "Thermal Properties of Nanoporous Silicon Materials" Part I: Fundamentals of porous silicon for biomedical applications, Chapter 3 in “Porous Silicon for Biomedical Applications” 35–51 (517 pages), ed. Hélder A. Santos (Woodhead Publ., Cambridge, UK, 2014). |
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N. Koshida and B. Gelloz: "Nanosilicon for advanced post-scaling applications" Chapter 14 in ”Nanostructured Semiconductors: from basic research to applications” 619-654 (684 pages), ed. P. Granitzer and K. Rumpf (Pan Stanford Publishing, Singapore, 2014). |
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越田信義・小山英樹: "ナノポーラスシリコンとそのデバイス" 「異種機能デバ イス集積化技術の基礎と応用－ＭＥＭS、ＮＥＭＳ、センサ、ＣＭＯSＬＳＩの融 合－」第７章、47-57 (279 pages)、 監修：益一哉・年吉洋・町田克之 （シーエムシー出版, 2012) |
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N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz: "Photonic, Electronic, and Acoustic Applications of Nanosilicon (Invited)" Book Chapter in "Physics, Chemistry and Application of Nanostructures" ed. V E Borisenko et al (World Sci. Pub., 2011) 11-18. |
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越田信義(監修）: "ナノシリコンの最新技術と応用展開" （シーエムシー出版, 2010） 245 (in Japanese). |
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N. Koshida (Ed.): "Device Applications of Silicon Nanocrystals and Nanostructures, A series of Nanostructure Science and Technology", (Springer, New York, 2009) 348. |
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N. Koshida: "Luminescence and related properties of nanocrystalline porous silicon, in Semiconductor Quantum Structures", Series : Landolt-bornstein: Numerical Data And Functional Relationships in Science And Technology - New Series, Vol. III-34ed. E. Kasper and C. Klingshirn (Springer-Verlag, Berlin, 2007) pp. 121-136. |
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越田信義: "ナノ蛍光体の開発と応用" ３章ナノ蛍光体の研究例 1節Siナノ蛍光体（シーエムシー、東京、2007）127-135(in Japanese). |
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越田信義: エコマテリアルハンドブック、Ⅲ部 第2章 "ナノ構造制御材料"（丸善、東京、2006）総ページ数816(in Japanese). |
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越田信義: 電子物性・材料の事典、4.4.2 "ディスプレイデバイス"（朝倉書店、東京、2006）総ページ数696(in Japanese). |
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越田信義: MEMSハンドブック、"ナノポーラスシリコン"（フロンティア出版、東京、2006）(in Japanese). |
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T. Komoda and N. Koshida: Nanocrystalline silicon emitter (BSD), in "Advances in Field Emission Display Technology", Chapt. 4, ed. By Y. Saito (CMC Publ.,Tokyo, 2004) (in Japanese). |
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B. Gelloz and N. Koshida: Silicon and porous silicon, in “The Handbook of Electroluminescent Materials” Chap. 10, edited by D.R. Vij (Institute of Physics Publishing, Bristol and Philadelphia, 2004) 393-475. |
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Edited by M. Cahay, M. Urquidi-Macdonald, S. Bandyopadhyay, P. Guo, H. Hasegawa, N. Koshida, J.P. Leburton, D.J. Lockwood, S. Seal, A. Stella: "Nanoscale Devices, Materials, and Biological Systems: Fundamentals and Applications” Electrochemical Society Symp. Proc. Vol. 2004-13 (Electrochem. Society, Pennington, USA, 2005) 662 |
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N. Koshida: Related Silicon Devices, in Funadmentals and Applications of Surface Science, III-1, Edited by Y. Iwasawa (Surface Science Society of Japan, Tokyo, 2004) 935-937 [in Japanese]. |
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B. Gelloz and N. Koshida: Electroluminescence of nanocrystalline porous silicon devices Handbook of Luminescence, Display Materials, and Devices Vol. 3, Chap. 5, Ed. H.S. Nalwa and L.S. Rohwer (American Sci. Publ., 2003) 127-156. |
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N. Koshida, Porous Silicon, in Chap. 2: Fabrication and Properties of Three-Dimensional Nanostructures, "Nanotechnology Handbook I", Ed. Y. Aoyagi (Ohm-Sha, Tokyo, 2002) (in Japanese). |
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N. Koshida: 8章3節ナノ結晶シリコンの多機能性 ”マイクロマシン” 産業技術サービスセンター, 370-379 (2002) (in Japanese). |
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Edited by P.M. Fauchet, J.M. Buriak, L.T.Canham, N. Koshida, and B.E. White, Jr.: "Microcrystalline and Nanocrystalline Semiconductors" Materials Research Society 2000 Fall Symposium Proceedings Vol.638 (MRS, Warrendale, USA, 2001) |
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N. Koshida: Microcrystalline and Nanocrystalline Semiconductors Materials Research Society (2001) . |
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Xia Sheng and N. Koshida: Developments of porous silicon surface-emitting cold cathodes for vacuum microelectronic applications “ Recent Research Developments in Vacuum Science & Technology”, Transworld Research Network, 89-111 (2001). |
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N. Koshida: 電気専門用語集「半導体・集積回路」,電気学会 (2000) (in Japanese) . |
| Edited by T. Tsurushima et al., N. Koshida“Collected Technical Terms on Semiconductors and Integrated Circuits” (Institute of Electrical Eng. of Japan, Tokyo, 2000) 424 p. (in Japanese). |
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N. Koshida: Edited by M. Cahay, S. Bandyopadhyay, D.J. Lockwood, N. Koshida, J.P. Leburton, M. Meyyappan, and T. Sakamoto: "Advanced Luminescent Materials and Quantum Confinement”, Electrochemical Society Symp. Proc. Vol. 99-22 (Electrochem. Society, Pennington, USA, 1999) pp. 504 (1999). |
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N. Koshida (Ed. L. Chanham): Dielectreic Contrast of Porus Silicon,EMIS Data Review Series No.18, “Properties of Porus Silicon” 234-237(IEE, London, 405p,1997). |
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N.Koshida (Ed. L. Chanham): Photoconductivity of Porus Silicon,EMIS Data Review Series No.18 , “Properties of Porus Silicon”,311-315(IEE, London, 405p,1997). |
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N. Koshida: "Interrelation between electrical properties and visible luminescence of porous silicon" Porous silicon science and technology, 323-328 (1995). |
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N. Koshida (Ed. D. C. Bensahel et al): "Optoelectronic Properties of Porous Silicon, Optical Properties of Low Dimensional Silicon Structures" Kiuwer Academic Publishers, 133-138 (1993). |
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N. Koshida,
O. Kubo, and T.Chikamura: "Electronic Information Devices 「電子情報デバイス」" Nissin Pub., Tokyo, 246 (1993) (in Japanese). |
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N. Koshida and H. Koyama: "Si-Based Light Emitting Devices (Next-Generation Optoelectronic Technology, 13-17) , （シリコン発光素子「次世代光テクノロジー集成」）" Optronics Co., 404, (1992) (in Japanese). |
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N. Koshida (Ed. by T. Matsunaga): "Mechanism of Vision (“Bioloelectronics & Information Science”, (視覚のしくみ（「生命情報工学」第10章）) Shokabo Pub., Tokyo, 126-145 (in Japanese). |
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N. Koshida (Ed. by S. Gonda et al.): "Ion Implantation into Organic Polymers (Ion Beam Technology, pp.231-244, 1989), （有機高分子へのイオン注入「イオンビーム応用技術」）" CMC, Tokyo, 437(1989) (in Japanese). |
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K. Sato and N. Koshida: "Applied Physics of Electronic Materials.（応用電子物性工学）" CORONA-sha, Tokyo, 250 (1989) (in Japanese). |
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N. Koshida (Ed. by T. Murakawa): "Ion Implantation into Polymers (Molecular Coating, Chap. 5, 129-140) , (ポリマー正面へのイオン注入（分子コーティング、第5章）)" Kindai Henshu-sha, Tokyo, 198 (1985) (In Jpn.). |
(Meeting Reports)
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Nobuyoshi Koshida, Akira Kojima, and Toshihiro Nakamura,
Evolutionary Applications of Functional Porous Silicon,
ECS Trans. 98(2), 29-34 (2020) doi: 10.1149/09802.0029ecst. |
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小島明・越田信義: 超並列電子ビーム描画システム、日本学術振興会、真空ナノエレクトロニクス第158委員会、第126回研究会資料（2019年3月1日、機械振興会館）p.113-125. |
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Akira Kojima, Ryutaro Suda, and Nobuyoshi Koshida: "Reduced energy-angle dispersion of output electrons from a nanocrystalline Si emitter with a monolayergraphene surface electrode" Abst. 31st International Vacuum Nanoelectronics Conference (9-13 July, Kyoto,IVNC 2018) p.38-39 (2018). DOI: 10.1109/IVNC.2018.8520089 |
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N. Koshida: "Emerging Applications of Nanostructured Porous Silicon (Invited)" Abst. ECS and SMEQ Joint International Meeting (AIMES2018), Sep.30-Oct.4, Cancun, Mexico, MA2018-02(11): 600 (2018). |
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江刺正喜・宮口裕・小島明・池上尚克・越田信義・菅田正徳・大井英之: 超並列電子ビーム描画装置、日本学術振興会 荷電粒子ビームの工業への応用 第132委員会、第232回研究会資料（2018年10月5日、東京理科大）p.16-23. |
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越田信義・小島明・池上尚克・江刺正喜: ナノクリスタルSi電子源、日本学術振興会 荷電粒子ビームの工業への応用 第132委員会、第232回研究会資料（2018年10月5日、東京理科大）p.24-31. |
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宮口裕・江刺正喜・小島明・池上尚克・越田信義・菅田正徳・大井英之: 超並列電子ビーム描画システム、日本学術振興会、荷電粒子ビームの工業への応用第132委員会、第232回研究会資料（2018年10月5日、東京理科大）p.32-39. |
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小島明・池上尚克・宮口裕・吉田孝・須田隆太郎・吉田慎哉・室山真徳・戸津健太郎・江刺正喜・越田信義: "マルチカラム超並列電子線直接描画装置のための小型電子光学系シミュレーションと電子源開発の近況"、次世代リソグラフィワークショップ NGL2017 (2017年7月18日、東京工業大学）p.65-66. |
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N. Koshida: "Sensor Applications of silicon nanostructures (Invited)" IEICE Tech. Report on Silicon Photonics, 19 July, 2011, Tokyo, 7-12 (In Japanese). |
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N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz: "Photonic, Electronic, and Acoustic Applications of Nanosilicon" Proc. NanoMeeting 2011, Physics, Chemistry and Application of Nanostructures (Invited), 27 May, 2011, Minsk, Belarus, 11-18 |
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N. Koshida, B. Gelloz, R. Mentek, H. Yoshimura, and Y. Hirano: "Properties of Quantum-sized Nanosilicon as a Functional Photonic Material (Invited)" MRS Int. Symp. on Photovoltaics and Optoelectronics from Nanoparticles (2010/04/07) San Francisco |
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B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, and N. Koshida: "Electropolymerized Poly(para-phenylene)vinylene Films onto and inside Porous Si (Invited)" ECS Transactions 28(3) 91-103 (2010). |
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A. Kojima, T. Ohta, H. Ohyi, and N. Koshida: "Surface Electron Emission Lithography System based on a planar type Si nanowire array ballistic electron source" Proc. SPIE 7637 37 (2010). |
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N. Mori, H. Minari, S. Uno, H. Mizuta, and N Koshida: "Quasi-ballistic electron transport through silicon nanocrystals" J. Phys. Conf. Ser.193 012008-012011 (2009): 16th Int. Conf. on Electron Dynamics In Semiconductors, Montpellier (2009/08) France |
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T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, and N. Koshida" "Structural and Optical Properties of Electropolymerized Poly(paraphenylene) vinylene Films on Si and Porous Si" ECS Transactions 25(9) 121-130 (2009). |
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A Kojima, H. Ohyi, N. Koshida" "Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source" Proc. SPIE 7271 72712N (2009/02/24) San Jose, CA, USA. |
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小島 明, 大井 英之, 越田 信義: "ナノシリコン面放出弾道電子源による一括EB露光―解像度解析―" 応用物理学会 (2009/04/01) (in Japanese) |
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太田 敢行, 小川修一郎, Bernard Gelloz, 越田 信義: "ナノシリコン弾道電子エミッタの溶液中動作による直接還元効果" 応用物理学会 (2009/04/01) (in Japanese) |
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Bernard Gelloz, 西川 浩太, 越田 信義: "高圧水蒸気アニール処理したナノ結晶ポーラスシリコンの青色燐光" 応用物理学会 (2009/03/31) |
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Romain Mentek, 津幡 修一、Bernard Gelloz, 兼堀 恵一、蕨迫 光紀、森 正光、嶋田 壽一、越田 信義: "新電気化学シリコンスライシング技術の開発" 応用物理学会 (2009/04/01) |
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越田 信義: "シリコン系材料の発光" 応用物理学会 (2009/04/02) |
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B. Gelloz, R. Mentek, K. Nishikawa and N. Koshida: "Controlled Blue Photoluminescence of Nanocrystalline Porous Silicon Treated by High-Pressure Water Vapor Annealing" MRS Fall Meeting (2008/12/04 ) |
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B. Gelloz, A. Asami,and N. Koshida: "Characteristics of Thermo-Acoustic Nanocrystalline Porous Silicon Ultrasound Generator as a Wide-Band Tweeter" MRS Fall Meeting (2008/12/04) |
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T. Ohta, S. Ogawa, B. Gelloz and N. Koshida: "Activity of Nanocrystalline Silicon Planar Ballistic Electron Emitter in Solutions" MRS Fall Meeting (2008/12/04) |
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B. Gelloz, T. Ohta M. Ghulinyan, L. Pavesi, D. J. Lockwood and N. Koshida: "Stabilization of Porous Silicon Free-Standing Coupled Microcavities by Surface Chemical Modification" ECS Fall Meeting (2008/10/14) |
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B. Gelloz, M. Masunaga, T. Shirasawa, R.Mentek, T. Ohta and N. Koshida: "Enhanced Controllability of Periodic Silicon Nanostructures by Magnetic Field Anodization" ECS Fall Meeting (2008/10/14) |
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N. Koshida and B. Gelloz: "Photonic, Electronic, and Acoustic Devices Based on Nanocrystalline Silicon" ECS Fall Meeting (2008/10/13) |
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吉村栄郎, 土屋良重，水田 博，越田信義: "高速薄膜エレクトロクロミック素子内部キャリア分布のシミュレーション解析" 応用物理学会 (2008/09/05) (in Japanese) |
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Bernard Gelloz，越田信義: "高圧水蒸気アニールによるナノ結晶ポーラスシリコンの青色発光" 応用物理学会 (2008/09/04) (in Japanese) |
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Romain Mentek，津端修一，増永昌弘，Bernard Gelloz，兼堀恵一，蕨迫光紀，山田宏治，嶋田壽一，越田信義: "陽極酸化によるシリコンインゴットの非接触カット" 応用物理学会 (2008/09/03)(in Japanese) |
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松葉陽平，佐藤貴伸，田中亮太，中田智成，酒村一到，根岸伸安，奥田義行，渡辺 温，吉川高正，小笠原清秀，難波正和，谷岡健吉，江上典文，越田信義
"アクティブ駆動型HEEDの開発と撮像デバイスへの応用(4)" 応用物理学会 (2008/09/02)(in Japanese) |
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太田敢行，小川修一郎，Bernard Gelloz，越田信義: "微小電子源ナノシリコン弾道電子エミッタの水溶液中動作" 応用物理学会 (2008/09/02)(in Japanese) |
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N.Koshida, B.Gelloz: "Photonic, Electronic, and Acoustic Device Applications of Nanocrystalline Silicon" ICOOPMA’08 (2008/07/21) |
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N.Koshida and B.Gelloz: "Device Application of Quantum-Sized Nanocrystalline Silicon" ICTFPM(First Intl. Conf. on Thin Films and Porous Materials) (2008/05/20) |
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太田敢行，B. ジェローズ，越田信義: "ナノシリコン弾道電子エミッタの水溶液中動作" 応用物理学会 (2008/03/27)(in Japanese) |
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柴田崇之，Bernard Gelloz， 越田信義: "ナノ結晶シリコン発光素子動作時の音波発生" 応用物理学会 (2008/03/27)(in Japanese) |
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佐藤正崇，山田岳史，Bernard Gelloz，越田信義: "ナノシリコン弾道電子励起固体面発光素子の特性" 応用物理学会 (2008/03/27)(in Japanese) |
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増永昌弘，津端修一，ジェローズベルナール，越田信義: "強磁界陽極酸化によるシリコンナノ周期構造の制御性向上" 応用物理学会 (2008/03/27)(in Japanese) |
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ジェローズベルナール，越田信義: "高圧水蒸気アニールしたナノ結晶シリコンで生じる青色発光" 応用物理学会 (2008/03/27)(in Japanese) |
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太田敢行，ジェローズベルナール，越田信義: "ナノシリコン弾道電子エミッタの水溶液中動作と水素発生" 応用物理学会 (2008/03/27)(in Japanese) |
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櫟原 勉，幡井 崇，越田信義: "ナノシリコン弾道電子源を用いたキセノン直接励起による真空紫外光発生" 応用物理学会 (2008/03/27)(in Japanese) |
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小島 明，大井英之，越田信義: "ナノシリコン弾道電子面放出素子によるSub-50 nm解像度の一括EB露光" 応用物理学会 (2008/03/27)(in Japanese) |
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筆宝大平，浦川 圭，土屋良重，水田 博，越田信義，小田俊理: "磁場印加陽極酸化法による高アスペクト比2次元フォトニック結晶形成機構" 応用物理学会 (2008/03/27)(in Japanese) |
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N. Koshida: "Porous silicon technology as a nanodevice platform" Int. Conf. On Porous Semiconductors Science and Technology (2008/03/12) |
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A. Chouket, H. Koyama, B. Gelloz, H. Elhouichet, M. Oueslati, N. Koshida: "Polarization memory in enhanced photoluminescence of porous silicon as a trace of energy transfer to embedded laser dye molecules" Int. Conf. On Porous Semiconductors Science and Technology (2008/03/12) |
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D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda: "Mechanism of one-directional nano etching in silicon using magnetic-field-assisted anodization" Int. Conf. On Porous Semiconductors Science and Technology (2008/03/12) |
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B. Gelloz and N. Koshida: "Photonic characteristics of nanocrystalline porous silicon treated by high-pressure water vapor annealing" Int. Conf. On Porous Semiconductors Science and Technology (2008/03/12) |
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越田信義: "ナノシリコンテクノロジーとその応用" 光産業技術振興協会マンスリーセミナー (2008/02/19)(in Japanese) |
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越田信義: "電子励起機能を内蔵した固体面発光素子" 科学技術振興機構新技術説明会 (2007/12/13)(in Japanese) |
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Y. Okuda et al: " Low Voltage and High Speed Operation of 640X480 Pixel Ac-tive-matrix HEED (High-efficiency Electron Emission Device) Array for HARP Image Sensor" Proc. Int. Display Workshop (2007/12/05) |
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B. Gelloz, Y. Yoshida, N. Koshida: "Light-emissive nonvolatile memory based on nanocrystalline porous Si" 2007 4th IEEE Int. Conf. on Group IV Photonics (2007/09/19) |
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Y. Hirano, S. Yamazaki and N. Koshida: "Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers" Int. Conf. on Solid State Devices and Materials (2007/09/18) |
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B. Gelloz, M. Sato and N. Koshida: "Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device" Int. Conf. on Solid State Devices and Materials (2007/09/18) |
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Koshida and B. Gelloz: "Photonic and related device applications of nano-crystalline silicon" SPIE Optics East (2007/09/12) |
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ジェローズベルナール，小山英樹，越田信義: "高圧水蒸気アニール処理したナノ結晶ポーラスシリコンにおける青・赤色発光の偏光メモリ" 応用物理学会 (2007/09/04 )(in Japanese) |
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小島 明，大井英之，越田信義: "CVD法により作製されたナノシリコン面電子放出素子の特性評価" 応用物理学会 (2007/09/04 )(in Japanese) |
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太田敢行，ジェローズベルナール，越田信義: "ナノシリコン弾道電子エミッタの水溶液中動作" 応用物理学会 (2007/09/04 )(in Japanese) |
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中田智成，佐藤貴伸，松葉陽平，田中亮太，酒村一到，根岸伸安，奥田義行，渡辺 温，吉川高正，小笠原清秀，難波正和，岡崎三郎，谷岡健吉，江上典文，越田信義: 太田敢行，ジェローズベルナール，越田信義: "アクティブ駆動型HEEDの開発と撮像デバイスへの応用" 応用物理学会 (2007/09/04 )(in Japanese) |
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筆宝大平，土屋良重，水田 博，浦川 圭，越田信義，小田俊理: "方向エッチングによるシリコン3次元フォトニック結晶の作製とフォトニックバンドギャップ効果" 応用物理学会 (2007/09/04 )(in Japanese) |
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N. Koshida and B. Gelloz: "Photonic, electronic, and acoustic devices based on nanocrystalline silicon" Int. Conf. on Optical, Optoelectronic and Photonic Mater. and Applications(2007/07/30) |
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N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, . Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, and K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, and N. Egami, and N. Koshida : "Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device" Int. Vac. Nanoelectron. Conf.(2007/07/08) |
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T. Ohta, B. Gelloz, and N. Koshida: "Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode" Int. Vac. Nanoelectron. Conf.(2007/07/08) |
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N. Koshida and B. Gelloz: "Functional Devices Based on Quantum-sized Nanosilicon" 2007 Asia-Pasific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(2007/06/25) |
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B. Gelloz, H. Koyama, and N. Koshida: "Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing" 5th Int. Conf. on Silicon Epitaxy and Heterostructures (2007/05/24) |
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越田 信義: "ナノクリスタルSi発光デバイスの展望" 応用物理学会結晶工学分科会第126回研究会 (2007/04/26) |
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N. Koshida: "Flexible electrochromic device on polymers" International Conference on Coating on Glasses and Plastics(2007/03) |
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太田敢行1，Bernard Gelloz，越田信義: "ナノシリコン弾道電子エミッタの水中動作と水素発生" 応用物理学会(2007/03/29) |
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吉村栄郎，坂口智典，越田信義: "固体薄膜エレクトロクロミック素子の開発と応用" 応用物理学会(2007/03/29) |
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菅原雅仁，越田信義: "二次元アレイ熱誘起ナノ結晶シリコン超音波源の位相制御動作" 応用物理学会(2007/03/28) |
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Bernard Gelloz，越田信義: "高圧水蒸気アニール処理ナノ結晶ポーラスシリコンの赤色・青色発光" 応用物理学会(2007/03/28) |
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竹内 章，越田信義: "イオン注入法により作製したナノ結晶シリコンの発光特性" 応用物理学会(2007/03/28) |
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岡本健太，越田信義，平野善之: "自己形成ナノ結晶シリコン膜の光導電特性" 応用物理学会(2007/03/28) |
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筆宝大平，浦川 圭，土屋良重，水田 博，越田信義，小田俊理: "3次元フォトニック結晶への欠陥導入によるシリコン量子ドットの自然放出制御" 応用物理学会(2007/03/28) |
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越田 信義・B. ジェローズ: "ナノシリコンによる量子機能内蔵デバイス" 日本学術振興会第151委員会研究会(2007/01/29) |
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N. Koshida: "Functional Properties of Nanosilicon and its Possible Application to Image Devices" International Display Workshop 2006 (2006/12/08) |
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越田 信義: "ナノシリコンテクノロジーによる光・電子・音響機能集積" 結晶成長学会ナノエピシンポジウム(2006/11/03) |
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越田 信義: "ナノシリコンテクノロジーによる光・電子・音響機能集積" 第36回結晶成長国内会議（NCCG-36)(2006/11/01) |
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越田 信義: "発光ナノシリコンデバイスの将来" 日本半導体製造装置協会フォーラム（ＩＳＴＦ2006）( 2006/10/11) |
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Y. Watabe, Y. Honda and N. Koshida: "Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission" International Conference on Solid State Devices and Materials(2006/09) |
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H. Yoshimura, T. Sakaguchi and N. Koshida: "Development of Flexible Electrochromic Device with Thin Film Configuration" International Conference on Solid State Devices and Materials(2006/09) |
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B. Gelloz and N. Koshida: "Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon with Fully Annealed and Passivated Surfaces" International Conference on Solid State Devices and Materials（2006/09） |
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N. Koshida: "Functions and Device Applications of Quantum-sized Silicon" International Conference on Solid State Devices and Materials (2006/09/13） |
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ジェローズベルナール，越田信義: "高圧水蒸気アニール処理したナノ結晶シリコンポーラスシリコンの光学特性" 応用物理学会(2006/09/01) |
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太田敢行，小島 明，越田信義: "ナノシリコン弾道電子エミッタの大気圧動作と表面終端制御による安定化" 応用物理学会(2006/08/31) |
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幡井 崇，櫟原 勉，相澤浩一，菰田卓哉，越田信義: "ナノ結晶化多結晶Si弾道電子エミッタの気体放電イグニッション効果" 応用物理学会(2006/08/31) |
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吉村栄郎，越田信義: "固体薄膜エレクトロクロミック素子の開発" 応用物理学会(2006/08/29) |
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筆宝大平，浦川圭，川田善之，土屋良重，水田博，越田信義，小田俊理: "2方向エッチングによるシリコン3次元フォトニック結晶への欠陥導入プロセス" 応用物理学会(2006/08/29) |
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N. Koshida: "Luminescence and Related Functions of Nanocrystalline Porous Silicon" International Conference on Optical and Optoelectronic Properties of Materials and Applications 2006(2006/07/18) |
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D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, S. Oda: "Fabrication of silicon 3D photonic crystal structures in 100nm scale using double directional etching method" Conference on Laser and Electro-Optics(2006/05) |
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越田 信義: "量子サイズナノシリコンの光･電子･音響･バイオ機能" 第3回シリコン・フォトニクス研究会( 2006/05/12) |
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越田信義: "ナノシリコン材料の機能と光・電子・音響・バイオ分野への応用" 新化学発展協会新素材技術部会講演会(2006/03/30) |
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柴田崇之，Bernard Gelloz，越田信義: "高圧水蒸気アニールによるナノ結晶ポーラスシリコンのEL安定化" 応用物理学会(2006/03/30) |
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浦川 圭，筆宝大平，越田信義: "シリコンナノ周期構造の作製" 応用物理学会(2006/03/25) |
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吉田祐樹，越田信義: "ナノ結晶シリコンダイオードの光電子メモリ機能" 応用物理学会(2006/03/25) |
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渡部祥文，本多由明，立田美佳，越田信義: "熱誘起超音波源用ナノ結晶ポーラスシリコンの熱浸透率" 応用物理学会(2006/03/25) |
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木原 隆，原田敏裕，越田信義: "ナノ結晶シリコン層の熱浸透率測定" 応用物理学会(2006/03/25) |
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中田智成，松葉陽平，田中亮太，酒村一到，根岸伸安，奥田義行，佐藤英夫，渡辺 温，吉川高正，小笠原清秀，難波正和，岡崎三郎，谷岡健吉，江上典文，越田信義: "アクティブ駆動型HEEDの開発と撮像カメラへの応用(2)" 応用物理学会(2006/03/25) |
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太田敢行，小島 明，越田信義: "弾道電子エミッタの大気圧動作と安定化" 応用物理学会(2006/03/25) |
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吉村栄郎，坂口智典，越田信義: "フレキシブルエレクトロクロミック素子の開発" 応用物理学会(2006/03/24) |
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筆宝大平，浦川 圭，川田善之，土屋良重，水田 博，越田信義，小田俊理: "二方向エッチングによるシリコン3次元フォトニック結晶の作製" 応用物理学会(2006/03/22) |
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T. Kihara, T. Harada, M. Kato, T.R. Saito, and N. Koshida: "Bio-acoustic applications of nanocrystalline silicon ultrasound emitter" The 5th Int. Conf. on Porous Semiconductors Science and Technology(2006/03/16) |
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B. Gelloz, T. Shibata, and N. Koshida: "Stabilization of nanocrystalline porous silicon electroluminescence by high-pressure water vapor annealing" The 5th Int. Conf. on Porous Semiconductors Science and Technology(2006/03/16) |
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N. Koshida, K. Tsubaki, Y. Watabe, H. Yamanaka, K. Kitada, and T. Komoda: "Operation of porous silicon ultrasonic emitter as 3-D image sensing probe in air" The 5th Int. Conf. on Porous Semiconductors Science and Technology(2006/03/16) |
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B. Salhi, B. Gelloz, N. Koshida, and R. Boukherroub: "Synthesis and optical properties of silicon nanowires" The 5th Int. Conf. on Porous Semiconductors Science and Technology(2006/03/13) |
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越田信義: "量子サイズナノシリコンの光電子機能とデバイス応用" レーザ学会講演大会(2006/02/09) |
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N. Koshida: "Functional Device Applications of Quantum-sized Nanosilicon" Institute Official Seminar (2006/01/26) |
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D. Hippo, K. Urakawa, H.J. Cheong,Y. Kawata, A. Tanaka, Y. Tsuchiya, H. Mizuta, N. Koshida, S. Oda: "A new design of nanocrystalline optical devices based on 3-dimensional photonic crystal structures of Silicon 3D Photonic Crystal Structures with Designed Defects" The 2nd Int. Conf. on Group-IV Photonics(2005/09) |
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Bernard Gelloz，柴田崇之，越田信義: "高圧水蒸気アニールによるナノ結晶ポーラスシリコンの発光特性向上" 応用物理学会(2005/09/09) |
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吉村栄郎，越田信義: "高速・高安定固体エレクトロクロミック素子の開発" 応用物理学会(2005/09/09) |
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筆宝大平，浦川 圭，川田善之，土屋良重，水田 博，越田信義，小田俊理: "磁場印加陽極酸化法を用いたシリコン3次元構造の作製" 応用物理学会(2005/09/08) |
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菅原智明，近藤 浩，越田信義: "ポーラスシリコンコールドカソードの帯電特性" 応用物理学会(2005/09/07) |
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中田智成，田中亮太，酒村一到，根岸伸安，奥田義行，佐藤英夫，渡辺 温，吉川高正，小笠原清秀，難波正和，岡崎三郎，谷岡健吉，江上典史，越田信義: "アクティブ駆動型HEEDの開発と撮像カメラへの応用" 応用物理学会(2005/09/07) |
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越田 信義: "量子サイズナノシリコンの形成とデバイス応用" 金属のアノード酸化皮膜の機能化部会(2005/07/29) |
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越田 信義: "Siナノ構造" 第45回電気化学セミナー(2005/07/21) |
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D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, S. Oda: "A new fabrication process of 3-dimensional full bandgap silicon photonic crystal structures at submicron scale" Conference on Laser and Electro-Optics Europe(2005/06) |
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太田 敢行，小島 明，越田 信義: "弾道電子エミッタの低真空・大気中動作特性" 応用物理学会(2005/03) |
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吉村 栄郎，越田 信義: "高速応答固体エレクトロクロミック素子の開発" 応用物理学会(2005/03) |
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椿 健治，山中 浩，北田 耕作，菰田 卓哉，越田 信義: "熱誘起ナノ結晶シリコン超音波源の空中3次元イメージセンサへの応用" 応用物理学会(2005/03) |
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新部 真央，小島 明，Bernard Gelloz，越田 信義: "シリコンのみで構成した弾道電子励起発光素子の特性" 応用物理学会(2005/03) |
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内田 哲也，小島 明，Bernard Gelloz，越田 信義: "弾道電子励起固体面発光素子の動作安定化" 応用物理学会(2005/03) |
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渡部 祥文，本多 由明，越田 信義: "熱誘起ナノ結晶シリコン超音波エミッタの放射指向性" 応用物理学会(2005/03) |
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木原 隆，原田 敏裕，越田 信義: "熱誘起超音波放出ナノ結晶層の内部応力" 応用物理学会(2005/03) |
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山崎 晋，平野 喜之，久保田 節，谷岡 健吉，越田 信義: "自己形成シリコンナノ結晶膜の水素化処理による光導電特性の改善" 応用物理学会(2005/03) |
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木内 良，越田 信義: "ナノシリコン多層周期構造の音響バンド結晶機能" 応用物理学会(2005/03) |
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Suhaidi Shafie，小島 明，Bernard Gelloz，越田 信義: "バンドギャップ分布を制御したナノ結晶シリコンの光導電効果" 応用物理学会(2005/03) |
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Bernard Gelloz，小島 明，越田 信義: "高圧水蒸気アニールによるナノ結晶ポーラスシリコンの超高効率・高安定フォトルミネセンス" 応用物理学会(2005/03) |
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筆宝大平，浦川 圭，土屋良重，水田 博，越田信義，小田俊理: "可視域3次元シリコンフォトニック結晶の設計と作製プロセス" 応用物理学会(2005/03) |
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N.Koshida: "Silicon Technology in Quantum Zone" Int. Symp. on Molecular Nano-Engineering and its Development into Microsystems(2004/12) |
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A. Kumagai, Y. Numazawa, Y. Murao, T. Sato, N. Koshida: "Novel Chemical Vapor Deposition of Spherically Oxidized Nanocrystaline Silicon (nc-Si) Quantum Dot Multilayer" PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS Dry process; DPS 2004(2004/11) |
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K. Tsubaki, T. Komada, N. Koshida: "Enhancing the Sound Pressure of Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon" Materials Research Society Fall Meeting 2004(2004/11) |
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Y. Tsuchiya, T. Nakatsukasa, H. Mizuta, S. Oda, A. Kojima, N. Koshida: "Quasiballistic Electron Emission from Planarized Nanocrystalline-Si surface Emitting Devices" Materials Research Society Fall Meeting 2004(2004/11) |
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B. Gelloz, A. Kojima, H. Sano, M. Niibe, T. Uchida, N. Koshida: "Improved Optoelectronic Characteristic of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing" Materials Research Society Fall Meeting 2004(2004/11) |
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A. Kiuchi, B. Gelloz, N. Koshida: "Possible Operation of Periodically Layered Nanocrystalline Porous Silicon as An Acoustic Band Crystal Device" Materials Research Society Fall Meeting 2004(2004/11) |
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平野 喜之、久保田 節、谷岡 健吉、 山崎 晋、越田 信義: "シリコンナノ結晶膜の光電変換効率改善" 情報入出力デバイス技術研究会(2004/11/26) |
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T. Kihara, T. Harada and N. Koshida: "Practical Wafer-compatible Fabrication Nanocrystalline Silicon Thermally Induced Ultrasound Emitters" 206th Meeting of Electrochemical Society(2004/10) |
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K. Tsubaki, T. Komoda and N. Koshida: "Improvement in the Efficiency of Thermally-Induced Ultrasonic Emission from Porous Silicon by Nano-structural Control" 206th Meeting of Electrochemical Society(2004/10) |
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H. Mizuta, M. Khalafalla, Z. A.K. Durrani, S. Uno, N. Koshida, Y. Tsuchiya, and S. Oda: "Electron Transport Properties and Device Applicationsof Nanocrystalline Silicon Quantum Dots" 206th Meeting of Electrochemical Society(2004/10) |
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B. Gelloz, A. Kojima and N. Koshida: "Enhancement of Photoluminescence of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing" 206th Meeting of Electrochemical Society(2004/10) |
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山中 浩、椿 健治、北田耕作、菰田卓哉、越田信義: "熱誘起ナノ結晶Si超音波源の空中3次元イメージセンサへの応用ー物体形状認識能の実証ー" 第25回超音波エレクトロニクスの基礎と応用に関するシンポジウム(2004/10/27) |
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渡部 祥文，本多 由明，菰田 卓哉，越田 信義: "熱誘起ナノ結晶シリコン超音波素子の発熱電極温度" 応用物理学会(2004/09) |
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木原 隆，原田 敏裕，越田 信義: "３ω法によるナノ結晶シリコン層の熱伝導率測定" 応用物理学会(2004/09) |
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Bernard Gelloz，小島 明，越田 信義: "高圧水蒸気アニールによるナノ結晶ポーラスシリコンのフォトルミネセンス特性向上" 応用物理学会(2004/09) |
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越田 信義: "量子サイズナノシリコンの機能と表面" 表面技術協会講演会(2004/09) |
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T. Kihara, T. Harada and N. Koshida: "Precise Thermal Characterization of Nanocrystalline Silicon by a 3ω Method" 2004 Int. Conf. on Solid State Devices and Materials(2004/09) |
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B. Gelloz, T. Uchida, M. Niibe, A. Kojima, and N. Koshida: "Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes" 2004 Int. Conf. on Solid State Devices and Materials(2004/09) |
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A. Kiuchi and N. Koshida: "New Operation Mode of Nanocrystalline Silicon Ultrasonic Emitter for use as an Audio Speaker" 2004 Int. Conf. on Solid State Devices and Materials(2004/09) |
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S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta: "Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot array Interconnected with Thin Oxide Layers" 2004 Int. Conf. on Solid State Devices and Materials(2004/09) |
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T. Kihara, T. Harada and N. Koshida: "Precise Thermal Characterization of Confined Nanocystalline Silicon By a 3ω Method" International Conference on Solid State Devices and Materials (2004/09) |
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N. Koshida: "Novel Device Applications of Quantum-Sized Nanocrystalline Silicon" International Symposium on Crystal Growth Aspects of Nano-Materials(2004/08) |
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越田 信義: "量子サイズナノシリコンの機能とデバイス応用" 日本学術振興会将来加工技術第136委員会第３回研究会(2004/08) |
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N. Koshida, A. Kojima, T.Ichihara, and T. Komoda: "Usefulness of nanocrystalline silicon ballistic emitter for operation in either low-pressure or atmospheric pressure" Int. Vacuum Nanoelectronics Conf. (2004/07) |
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椿 健治，広田 潤，木内 良，菰田 卓哉，越田 信義 : "熱誘起ナノ結晶シリコン超音波素子のサイズ効果" 応用物理学会(2004/03) |
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広田 潤，木内 良，越田 信義: "熱誘起ナノ結晶シリコン超音波源アレイの位相制御動作" 応用物理学会(2004/03) |
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中島 宜樹，内田 哲也，外山 元，安藤 伸行，小島 明，鮫島 俊之，越田 信義: "弾道電子励起固体面発光素子の動作安定化" 応用物理学会(2004/03) |
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小島 明，中島 宜樹，安藤 伸行，鮫島 俊之，越田 信義: "ナノシリコン弾道電子放出素子の動作安定化" 応用物理学会(2004/03) |
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山崎 晋，平野 善之,越田 信義: "LPCVD法による自己形成ナノ結晶シリコン膜のEL特性" 応用物理学会(2004/03) |
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岡本 浩一，越田 信義: "イオン注入法によるナノ結晶シリコンの作成" 応用物理学会(2004/03) |
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Bernard Gelloz，中島 宜樹，小島 明，越田信義: "Enhanced photoluminescence of nanocrystalline porous silicon by high-pressure H2O vapor annealing" 応用物理学会(2004/03) |
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佐野 創，Bernard Gelloz, 越田 信義: "シリコンＥＬ素子の動作安定化" 応用物理学会(2004/03) |
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梅松 一頼，越田 信義: "ナノ結晶ポーラスシリコンファブリペロー共振器の特性向上" 応用物理学会(2004/03) |
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栗田 直樹, 新部 真央，Bernard Gelloz，越田 信義: "シリコン発光素子の発光波長制御" 応用物理学会(2004/03) |
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趙 雲, 越田 信義: "シリコンナノ周期構造の作製" 応用物理学会(2004/03) |
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N. Negishi, K. Sakemura, T. Yamada, H. Sato, A. Watanabe T. Yoshikawa, K. Ogasawara, and N. Koshida: "A novel efficient cold electron emitter with a micro-dimple metal-insulator-semiconductor structure" International Conf. On Porous Semiconductor Science and Technology(2004/03) |
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J. Hirota, A. Kiuchi and N. Koshida: "Phased array operation of nanocrystalline porous silicon ultrasonic emitters" International Conf. On Porous Semiconductor Science and Technology(2004/03) |
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B. Gelloz, H. Sano, R. Boukherroub, D.D.M. Wayner, D.J. Lockwood, and N. Koshida: "Stabilization of nanocrystalline silicon electroluminescence by surface passivation with organic ligands" International Conf. On Porous Semiconductor Science and Technology(2004/03) |
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酒村一到，中田智成，根岸伸安，奥田義行，佐藤英夫，渡辺温，吉川高正，小笠原清秀，越田信義: "高効率電子放出素子（HEED）の開発とその応用" 日本学術振興会真空ナノエレクトロニクス第158委員会第51回研究会(2004/03/04) |
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T. Ichihara, Y. Honda, T. Hatai, T. Baba, Y. Takegawa, Y. Watabe, K. Aizawa, T. Komoda, V. Vezin, and N. Koshida: "Development of 7.6-in. diagonal full color ballistic electron surface-emitting display on PDP-grade glass substrate" 日本学術振興会真空ナノエレクトロニクス第158委員会第50回研究会(2003/12) |
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T. Ichihara, Y. Honda, T. Hatai, T. Baba, Y. Takegawa, Y. Watabe, K. Aizawa, T. Komoda, V. Vezin, and N. Koshida: "Development of 7.6-in. diagonal full color ballistic electron surface-emitting display on PDP-grade glass substrate" International Display Workshop (2003/12) |
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木原 隆、原田敏裕、広田 潤、越田信義: "Ultrasound Emission Characteristics of Thermally Induced Sound Emitter Employed Nanocrystalline Silicon Layer" 第24回超音波エレクトロニクスの基礎と応用に関するシンポジウム(2003/11/12) |
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B. Gelloz and N. Koshida: "Enhancing efficiency and stability of nanocrystalline porous silicon electroluminescence by surface treatments" Electrochemical Society Meeting Int. Symp(2003/10) |
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N. Koshida, K. Kojima, Y. Nakajima, T. Ichihara, Y. Watabe, and T. Komoda: "Application of ballistic electron effect in nanocrystalline silicon diodes to flat panel displays" Electrochemical Society Meeting Int. Symp(2003/10) |
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木内 良，広田 潤，越田 信義: "超音波ナノ結晶シリコン超音波素子のスピーカー応用に関する研究" 応用物理学会(2003/09) |
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椿 健治，広田 潤，菰田 卓哉，越田 信義: "熱励起ナノ結晶シリコン超音波素子の音圧向上" 応用物理学会(2003/09) |
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中嶋 宜樹，内田 哲也，外山 元，小島 明，越田 信義: "弾道電子励起固体面発光素子のマルチカラー化" 応用物理学会(2003/09) |
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Bernard Gelloz，越田 信義: "Enhancing porous silicon LED performance by surface treatments" 応用物理学会(2003/09) |
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Y. Nakajima, T. Uchida, A. Kojima, B. Gelloz, N. Koshida: "A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitations" International conference on solid state devices and materials(2003/09) |
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J. Hirota, H. Shinoda, N. Koshida: "Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon" International conference on solid state devices and materials(2003/09) |
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B. Gelloz, N. Koshida: "High Performance Electroluminescence from Nanocrystalline Si with Carbon Buffer" International conference on solid state devices and materials(2003/09) |
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神田 隆行，菰田 卓哉，越田 信義: "ポーラス多結晶シリコン膜を用いた発光デバイスの高効率化" 第50回応用物理学関係連合講演会(2003/08) |
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T. Kihara, J. Hirota and N. Koshida: "Wafer-compatible Fabrication of Thermally induced Ultrasound Emitters using Nanocrystalline Silicon Layer" The 12th International Conference on Solid State Sensors, Actuators and Microsystems(2003/06) |
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K. Sakemura, N. Neghishi, T. Yamada, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida: "Development of An Advanced HEED (High-Efficiency Electro-emission Device)" International vacuum microelectronics conference(2003/05) |
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T. Ichihara, T. Baba, T. Kodama, N. Koshida: "Correlation between Nanostructure and Electron Emission Characteristics of Ballistic Electron Surface-Emitting Device (BSD)" International vacuum microelectronics conference(2003/05) |
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中務 琢也，中村 暦，土屋 良重，宇佐美 浩一，小田 俊理，小島 明，越田 信義: "ナノクリスタルシリコン平面型電子源の電子エネルギー分布" 第50回応用物理学関係連合講演会(2003/03) |
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渡部 祥文，相澤 浩一，菰田 卓哉，越田 信義: "低温酸化により作製したナノ結晶化多結晶Si電子源の電子放出特性" 第50回応用物理学関係連合講演会(2003/03) |
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広田 潤，米岡 響子，浅村 直也，越田 信義，篠田 裕之: "熱誘起ナノ結晶シリコン超音波素子による放射圧の発生" 第50回応用物理学関係連合講演会(2003/03) |
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小井 浩司，越田 信義: "ナノ結晶ポーラスシリコンの光メモリ効果" 第50回応用物理学関係連合講演会(2003/03) |
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中嶋 宜樹，内田 哲也，外山 元，小島 明，越田 信義: "弾道電子励起固体面発光素子のマルチカラー化" 第50回応用物理学関係連合講演会(2003/03) |
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小島 明，越田 信義: "ピコ秒TOF法によるナノ結晶ポーラスシリコン層の弾道輸送解析" 第50回応用物理学関係連合講演会(2003/03) |
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新井 一之，栗田 直樹，Gelloz Bernard，越田 信義: "ポーラスシリコンの弾道電子励起エレクトロルミネッセンス" 第50回応用物理学関係連合講演会(2003/03) |
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菰田卓哉，越田信義: "ＢＳＤ電子源の現状" 日本学術振興会第158委員会46th研究会(2003/03) |
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山田高士，秦拓也，酒村一到，岩崎新吾，根岸伸安，中馬隆，佐藤英夫，吉川高正，小笠原清秀，越田信義: "高効率電子放出素子（ＨＥＥＤ）の特性改善とその応用" 日本学術振興会第158委員会46th研究会 (2003/03) (in Japanese) |
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越田信義: "ナノ結晶シリコンの機能と応用" 日本学術振興会第147委員会80th研究会 (2003/03) (in Japanese) |
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T. Yamada, T. Hata, K. Sakemura, S. Iwasaki, N. Negishi, T. Chuman, H. Satoh, T. Yoshikawa, K. Ogasawara, and N. Koshida: "Development of an advanced HEED (High Efficiency Electron Emission Device) and its application to FPDs" The 9th Int. Display Workshop (2002/12) |
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T Ichihara, Y Honda, T Baba, Y Takegawa, Y Watabe, T Hatai, K Aizawa, T Komoda, V. Vezin and N Koshida: "Improved Electron Emission Characteristics of BSD (Ballistic Electron Surface-emitting Display) on a Glass Substrate Fabricated with Low Temperature Process" The 9th Int. Display Workshop (2002/12) |
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N. Koshida, A. Kojima, Y. Nakajima, T. Ichihara, Y. Watabe, and T. Komoda: "Development of Nanocrystalline Silicon Ballistic Electron Emitter and Its Application to Flat Panel Display" The 9th Int. Display Workshop (2002/12) |
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B. Gelloz and N. Koshida: "Effects of Amorphous Carbon Films on the Performance of Porous Silicon Electroluminescence" Mat. Res. Soc. Symp. (2002/12) |
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N. Koshida, B. Gelloz, A. Kojima, T. Migita, Y. Nakajima, T. Ichihara, Y. Watabe, and T. Komoda: "Photon, electron and ultrasonic emission from nanocrystalline porous silicon devices" Mat. Res. Soc. Symp. (2002/12) |
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B.Gelloz,and N.Koshida. Effects of amorphous carbon films on the performance of porous silicon electroluminescence. Journees Science et Technologie 2002 2002年11月17日～19日 (2002) |
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越田信義 ナノシリコンの機能と素子応用 第29回アモルファス物質の物性と応用セミナー 2002年11月25日～26日 (2002) (in Japanese) |
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櫟原勉、本多由明、馬場徹、菰田卓哉、越田信義 弾道電子面放出型電子源のフラットパネルディスプレイへの応用 応用物理学会分科会 ｼﾘｺﾝﾃｸﾉﾛｼﾞｰ No.46 2002年11月22日 (2002) (in Japanese) |
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B.Gelloz, 新井一之,佐野創,越田信義 Enhancing the performance of electroluminescence from nanocrystalline porous silicon diodes 応用物理学会分科会 シリコンテクノロジー No.46 2002年11月22日 (2002) (in Japanese) |
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木原隆、右田達夫、広田潤、越田信義 ﾅﾉ結晶ｼﾘｺﾝ超音波素子 応用物理学会分科会 シリコンテクノロジー No.46 2002年11月22日 (2002) (in Japanese) |
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越田信義 ナノ結晶シリコン弾道電子エミッタ 早稲田大学材料技術研究所オープンセミナー 20002年11月12日 (2002) (in Japanese) |
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菰田卓哉、越田信義 ナノテクノロジーを応用したＢＳＤ電子源の現状 平成13年度公開シンポジウム 高輝度電子源アレイと真空マイクロエレクトロニクスへの展開 平成14年3月5日 (2002) (in Japanese) |
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越田信義 映像・音響情報機能パッケージングに向けて 公開シンポジウム 2002年3月1日 (2002) in Japanese) |
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越田信義 映像・音響情報機能パッケージングの研究 「超機能グローバル」研究会 2002年3月2日 (2002) (in Japanese) |
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越田信義 面放出型Siナノ結晶フィールドエミッター 第29回薄膜・表面物理セミナー 半導体ナノテクノロジーの展開 2001年7月23日～24日 |
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越田信義 量子サイズシリコンの新機能と応用 第32回研究会 「ナノテクノロジー最前線」 2001年6月26日 (2001) (in Japanese) |
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櫟原 勉，菰田卓哉（松下電工），越田信義（農工大） 多孔質多結晶Siを用いた冷陰極の電子放出特性 光・量子デバイス研究会 平成12年6月23日 (2000) (in Japanese) |
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越田信義 弾道電子面放出型電子源の特性とフラットパネルへの応用 平成12年度公開シンポジウム 高輝度電子源アレイと真空マイクロエレクトロニクスへの展開 平成12年2月23日 (2000) in Japanese) |
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松本貴裕、高橋森生、鳥海裕一、戚発継、舛本泰章、越田信義 ﾅﾉ構造ｼﾘｺﾝ半導体を利用した発光・非線形光学素子 第８回 研究集会詳細 1999年4月23日 (1999)(in Japanese) |
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Bernard GELLOZ、高橋勇一、越田信義 Efficient Porous Silicon Electroluminescence Device 第８回 研究集会詳細 1999年4月23日 （1999） |
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N. Koshida, Visible Light Emission from Porous Silicon ―Present Status of Studies and Technological Potential.（多孔質シリコンの可視発光―研究の現状と技術的可能性－）, Tech. Rep. Inst. Crystal Growth Jpn., 30-35 (1995) (in Japanese) . |
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N. Koshida, Y. Suda, H. Koyama, T.Ozaki, M.Araki, and T.Oguro, Visible Luminescence of Porous Silicon ―Present Status of Studies and Technological Potential-.（多孔質シリコンの可視発光―研究の現状と技術的可能性）, Tech. Rec. IEICE, EID94-43, 37-42 (1994) (in Japanese). |
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H. Koyama and N. Koshida, Visible Luminescence from Porous Silicon and Its Possible Mechanisms.（多孔質Siの可視発光とその機構）, 21st Jpn. Soc. Appl. Phys. Seminar on Thin Films and Surf. Phys., Tokyo, 111-123 (1993) (In Japanese) . |
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N. Koshida and H. Koyama, Optical Properties and Visible Luminescence of Porous Silicon.（多孔質シリコンの光物性と可視発光）, Ext. Abst. 3rd Symp. Interface-Control Heteroepitaxy, Tokyo Institute of Technology, (1992), 47-50(In Japanese) . |
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N. Koshida, Visible Light Emission from Porous Silicon.（多孔質シリコンの可視発光特性）, Ext. Abst. 239th Meeting of Fluorescent Materials, Tokyo, 1-6 (1992)(in Japanese) . |
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N. Koshida and H. Koyama, Visible Luminescene of Porous Silicon.（多孔質シリコンの可視発光）, Japan Society for the Promotion of Science 147 Committee 35th Meeting, Osaka, 6-11 (1992)(in Japanese). |
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N. Koshida, Porous Silicon-Visible Light Emiission- （ポーラスシリコン―可視発光―）, 3rd Symp. Kanagawa Acad. Of Sci. 6 tech. On “Next-Generation ULSI Technologies”, Yokohama, 99-105 (1992) (InJapanese). |
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N. Koshida and H. Koyama, Optical Properties and Luminescence of Porous Silicon.（多孔質シリコンの光物性と発光）, Jpn. Soc. For the Promotion of Science 125 Committee 140th Meeting, Osaka, 1-6 (1992) (in Japanese). |
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N. Koshida and H. Koyama, Visible Luminescence from Porous Silicon and Present Status of Studies (Invited).（多孔質シリコンの可視発光と研究の現状）, 9th Jpn. Soc. Appl. Phys. Symp. of Crystal Technol., Tokyo, 21-26 (1992) (in Japanese). |
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M. Nagasu and N. Koshida, Photointercalation Effect and Its Application to Information Pickup Devices.（光インターカレーション効果とその情報入力デバイスへの応用）, IETJ Tech. Rep. 13, No. 48, 1-6 (1989) (in Japanese). |
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N. Koshida, Application of Ion Implantation to Function Control of Electronic Materials.（イオン注入による電子材料の高機能化）, Japan Society for the Promotion of Sci. 136-2 Committee 3rd Meeting, 7-12 (1989) (In Japanese) . |