|
Takayuki Higuchi, Nobuyoshi Koshida, Toshihiro Nakamura, Low-temperature
high-yield fabrication of colloidal Si quantum dots with in situ
tunability for luminescence band from red to green, J. Appl. Phys. 135,
094303 (2024). https://doi.org/10.1063/5.0186551 |
|
Nobuyoshi Koshida,
More silicon-deep in the nanovalley-,
Materials Science in Semiconductor Processing 162,(2023) 107477. https://doi.org/10.1016/j.mssp.2023.107477 |
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Ryoko Yamamoto, Akira Kojima, Nobuyoshi Koshida, Isao Morohashi, Kazuhiko Hirakawa, and Ya Zhang,
Thermal and optical properties of porous nanomesh structures for sensitive terahertz bolometric detection,
Sensors 22(14), 5109 (2022). https://doi.org/10.3390/s22145109 |
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Haruki Zayasu, Takahiko Kawaguchi, Hiroki Nakane, Nobuyoshi Koshida, Kazuo Shinozaki, Hisao Suzuki, Naonori Sakamoto, and Naoki Wakiya,
Preparation and characterization of epitaxially grown YSZ thin films on porous silicon substrates for SOFC applications",
Journal of the Ceramic Society of Japan 130 [7], 464-470 (2022). http://doi.org/10.2109/jcersj2.21178 |
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Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, and Hideyuki Ohyi,
Development of Massive Parallel Electron Beam Write (MPEBW) System: Aiming at Digital Fabrication of Integrated Circuit,
Jpn. J. Appl. Phys. 61, SD0807/1-19 (2022). https://doi.org/10.35848/1347-4065/ac4ce1 |
|
N. Koshida, Thermal Properties of Nanoporous Silicon Materials, Chapter 2 (p. 27-49),
in “Porous Silicon for Biomedical Applications”, 2nd Edition, Ed. Hélder A. Santos
(Elsevier, 2021), 820 pages. |
|
Toshihiro Nakamura and Nobuyoshi Koshida,
(Invited) Facile Formation of Luminescent Colloidal Silicon Quantum Dots from Porous Silicon,
ECS Meeting Abstracts, Vol. MA2021-01, p. 906. |
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Nobuyoshi Koshida, Akira Kojima, and Toshihiro Nakamura,
Evolutionary Applications of Functional Porous Silicon,
ECS Trans. 98(2), 29-34 (2020) doi: 10.1149/09802.0029ecst. |
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Toshihiro Nakamura, Nobuyoshi Koshida, Ze Yuan, and Jun Otsubo,
High-yield green fabrication of colloidal silicon quantum dots by low-temperature thermal cracking of porous silicon,
APL Mater. 8, 081105 (2020) 8 pages. doi: 10.1063/5.0014206. |
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Ying-Chiao Wang, Shao-Ku Huang, Toshihiro Nakamura, Yu-Ting Kao,
Chun-Hao Chiang, Di-Yan Wang, Yuan-Jay Chang, Nobuyoshi Koshida,
Toshikazu Shimada, Shihao Liu, Chun-Wei Chen, and Kazuhito Tsukagoshi,
Quantum-Assisted Photoelectric Gain Effects in Perovskite Solar Cells,
NPG Asia Materials 12, Article Number: 54 (2020) 10 pages. https://doi.org/10.1038/s41427-020-00236-1. |
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Hiroki Ishigami, Takahiko Kawaguchi, Naonori Sakamoto, Shenglei Che,
Nobuyoshi Koshida, Kazuo Shinozaki, Hisao Suzuki, and Naoki Wakiya,
Preparation of ZnFe2O4 thin film by Dynamic Aurora PLD on Si and porous
Si and their gas sensing property for liquefied petroleum gas, J. of the
Ceramic Soc. of Japan 128[8], 457-463 (2020). doi: 10.2109/jcersj2.20010. |
|
Kensaku Nomoto, Akiko Hashiguchi, Akari Asaba, Masahiro Kato, Nobuyoshi
Koshida, Kazutaka Mogi, and Takefumi Kikusui, Female C57BL/6 and BALB/c
mice use different acoustic features of male ultrasonic vocalizations
for social preferences, Experimental Animals 69(3), 319-325 (2020). Published online, Feb 26, 2020, https://doi.org/10.1538/expanim.19-0119. |
| Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, Masanori Sugata, and Hideyuki Ohyi "Development of massive parallel electron beam write system", Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780B (27 June 2019); https://doi.org/10.1117/12.2532971 |
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Bernard Gelloz, Firman Bagja Juangsa, Tomohiro Nozaki, Nobuyoshi Koshida, Lianhua Jin: "Si/SiO2 core/shell luminescent silicon nanocrystals and porous silicon powders with high quantum yield, long lifetime and good stability" Frontiers in Physics, section Optics and Photonics 7, 47 (2019). DOI: 10.3389/fphy.2019.00047 |
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N. Koshida and T. Nakamura: "Emerging Functions of Nanostructured Porous Silicon –With a focus on the emissive properties of photons, electrons, and ultrasound, Frontiers in Chemistry" Advances in Porous Semiconductors Science and Technology 7, 273 (2019) (in press). DOI: 10.3389/fchem.2019.00273 |
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越田 信義: "ナノシリコンからの弾道電子放出を用いた還元型水素生成" 水素エネルギーシステム 44 No.1, 41-46 (2019). |
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小島明・越田信義: 超並列電子ビーム描画システム、日本学術振興会、真空ナノエレクトロニクス第158委員会、第126回研究会資料（2019年3月1日、機械振興会館）p.113-125. |
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"Ryutaro Suda, Akira Kojima, and Nobuyoshi Koshida: Mechanism of liquid-phase reductive thin-film deposition under quasiballistic electron incidence" ECS J. of Solid State Sci. and Tech. 7(11), Q222-Q227 (2018). DOI: 10.1149/2.0311811jss |
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K. Nomoto, M. Ikumi, M. Otsuka, A. Asaba, M. Kato, N. Koshida, K. Mogi, T. Kikusui: "Female mice exhibit both sexual and social partner preferences for vocalizing males" Integr Zool. 13(6), 735-744 (2018). DOI: 10.1111/1749-4877.12357. |
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N. Koshida: "Emerging Applications of Nanostructured Porous Silicon (Invited)" ECS Transactions, 86(1) 39-45 (2018). DOI: 10.1149/08601.0039ecst |
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江刺正喜・宮口裕・小島明・池上尚克・越田信義・菅田正徳・大井英之: 『超並列電子ビーム描画装置の開発－集積回路のディジタルファブリケーションを目指して－』、東北大学出版会、June 6, 2018, 228 pages． 第2章 2.1節 “電子ビームの制御”，2.2節 “電子ビームの集束と電子レンズ”，第3章 3.2節 “ナノクリスタルシリコン(nc-Si)電子源”，第4章 4.6節 “等倍露光実験”，4.7節 “マルチカラム化”(pp. 19-71,106-120,187-190)を担当． |
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江刺正喜・宮口裕・小島明・池上尚克・越田信義・菅田正徳・大井英之: 超並列電子ビーム描画装置、日本学術振興会 荷電粒子ビームの工業への応用 第132委員会、第232回研究会資料（2018年10月5日、東京理科大）p.16-23. |
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越田信義・小島明・池上尚克・江刺正喜: ナノクリスタルSi電子源、日本学術振興会 荷電粒子ビームの工業への応用 第132委員会、第232回研究会資料（2018年10月5日、東京理科大）p.24-31. |
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宮口裕・江刺正喜・小島明・池上尚克・越田信義・菅田正徳・大井英之: 超並列電子ビーム描画システム、日本学術振興会、荷電粒子ビームの工業への応用第132委員会、第232回研究会資料（2018年10月5日、東京理科大）p.32-39. |
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Akira Kojima, Ryutaro Suda, and Nobuyoshi Koshida: "Reduced energy-angle dispersion of output electrons from a nanocrystalline Si emitter with a monolayergraphene surface electrode" Abst. 2018 31st International Vacuum Nanoelectronics Conference (IVNC 2018) p.38-39 (2018). DOI: 10.1109/IVNC.2018.8520089 |
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Akira Kojima, Ryutaro Suda, and Nobuyoshi Koshida: "Improved quasiballistic electron emission from a nanocrystalline Si cold cathode with a monolayer-graphene surface electrode" Appl. Phys. Lett. 112 133102 (2018). DOI: 10.1063/1.5017770 |
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Ryutaro Suda, Mamiko Yagi, Akira Kojima, Nobuya Mori, Jun-ichi Shirakashi, and Nobuyoshi Koshida: "Liquid-phase deposition of thin Si and Ge Films based on ballistic hot electron printing" Materials Sci. in Semiconductor Processing 70, 44 (2017). DOI: 10.1016/j.mssp.2016.12.022 |
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Kazutaka Mogi, Ayaka Takakuda, Chihiro Tsukamoto, Rumi Oyama, Shota Okabe, Nobuyoshi Koshida, Miho Nagasawa, and Takefumi Kikusui: "Mutual mother-infant recognition in mice: The role of pup ultrasonic vocalizations" Behavioral Brain Research 325, 138 (2017). DOI: 10.1016/j.bbr.2016.08.044 |
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R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida: "Printing deposition of thin Cu films using highly reducing ballistic hot electrons" J. Electrochem. Soc. 163(6), E162-E165 (2016). DOI: 10.1149/2.0921606jes |
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A. Kojima, N. Ikegami, T. Yoshida, H. Miyaguchi, M. Muroyama, S. Yoshida, K. Totsu, N. Koshida, and M. Esashi: "Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system (Invited)" Proc. SPIE Symp. on Advanced Lithography 9777, 977712-1～977712-9 (2016). DOI: 10.1038/micronano.2015.29 |
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Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Naokatsu Ikegami, Shuji Tanaka, Nobuyoshi Koshida, and Masayoshi Esashi: "Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography" Electronics and Communications in Japan 99(5), 11 (2016). DOI: 10.1002/ecj.11804 |
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M. Esashi, A. Kojima, N. Ikegami, H. Miyaguchi, and N. Koshida: "Development of massively parallel electron beam direct write lithography using active-matrix nanocrystalline-silicon electron emitter arrays" Microsystems & Nanoeng. 1, 15029 (2015). DOI: 10.1038/micronano.2015.29 |
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N. Koshida: "Electronic and Acoustic Applications of Anodized Nano-crystalline Silicon" ECS Transactions 69(2), 111-116 (2015). doi: 10.1149/06902.0111ecst |
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宮口裕、室山真徳、吉田慎哉、池上尚克、小島明、金子亮介、戸津健太郎、田中秀治、越田信義、江刺正喜: "超並列電子線描画用LSIの設計と評価" 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）, 135, No.10, 374-381 (2015). doi: 10.1541/ieejsmas.135.374 |
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N. Koshida, A. Kojima, N. Ikegami, R. Suda, M. Yagi, J. Shirakashi, H. Miyaguchi, M. Muroyama, S. Yoshida, K. Totsu, and M. Esashi: "Development of Ballistic Hot Electron Emitter and Its Applications to Parallel Processing: Active-Matrix Massive Direct-Write Lithography in Vacuum and Thin Film Deposition in Solutions" J. of Micro/Nanolithography, MEMS, and MOEMS 14 (3), 031215/1-7 (2015). doi: 10.1117/1.JMM.14.3.031215 |
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A. Asaba, S. Okabe, M. Nagasawa, M. Kato, N. Koshida, K.a Mogi, and T. Kikusui: "Determining Ultrasonic Vocalization Preferences in Mice Using a Two-Choice Playback Test" Journal of Visualized Experiments (JoVE),b>103 e53074/1-8 (2015). doi: 10.3791/53074 |
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池上尚克、小島明、宮口裕、吉田孝、西野仁、吉田慎哉、室山真徳、菅田正徳、 越田信義、江刺正喜: "超並列電子線描画装置用アクテイブマトリクスナ ノ結晶 シリコン電子源の開発と動作特性評価に関するレビュー" 電気学会センサ・マイ クロマシン(Ｅ)部門誌 「センサシンポジウム受賞論文特集」135,221～229 (2015). doi: 10.1541/ieejsmas.135.221 |
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N. Koshida, A. Kojima, N. Ikegami, R. Suda, M. Yagi, J. Shirakashi, T. Yoshida, H. Miyaguchi, M. Muroyama, H. Nishino, S. Yoshida, M. Sugata, K. Totsu, and M. Esashi: "Development of Ballistic Hot Electron Emitter and its Applications to Parallel Processing: Active-Matrix Massive Direct-Write Lithography in Vacuum and Thin Films Deposition in Solutions" Proc. of SPIE Symp. on Advanced Lithography, 9423, 942313/1-8 (2015). doi: 10.1117/12.2085782 |
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K. Rumpf, P. Granitzer, N. Koshida, P. Poelt, H. Michor: "Morphology Controlled Magnetic Interactions in Metal Embedded Porous Silicon Nanostructures" ECS J. of Solid State Sci. and Tech. 4(5), N41-N43 (2015). doi: 10.1149/2.0221505jss |
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N. Koshida: "Thermal Properties of Porous Silicon" in “Handbook of Porous Silicon”, Part II, ed. Leigh Canham (Springer, 2015)1017 pages (pp. 207-212). doi: 10.1007/978-3-319-05744-6_20 |
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R. Suda, M. Yagi, A. Kojima, R. Mentek, N. Mori, J. Shirakashi, and N. Koshida: "Deposition of thin Si and Ge films by ballistic hot electron reduction under a solution dripping mode and its application to the growth of thin SiGe films" Jpn. J. Appl. 54, 04DH11-1～04DH11-5 (2015). doi: 10.7567/JJAP.54.04DH11 |
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K. Rumpf, P. Granitzer, N. Koshida, P. Poelt, and M. Reissner: "Study of the Magnetic Interactions Between Metal Nanodeposits in Porous Silicon" IEEE Trans. on Magnetics, 50(11), 2303203 (2014). |
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N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori,
and J. Shirakashi: "Low-Temperature Deposition of Thin Si, Ge, and SiGe Films Using Reducing Activity of Ballistic Hot Electrons" ECS Trans. 64(6), 405-410 (2014). |
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P. Granitzer, K. Rumpf, N. Koshida, P. Poelt, and H. Michor: "Electrodeposited metal nanotube/nanowire arrays in mesoporous silicon and their morphology dependent magnetic properties" ECS Transactions. 58(32), 139-144 (2014). |
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R. Mentek, B. Gelloz, D. Hippo, and N. Koshida: "Photovoltaic effect with high open circuit voltage observed in electrochemically prepared nanocrystalline silicon membranes" Mater. Sci. & Eng. B 190, 33–40 (2014). |
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K. Rumpf, P. Granitzer, N. Koshida, P. Poelt, M. Reissner: "Magnetic interactions between metal nanostructures within porous silicon" Nano Research Lett. 9, 412 (2014). |
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N. Koshida, N. Ikegami, A. Kojima, R. Mentek, R. Suda, M. Yagi, J. Shirakashi, B. Gelloz, and N. Mori: "Ballistic hot electron effects in nanosilicon dots and their photonic applications (Invited)" ECS Transactions, 61(5) Nanoscale Luminescent Materials 3, Ed. P. Mascher and D.J. Lockwood, 47-54 (2014). |
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A. Kojima, N. Ikegami, T. Yoshida, H.Miyaguchi, M. Muroyama, H.Nishino, S. Yoshida, M. Sugata, H. Ohyi, N. Koshida, and M. Esashi: "Massively Parallel EB Direct Writing (MPEBDW) System based on Micro Electro Mechanical System (MEMS)/nc-Si emitter array" Proc. SPIE Symp. on Advanced Lithography, 9049-43 (2014). |
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西野 仁、吉田慎哉、小島 明、池上尚克、田中秀治、越田信義、江刺正喜: "超並列電子線描画装置のためのピアース型ナノ結晶シリコン電子源アレイの作製" 電気学会論文誌Ｅ（センサ・ マイクロマシン部門誌）、134(6), 146-153 (2014). |
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N. Koshida: "Thermal Properties of Nanoporous Silicon Materials" Part I: Fundamentals of porous silicon for biomedical applications, Chapter 3 in “Porous Silicon for Biomedical Applications” 35–51 (517 pages), ed. Hélder A. Santos (Woodhead Publ., Cambridge, UK, 2014). |
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N. Koshida and B. Gelloz: "Nanosilicon for advanced post-scaling applications" Chapter 14 in ”Nanostructured Semiconductors: from basic research to applications” 619-654 (684 pages), ed. P. Granitzer and K. Rumpf (Pan Stanford Publishing, Singapore, 2014). |
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B. Gelloz, R. Mentek and N. Koshida: "Ultraviolet and Long-lived Blue Luminescence of Oxidized Nano-Porous Silicon and Pure Nano-Porous Glass" ECS J. Solid State Sci. Technol 3(5) R83-R88 (2014). |
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N. Koshida, A. Kojima, T. Ohta, R. Mentek, B. Gelloz, N. Mori, and J.Shirakashi: "Electro-deposition of thin Si and Ge films based on ballistic hot electron injection" ECS Solid State Lett. 3(5) P57-P60 (2014). |
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A. Asaba, S. Okabe, M. Nagasawa, M. Kato, N. Koshida, K. Mogi, and T. Kikusui: "Developmental social environment imprints female preference for male song in mice" PLoS One 9(2) e87186 (2014). |
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H. Nishino, S. Yoshida, A. Kojima, N. Ikegami, N. Koshida, S. Tanaka, M. Esashi: "DEVELOPMENT OF MEMS PIERCE-TYPE NANOCRYSTALLINE SI ELECTRON-EMITTER ARRAY FOR MASSIVELY PARALLEL ELECTRON BEAM DIRECT WRITING" Proc. 27th IEEE Int. Conf. on MEMS (San Francisco, USA. January 26-30, 2014) 467-470. |
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江刺正喜、池上尚克、小島明、宮口裕、西野仁、越田信義、吉田孝、室山真 徳、吉田慎哉: "超並列電子線描画装置の開発" 金属 83(9) 7-12 (2013). |
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N. Ikegami, N. Koshida, A. Kojima, H. Ohyi, T. Yoshida, and M. Esashi: "Active-matrix nanocrystalline Si electron emitter array with a function of electronic aberration correction for massively parallel electron beam direct-write lithography: electron emission and pattern transfer characteristics" J. Vac. Sci. & Tech. B 31 06F703/1-8 (2013) |
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S. Okabe, M. Nagasawa, T. Kihara, M. Kato, T. Harada, N. Koshida, K. Mogi, and T. Kikusui: "Pup odor and ultrasonic vocalizations synergistically stimulate maternal attention in mice" Behavioral Neuroscience 127 432-438 (2013). |
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N. Mori, M. Tomita, H. Inari, T. Watanabe, and N. Koshida: "Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array" Jpn. Appl. Phys. 52 04CJ04 (2013). |
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N. Koshida, N. Ikegami, A. Kojima, R. Mentek, and B. Gelloz: "Ballistic Electron Effects in Nanosilicon and Their Applications (Invited)" ECS Transactions 53(4) 95-102 (2013). |
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B. Gelloz, R. Mentek, and N. Koshida: Ultraviolet and Long-lived Blue Luminescence of Oxidized Porous Silicon (Invited)" ECS Transactions 53(4) 103-111 (2013). |
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N. Koshida, D. Hippo, M. Mori, H. Yanazawa, H. Shinoda, and T. Shimada: "Characteristics of thermally induced acoustic emission from nanoporous silicon device under full digital operation" Appl. Phys. Lett. 102 123504 (2013). |
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T. Ohta, B. Gelloz, and N. Koshida: "Liquid phase deposition of thin Si films by ballistic electro-reduction" Appl. Phys. Lett. 102 022107 (2013). |
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越田信義・小山英樹: "ナノポーラスシリコンとそのデバイス" 「異種機能デバ イス集積化技術の基礎と応用－ＭＥＭS、ＮＥＭＳ、センサ、ＣＭＯSＬＳＩの融 合－」第７章、47-57 (279 pages)、 監修：益一哉・年吉洋・町田克之 （シーエムシー出版, 2012) |
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B. Gelloz, R. Mentek, and N. Koshida: "Optical properties of phosphorescent nanosilicon electrochemically doped with terbium" Phys. Status Solidi C 9(12) 2318–2321 (2012). |
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B. Gelloz and N. Koshida: "Blue Phosphorescence in Oxidized Nano-Porous Silicon" ECS Journal of Solid State Science and Technology, 1(6), R1-R5 (2012). |
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P. Granitzer, K. Rumpf, T. Ohta, N. Koshida, P. Poelt, and M. Reissner: "Porous silicon/Ni composites of high coercivity due to magnetic field assisted etching" Nanoscale Research Letters 7, 384 (2012). |
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T. Ohta, R. Mentek, B. Gelloz, N. Mori, and N. Koshida: "Liquid-phase deposition of thin Si and Ｇe films based on ballistic electro-reduction" ECS Transactions - Honolulu, 50(9), "SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices", 691-698 (2012). |
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P. Granitzer, K. Rumpf, T. Ohta, N. Koshida, M. Reissner, P. Poelt: "Enhanced magnetic anisotropy of Ni nanowire arrays fabricated on nano-structured silicon templates" Appl. Phys. Lett. 101 033110 (2012). |
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B Gelloz, A. Loni, L. Canham, and N. Koshida: "Luminescence of mesoporous silicon powders treated by high-pressure water vapor annealing" Nanoscale Research Letters 7 382 (2012). |
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N. Ikegami, T. Yoshida, A. Kojima, H. Ohyi, N. Koshida, and M. Esashi: "Active-Matrix nc-Si Electron Emitter Array for Massively Parallel Direct Write Electron Beam System" Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3) 11(3) 031406 (2012). |
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N. Koshida, T. Ohta, and B. Gelloz: "Ballistic Electron Emission from Nanosilicon Diode and its Application to Ultra-Thin Film Deposition of Silicon and Germanium (Invited)" ECS Transactions 45(5), Nanoscale Luminescent Materials 2, 221-228 (2012). |
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B. Gelloz, and N. Koshida: "Blue Phosphorescence in Oxidized Nano-Porous Silicon (Invited)" ECS Transactions 45(5), "Nanoscale Luminescent Materials 2", 177-189 (2012). |
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N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida: "Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array" Jpn. Appl. Phys. 51 04DJ01 (2012). |
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W. Bousslama, H. Elhouichet, B. Gelloz, B. Sieber, M. Moreau, M. Férid, and N. Koshida: "Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol-Gel Method" Jpn. Appl. Phys. 51 04DG13 (2012). |
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Romain Mentek, Bernard Gelloz and Nobuyoshi Koshida: "Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers" Jpn. Appl. Phys. 51 02BP05 (2012). |
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W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid, and N. Koshida: " Energy transfer induced Eu3+ photoluminescence enhancement in tellurite glass" J. Lumin. 132 205-209 (2012). |
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N. Koshida, T. Ohta, B. Gelloz, and A. Kojima: ”Ballistic electron emission from quantum-sized nanosilicon diode and its applications” Current Opinion in Solid State and Materials Science, 15 183–187 (2011). |
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H. Sugimoto, S. Okabe, M. Kato, N. Koshida, T. Shiroishi, K. Mogi, T. Kikusui, T. Koide: "A role for strain differences in waveforms of ultrasonic vocalizations during male–female interaction" PLoS One 6 e22093/1-10 (2011). |
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T. Ohta, B. Gelloz, and N. Koshida: " Multilayered thin metal films deposition by sequential operation of nanosilicon electron emitter in metal-salt solution" Jpn. J. Appl. Phys. 50 06GG03/1-4 (2011). |
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N. Mori, H. Minari, S. Uno, H. Mizuta, and
N. Koshida: " Theory of quasi-ballistic transport through nanocrystalline silicon dots" Appl. Phys. Lett. 98 062104 (2011) . |
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T. Ohta, B. Gelloz, and N. Koshida: " Counter-electrode-free thin Cu film deposition based on ballistic electron injection into CuSO4 solution from nanosilicon emitter" Jpn. J. Appl. Phys. STAP, 50 010104/1-4 (2011). |
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N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz: "Functional Device Applications of Nanosilicon" Key Engineering Materials 470 20-16 (2011). |
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N. Koshida: "Sensor Applications of silicon nanostructures (Invited)" IEICE Tech. Report on Silicon Photonics, 19 July, 2011, Tokyo, 7-12 (In Japanese). |
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N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz: "Photonic, Electronic, and Acoustic Applications of Nanosilicon (Invited)" Book Chapter in "Physics, Chemistry and Application of Nanostructures", ed. V E Borisenko et al (World Sci. Pub., 2011) 11-18. |
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N. Koshida, T. Ohta, Y. Hirano, R. Mentek, and B. Gelloz: "Photonic, Electronic, and Acoustic Applications of Nanosilicon" Proc. NanoMeeting 2011, Physics, Chemistry and Application of Nanostructures (Invited), 27 May, 2011, Minsk, Belarus, 11-18 |
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A. Kojima, H. Ohyi, T. Ohta, and N. Koshida: "Fast and Large Field Electron Beam exposure by CSEL" Proc. SPIE, Alternative Lithographic Technorogies III, 7970 7970 R/1-10 /(2011), San Jose, US, 1-3 March, 2011. |
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B. Gelloz, N. Harima, H. Koyama, H. Elhouichet, and N. Koshida: " Energy transfer from phosphorescent blue-emitting oxidized porous silicon to rhodamine 110" Appl. Phys. Lett. 97 171107/1-3 (2010). |
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M. Fujita, B. Gelloz, N. Koshida, and S. Noda: " Reduction of surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water vapor annealing" Appl. Phys. Lett. 97 121111/1-3 (2010). |
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B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, and N. Koshida: " Electropolymerization of Poly(para-phenylene)vinylene Films onto and inside Porous Si Layers of Different Types and Morphologies" J. Electrochem. Soc. 157(12) D648-D655(2010). |
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S. Okabe, M. Nagasawa, T. Kihara, M. Kato, T. Harada, N. Koshida, K.
Mogi, and T. Kikusui: " The Effects of Social Experience and Gonadal Hormones on Retrieving Behavior of Mice and their Responses to Pup Ultrasonic Vocalizations" Zoological Science 27(10) 790-795 (2010). |
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T. Ohta, B. Gelloz, N. Koshida: " Thin Cu film deposition by operation of nanosilicon ballistic electron emitter in solution" Electrochemical and Solid-State Letters13(10) D73-D75 (2010). |
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B. Gelloz and N. Koshida: " Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing" Thin Solid Films 518(12) 3276-3279 (2010). |
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R. Mentek, B. Gelloz, N.and Koshida: " Fabrication and Optical Characterization of Self-standing Wide-gap Nanocrystalline Silicon Layers" Jpn. J. Appl. Phys. 49 04DG22-1-04DG22-3 (2010). |
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T. Nakada, T. Sato, Y. Matsuba, K. Sakemura,Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara,
M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida: " 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device" J. Vac. Sci. Technol. B 28 C2D11-15 (2010). |
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Y. Hirano, M. Nanba, N. Egami, S. Yamazaki and N. Koshida: " Development of dry-processed silicon nano-dot planar cold cathode and its electron emission properties" J. Vac. Sci. Technol. B 28 C2B6-C2810 (2010). |
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T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, L. Jin,c and N.
Koshida: " Direct Electropolymerization of Poly(para-phenylene)vinylene Films on Si and Porous Si" J. Electrochem. Soc. 157(5) H534-H539 (2010). |
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T. Ichihara, T. Hatai and N. Koshida: " Direct excitation of xenon by ballistic electrons emitted from nanocrystalline silicon planar cathode and vacuum-ultraviolet light emission" J. Soc. Information Display 18/3 223-227 (2010). |
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A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, M. Oueslati, and N.
Koshida: " Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory" Thin Solid Films 518 S212-S216 (2010). |
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A. Chouket, B. Gelloz, H. Koyama, H. Elhouichet1, M. Oueslati1, and N.
Koshida: " Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon" J. Luminescence 129 1332-1335 (2009). |
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Y. Hirano, K. Okamoto, S. Yamazaki, and N. Koshida: " Avalanche multiplication of photo-carriers in nanometer-sized silicon dot layers" Appl. Phys. Lett. 95 063109 (2009). |
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D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshid, and
Shunri Oda: " Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method" Materials Chemistry and Physics 116(1) 107-111 (2009). |
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B. Gelloz and N. Koshida: "Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon" Appl. Phys. Lett． 94 201903-05 (2009). |
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B. Gelloz, R. Mentek and N. Koshida: "Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High Pressure Water Vapor Annealing" Jpn. J. Appl. Phys. 48 04C119-1-04C119-5 (2009). |
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T. Ichihara, T. Hatai, and N. Koshida: "Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode" J. Vac. Sci. Technol. B 28 722-774 (2009). |
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T. Nakada, T. Sato, Y. Matsuba, R. Tanaka, K. Sakemura, N. Negishi,
Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka,
N. Egami, and N. Koshida: "Enhanced output current density of an active-matrix high-efficiency electron emission device (HEED) array with 13.75 μm pixels" J. Vac. Sci. Technol. B 28 735-739 (2009) . |
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A Kojima, H. Ohyi, N. Koshida: "Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source: Proc. SPIE, 7271 72712N (2009), Conference on Alternative Lithographic Technologies (Tuesday 24 February 2009, San Jose, CA, USA). |
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N. Koshida, A. Asami, and B. Gelloz: "Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter" IEDM 2008 Technical Digest 659-662 (2008). |
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B. Gelloz, K. Murata, T. Ohta, M. Ghulinyan: "Lorenzo Pavesi, D. J. Lockwood, and Nobuyoshi Koshida, Stabilization of Porous Silicon Free-Standing Coupled Optical Microcavities by Surface Chemical Modification" ECS Trans. 16 211-220 (2008). |
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B. Gelloz, M. Masunaga, T. Shirasawa, R. Mentek, T. Ohta, and N. Koshida: "Enhanced Controllability of Periodic Silicon Nanostructures by Magnetic Field Anodization" ECS Trans. 16 195-200 (2008). |
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B. Gelloz, H. Koyama and N. Koshida: "Polarization Memory of Blue and Red Luminescence from Nanocrystalline Porous Silicon Treated by High-Pressure Water Vapor Annealing" Thin Solid Films 517 376- 379 (2008). |
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D. Sakai, C. Oshima, T. Ohta, and N. Koshida: "Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer" J. Vac. Sci. Technol. B 26 1782- 1786 (2008). |
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A Kojima, H. Ohyi, N. Koshida: "Sub-30 nm Parallel EB Lithography using Nano-Si Planar Ballistic Electron Emitter" J. Vac. Sci. Technol. B, (2008) in press. |
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M. Ghulinyan, B. Gelloz, T. Ohta, L. Pavesi, D.J. Lockwood, and N. Koshida: "Stabilized porous silicon optical superlattices with controlled surface passivation" Appl. Phys. Lett. 93 061113-115 (2008). |
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D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda: "Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization" Jpn. J. Appl. Phys. 47 7398- 7402 (2008). |
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T. Ohta, B. Gelloz, and N Koshida: "Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode" J. Vac. Sci. Technol. B26 716-719 (2008). |
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N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, and K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, and N. Egami, and N. Koshida: "Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device" J. Vac. Sci. Technol. B26 711-715 (2008). |
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B. Gelloz, M. Sato and N. Koshida: "Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device" Jpn. J. Appl. Phys. 47 2902-2905 (2008). |
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B. Gelloz, M. Sugawara and N. Koshida: "Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters" Jpn. J. Appl. Phys. 47 3123-3126 (2008). |
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Y. Hirano, S. Yamazaki, and N,i Koshida: "Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers" Jpn. J. Appl. Phys. 47 3095-3098 (2008). |
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A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, and N. Koshida: "Energy transfer in porous-silicon/laser-dye composite evidenced by polarization memory of photoluminescence" Appl. Phys. Lett. 91 211902/1-211902/3 (2007). |
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Yoshifumi Watabe, Yoshiaki Honda, and Nobuyoshi Koshida: "Effect of Bi-layer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter" Jpn. J. Appl. Phys. 46 6218-6221 (2007). |
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Y. Okuda, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba*, S. Okazaki, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida: "Low Voltage and High Speed Operation of 640X480 Pixel Ac-tive-matrix HEED (High-efficiency Electron Emission Device) Array for HARP Image Sensor" Proc. Int. Display Workshop (5-8 December, 2007, Sapporo) FED1-3/6. |
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A. Uematsu, T. Kikusui, T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, N. Koshida, Y. Takeuchi, and Y. Mori: "Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter" Brain Research 1163 91-99(2007). |
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Y. Watabe, Y. Honda and N. Koshida: "Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emissionn" Jpn. J. Appl. Phys. 46 2599-2602(2007). |
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H. Yoshimura, T. Sakaguchi, and N. Koshida: "Development of Flexible Electrochromic Device with Thin-Film Configuration" Jpn. J. Appl. Phys. 46 2458-2461(2007). |
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N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida: "Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing" J. Vac. Sci. Technol. B 25 661-666 (2007). |
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B. Gelloz and N. Koshida: "Highly Efficient and Stable Photoluminescene of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure" Jpn. J. Appl. Phys. 46 2429-2433 (2007). |
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D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda: "New design principle and Fabrication Process of Silicon 3-dimensional Photonic Crystal Structures" Jpn. J. Appl. Phys. 46 633-637 (2007). |
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M. Namba, K. Miyakawa, T. Watabe, S. Okabe, K. Tanioka, N. Egami, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, A. Kobayashi, K. Ogusu, N. Koshida: "1-inch 256☓192 Pixel HARP Image Sensor with Active-matrix HEED" J. Inst. Image and TV Eng. 61 387-392 (2007)(In Japanese). |
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B. Gelloz, T. Shibata, R. Mentek, and N. Koshida: "Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon" Mater. Res. Soc. Symp. Proc. 958 L08.02-07 (2007). |
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B. Gelloz, Y. Coffinier, B. Salhi, N. Koshida, G. Patriarche, and R. Boukherroub: "Synthesis and Optical Properties of Silicon Oxide Nanowires" Mater. Res. Soc. Symp. Proc. 958 L05.10-15 (2007). |
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B. Salhi, B. Gelloz, N. Koshida, G. Patriarche, R. Boukherroub: "Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing" physica status solidi (a) 204 1302-1306 (2007). |
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B. Gelloz, T. Shibata and N. Koshida: "Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing" physica status solidi (a) 204 2141-2144 (2007). |
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N. Koshida, T. Ohta, and B.Gelloz: "Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect" Appl. Phys. Lett. 90 163505-07 (2007). |
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T. Ohta, A. Kojima, and N. Koshida: "Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience" J. Vac. Sci. Technol. B 25 524-527 (2007). |
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H. Yoshimura and N. Koshida: "Quick response observed in solid-state electrochromic device with an interfacial barrier structure" Jpn. J. Appl. Phys. 45 3479-3481 (2006). |
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B. Gelloz and N. Koshida: "Highly Enhanced Efficiency and Stability of Photo- and Electro- Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor Annealing" Jpn. J. Appl. Phys. 45 3462-3465 (2006). |
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B. Gelloz, T. Shibata, and N. Koshida: "Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing" Appl. Phys. Lett. 89 191103-05 (2006). |
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T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, T. Kikusui, and N. Koshida: "Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter" Appl. Phys. Lett. 88 043902-04 (2006). |
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Y. Watabe, Y. Honda, and N. Koshida: "Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon" Jpn. J. Appl. Phys. 45 7240-7242 (2006). |
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H. Yoshimura and N. Koshida: "Fast electrochromic effect obtained from solid-state inorganic thin film configuration with a carrier accumulation structure" Appl. Phys. Lett. 88 093509-11 (2006). |
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Y. Watabe, Y. Honda, and N. Koshida: "The characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon device under impulse operation" Jpn. J. Appl. Phys, 45 3645-3647 (2006). |
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K. Tsubaki, T. Komoda and N. Koshida: "Acoustic emission characteristics of nanocrystalline porous silicon device driven as an ultrasonic speaker" Jpn. J. Appl. Phys, 45 3642-3644 (2006). |
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B. Gelloz and N. Koshida: "Highly Enhanced Efficiency and Stability of Photo- and Electro-luminescence of Nano-crystalline Porous Silicon by High-Pressure Water Vapor Annealing" Jpn. J. Appl. Phys, 45 3462-3465 (2006). |
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H. Yoshimura and N. Koshida: "Quick response observed in solid-state electrochromic device with an interfacial barrier structure" Jpn. J. Appl. Phys, 45 3479-3481 (2006). |
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N. Negishi, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida: "Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing" J. Vac. Sci. Technol. B 24 1021-1025 (2006). |
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B. Gelloz and N. Koshida: "Highly enhanced photoluminescence of as-anodized and Electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing" Thin Solid Films 508 406-409 (2006). |
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T. Kihara, T. Harada and N. Koshida: "Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters" Sensors and Actuators A: Physical 125 422-428 (2006). |
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B. Gelloz and N. Koshida: "Mechanism of a remarkable enhancement in the light emission from nanocrystalline porous silicon annealed in high-pressure water vapor" J. Appl. Phys. B 98 123509-15 (2005). |
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T. Ohta, A. Kojima, H. Hirakawa, T. Iwamatsu, and N. Koshida: "Operation of nanocrystalline silicon ballistic emitter in low vacuum and atmospheric pressures" J. Vac. Sci. Technol. B 23 2336-2339 (2005). |
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J. Hirota, A. Kiuchi, and N. Koshida: "Phased array operation of nanocrystalline porous silicon ultrasonic emitters" phys. stat. sol. (c)2 No.9, 3298-3302 (2005). |
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B. Gelloz, H. Sano, R. Boukherroub, D.D.M. Wayner, D.J. Lockwood, and N. Koshida: "Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid" phys. stat. sol. (c)2 No.9, 3273-3277 (2005). |
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B. Gelloz, A. Kojima, and N. Koshida: "Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing" Appl. Phys. Lett. 87, 031107-3 (2005). |
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Akira Kojima and Nobuyoshi Koshida: "Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer" Appl. Phys. Lett. 86, 022102 (2005). |
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S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta: "Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides" J. Appl. Phys. 97, 113506-11 (2005). |
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S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta: "Theoretical investigation of electron-phonon teraction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers" Phys. Rev. B72, 035337-11 (2005). |
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K. Tsubaki, H. Yamanaka, K. Kitada, T. Komoda and N. Koshida: "Three-dimensional Image Sensing in Air by Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon" Jpn. J. Appl. Phys. 44 4436-4439 (2005). |
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T. Kihara, T. Harada, and N. Koshida: "Precise Thermal Characterization of Confined Nanocrystalline Silicon by a 3ω Method" Jpn. J. Appl. Phys. 44 4084-4087 (2005). |
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B. Gelloz, A. Kojima and N. Koshida: "Improved optoelectronic characteristics of nanocrystalline porous silicon by high-pressure water vapor annealing" Mater. Res. Soc. Symp. Proc. 832, 141-146 (2005). |
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K. Tsubaki, T. Komoda and N. Koshida: "Enhancing the sound pressure of thermally induced ultrasonic emitter based on nanocrystalline porous silicon" Mater. Res. Soc. Symp. Proc. 832, 195-200 (2005). |
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Y. Tsuchiya, T. Nakatsukasa, H. Mizuta, S. Oda, A. Kojima, and N. Koshida: "Quasiballistic electron emission from planarized nanocrystalline-Si Cold Cathode" Mater. Res. Soc. Symp. Proc. 832 189-194 (2005). |
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A. Kiuchi, B. Gelloz, A. Kojima, and N. Koshida: "Possible operation of periodically layered anocrystalline porous silicon as an acoustic band crystal device" Mater. Res. Soc. Symp. Proc. 832, 207-212 (2005). |
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B. Gelloz, T. Kanda, T. Uchida, M. Niibe,A. Kojima and N. Koshida: "Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes" Jpn. J. Appl. Phys, 44, 2676-2679 (2005). |
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A. Kiuchi and N. Koshida: "New Operating Mode of Nanocrystalline Silicon Ultrasonic Emitters for Use as Audio Speakers" Jpn. J. Appl. Phys, 44, 2634-2636 (2005). |
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T. Komoda, T. Ichihara, Y. Honda, T. Hatai, T. Baba, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, and N. Koshida: "Fabrication of a 7.6-in-diagonal prototype ballistic electron surface-emitting display on a glass substrate" Journal of the Society for Information Display, 12, 29-35 (2004). |
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T.Ichihara, Y. Honda, T. Baba, T. Komoda, and N. Koshida: "Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes" J. Vac. Sci. Technol. B 22, 1784 (2004). |
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N. Koshida: "2.映像・音響技術におけるナノテクノロジー" 映像情報メディア学会誌, 58; No.9 (2004) 1196-1200（in jpn.). |
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T. Kihara, T. Harada, J. Hirota and N. Koshida: "Ultrasound Emisson Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer" Jpn. J. Appl. Phys., 43 No.5B (2004) 2973-2975. |
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T. Ichihara, T. Baba, T. Komoda and N. Koshida: "Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device" J. Vac. Sci. Technol. B, 22 (3) (2004) 1372- 1376. |
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K. Sakemura, N. Negishi, T. Yamada, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara and N. Koshida: "Development of an advanced high efficiency electro-emission device" J. Vac. Sci. Technol. B, 22 (3) (2004) 1367- 1371. |
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B. Gelloz and N. Koshida: "High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer" Jpn. J. Appl. Phys, 43(2004) 1981-1985. |
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J. Hirota, H. Shinoda and N. Koshida: "Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon" Jpn. J. Appl. Phys, 43(2004) 2080-2082. |
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Y. Nakajima, T. Uchida, H. Toyama, A. Kojima, B. Gelloz and N. Koshida: "A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation" Jpn. J. Appl. Phys, 43(2004) 2076-2079. |
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N. Koshida: "量子サイズナノシリコンの機能と応用－光・電子・音波の放出素子を中心に－" パリティ、19(2004) 14-19（in jpn.). |
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T. Ichihara, T.Hatai, K. Aizawa, T. Komoda, A. Kojima, and N. Koshida: "Key role of nanocrystalline feature in porous polycrystalline silicon diodes for efficient ballistic electron emission" J. Vac. Sci. Technol. B, 22(1) (2004) 57-59. |
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N. Koshida: "光・電子・音を出すシリコンナノ粒子－量子サイズ化によるシリコンテクノロジーの展開－" 学術月報、57(2004)176-180（in jpn). |
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S. Uno, K. Nakazato, S. Yamaguchi,
A. Kojima,
N. Koshida, and H. Mizuta: "New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si" IEEE Trans. Nanotechnology 3(4) (2004) (in press). |
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B. Gelloz,
H. Sano,
R. Boukherroub,
D.D.M. Wayner,
D.J. Lockwood, and N. Koshida: "Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds" Appl. Phys. Lett. 83(2003) 2342-2344. |
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N. Koshida and N. Matsumoto: "Fabrication and quantum properties of nanostructured silicon" Materials Science and Engineering R 40(2003) 169-205. |
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N.Koshida,
B.Gelloz,
A. Kojima,
T.Migita,
Y. Nakajima,
T.Kihara,
T.Ichihara,
Y.Watabe, and T.Komoda: "Photon, Electron and Utlrasonic Emission from Nanocrystalline Porous Silicon Devices" JMat. Res. Soc. Symp. Proc. 737(2003) 801-812. |
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B. Gelloz,
A. Bsiesy, and R. Herino: "Electrically induced luminescence quenching in p+-type and anodically oxidized n-type wet porous silicon" J. Appl. Phys. 94, 2381-2389 (2003). |
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B. Gelloz and N. Koshida: "Effects of Amorphous Carbon Films on the Performance of Porous Silicon Electroluminescence" Mater. Res. Soc. Symp. Proc. 737(2003) 581-586. |
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A. Kojima, and N. Koshida: "An Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon" Jpn. J. Appl. Phys. 42(2003) 2395-2398. |
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Y. Nakajima,
H. Toyama,
T. Uchida,
A. Kojima, and N. Koshida: "Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon device Formed on a p-Type Substrate" Jpn. J. Appl. Phys. 42(2003) 2412-2414. |
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T. Komoda,
Y. Honda,
T. Ichihara,
T. Hatai,
Y. Watabe,
K. Aizawa, and N. Koshida: "Demonstration of a possibility for a large panel BSD (Ballistic Electron Surface-Emitting Display) by fabricating 7.6 inches diagonal prototype model" Society for Information Display 2002 Int. Symp., Digest of Technical Papers, 34(SID, San Jose, 2003). 910-913. |
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B. Gelloz,
A. Halimaoui,
Y. Campidelli,
A. Bsiesy,
N. Koshida, and R. Herino: "Anodic oxidation of p+-type porous silicon having pores uniformly covered with Ge" phys. stat. sol. (a) 197(2003) 123-127. |
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Y. Nakajima,
H. Toyama,
A. Kojima, and N. Koshida: "A solid-state light-emitting device based on ballistic electron excitation using an inorganic material as a fluorescent film" phys. stat. sol. (a) 197(2003) 316-320. |
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A. Kojima and N. Koshida: "A Monte-Carlo simulation of ballistic transport in nanocrystalline silicon diode" phys. stat. sol. (a) 197(2003) 452-457. |
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Y. Osaka,
K. Kohno,
H. Mizuno, and N. Koshida: "Physical properties of SiO2-doped Si films and electroluminescence in metal/SiO2-doped Si/p-Si diodes" Jpn. J. Appl. Phys. 41(2002) 7481-7486. |
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Y. Nakajima,
A. Kojima, and N. Koshida: "Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device" Appl. Phys. Letters 81(2002) 2472-2474. |
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K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "Wire-Free Tactile Sensing Element based on Optical Connection" Proc. 19th Sensor Symposium (2002) 433-436. |
|
K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "A Sensor Skin using Wire-Free Tactile Sensing Elements based on Optical Connection", Proc. 19th Sensor Symposium (2002) 319-322. |
|
T. Komoda,
Y. Honda,
T. Ichihara,
T. Hatai,
Y. Takegawa,
Y. Watabe, and K. Aizawa: "Development of a Low Temperature Process of Ballistic Electron Surface-Emitting Display (BSD) on a Glass Substrate" Society for Information Display 2002 Int. Symp. Digest of Technical Papers, 33, No.2, (SID, San Jose, 2002) 1128-1131 |
|
N. Asamura,
U. K. Saman Keerthi,
T. Migita,
N. Koshida, and H. Shinoda: "Intensifying Thermally Induced Ultrasound Emission", Proc. 19th Sensor Symposium (IEEJ, Tokyo, 2002) 477-482. |
|
T. Ichihara,
Y. Honda,
K. Aizawa
T. Komoda and N. Koshida: "Development of ballistic electron cold cathode by a low temperature processing of polycrystalline silicon films" J. Crystal Growth Special Issue 237-239 (2002) 1915-1919. |
|
Y. Nakajima,
A. Kojima, and N. Koshida: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films" Jpn. J. Appl. Phys. 41(2002) 2707-2709. |
|
T. Migita and N. Koshida: "Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon" Jpn. J. Appl. Phys. 41 (2002) 2588-2590. |
|
N. Koshida: "Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited)" Mater. Sci. & Eng. C724 (2002) 285-289 . |
|
K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "Wire-Free Tactile Sensing Element based on Optical Connection", Proc. 19th Sensor Symposium (2002) (in press). |
|
N. Asamura,
U. K. Saman Keerthi,
T. Migita,
N. Koshida, and H. Shinoda: "Intensifying Thermally Induced Ultrasound Emission" Proc. 19th Sensor Symposium (IEEJ, Tokyo, 2002) in press |
|
N. Koshida,
J. Kadokura,
B. Gelloz,
R. Boukherroub,
D. Wayner, and D. Lockwood: "Electroluminescence Stabilization of Nanocrystalline Porous Silicon Diodes" Int. Symp. Proc. Elecrochem. Soc., Philadelphia, 2002 (in press). |
|
X. Sheng,
A. Kojima,
T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER STRUCTURE 19; PART 1 (2001) 64-67 . |
|
A. Kojima and N. Koshida: "Evidence of enlarged drift length in nanocrystalline porous silicon layers by time-of-flight measurements" Jpn. J. Appl. Phys. 40 (2001) 366-368 . |
|
N. Koshida,
J. Kadokura,
M. Takahashi, and K. Imai: "Stabilization of Porous Silicon Electroluminescence by Surface Capping with Silicon Dioxide Films" Mat. Res. Soc. Symp. Proc. 638 (2001) F18.3.1.-F.18.3.6. |
|
Y. Toriumi,
M. Takahashi, and N. Koshida: "A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection" Mat. Res. Soc. Symp. Proc. 638 (2001) F8.3.1.-F.18.3.6. |
|
Y. Nakajima,
A. Kojima, and N. Koshida: "A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation" Mat. Res. Soc. Symp. Proc. 638 (2001) F4.2.1.-F4.2.6. |
|
A. Kojima,
X. Sheng, and N. Koshida: "Analyses of Ballistic Electron Transport in Nanocrystalline Porous Silicon" Mat. Res. Soc. Symp. Proc. 638 (2001) F3.3.1.-F.3.3.6. |
|
T. Komoda,
T. Ichihara,
Y. Honda,
K. Aizawa, and N. Koshida: "Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrare" Mat. Res. Soc. Symp. Proc. 638 (2001) F4.1.1.-F.4.1.12. |
|
T. Komoda,
Y. Honda,
T. Hatai,
Y. Watabe,
T. Ichihara,
K.Aizawa, and N. Koshida: "Fabrication of Ballistic Electron Surface-Emitting Display on Glass Substrates (Invited)" Society of Information Display, Digest of Technical Papers 32 (2001) 188-191. |
|
M. Takahashi,
Y. Toriumi,
T. Matsumoto,
Y. Masumoto and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators." Appl. Phys. Lett. 76 (2000) 1990-1992. |
|
B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode." J. Appl. Phys. 88(7) (2000) 4391-4324. |
| B. Gelloz , A. Bsiesy and N. Koshida: "Conduction and Luminescent Properties of Wet Porous Silicon", J. Porous Materials 7 (2000) 103-106. |
|
A. Kumagai ,
Y. Kanegawa ,
Y. Suda and N. Koshida: "Improvement of Porous Si Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source" J. Porous Materials 7 (2000) 73-76. |
|
T. Komoda,
Y. Honda,
T. Hatai,
Y. Watabe,
T. Ichihara,
K. Aizawa,
Y. Kondo and N. Koshida : "Matrix flat-panel application of ballistic electron surface-emitting display" Society for Information Display, Digest of Technical Papers 31 (2000) 428-431. |
|
K. Ueno and N. Koshida: "Optical Accessibility of Light-Emissive Nanosilicon Memory" phys. stat. sol. (a) 182 (2000) 579-583. |
|
M. Takahashi,
Y. Toriumi, and N. Koshida: "Current-Induced Optical Effect in Porous Silicon Fabry-Perot Resonators" phys. stat. sol. (a) 182 (2000) 567-571. |
|
K. Ueno and N. Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes" Appl. Phys. Lett. 74 (1999) 93-95. |
|
N. Koshida ,
X. Sheng and T. Komoda: "Quasiballistic Electron Emission from Porous Silicon Diodes" Appl. Surf. Sci. 146 (1999) 371-376. |
|
N. Koshida and B. Gelloz: Wet and Dry Porous Silicon, Currnet Opinion in Colloid and Interface Science, ed. L. Brus (Elsevier Science, Oxford, 1999) p.p. 309-313. |
|
M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides." J. Appl. Phys. 86(9) (1999) 5274-5278. |
|
T. Komoda ,
X. Sheng , N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films." J. Vac. Sci. Technol. B 17(3) (1999) 1076-1079. |
|
N. Koshida,
K. Ueno and X. Sheng: "Field-induced functions of porous Si as a confined system." Journal of Luminescence 80 (1999) 37-42. |
|
H. Mizuno , N. Koshida: "Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation." Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 179-184. |
|
N. Koshida ,
T. Nakajima,
M. Yoshiyama ,
K. Ueno ,
T. Nakagawa and H. Shinoda: "Ultrasound Emission from Porous Silicon: Efficient Thermo-acoustic Function as a Depleted Nanocrystalline System" Mat. Res. Soc. Symp. Proc. 536 (1999) p.p. 105-110. |
|
B. Gelloz ,
T. Nakagawa and N. Koshida: "Enhancing the External Quantum Efficiency of Porous Silicon Leds Beyond 1% by a Post Anodization Electrochemical Oxidation" Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 15-20. |
|
H. Shinoda ,
T. Nakajima ,
K. Ueno & N. Koshida: "Thermally induced ultrasonic emission from porous silicon." Nature 400 (1999) 853-855. |
|
M. Takahashi,
Y. Toriumi,
T. Matsumoto,
Y. Masumoto and N. Koshida: "Nonlinear refractive index change in porous silicon Fabry-Perot resonators." Proc. Int. ECS Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999.10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 35-42. |
|
B. Gelloz and N. Koshida: "Enhancing Efficiency and Stability of Electroluminescence of Porous Silicon Using Electrochemical Techniques" Proc. Int. Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999. 10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 27-34. |
|
N. Koshida ,
B. Gelloz ,
X. Sheng ,
K. Ueno and A. Kojima: "Luminescence and Related Novel Functions of Quantum-sized Nanosilicon. (in Japanese)" Technical Report of IEICE LQE99-16 (1999) 1-6. |
|
S. Tanaka,
H. Koyama and N. Koshida: "Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration" Appl. Phys. Lett. 73 (1998) 2334-2336. |
|
B. Gelloz,
T. Nakagawa and N. Koshida: "Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation." Appl. Phys. Lett. 73 (1998) 2021-2023. |
|
H. Koyama ,
Y. Matsushita and N. Koshida: "Activation of blue emission from oxidized porous silicon by annealing in water vapor." J. Appl. Phys. 82 (1998) . |
|
M. Hashimoto,
T. Koreeda and N. Koshida: "Application of dual-functional MoO3/WO3 bilayer resists to focused ion beam nanolithography" J. Vac. Sci. & Technol. B 16(5) (1998) 2767-2771. |
|
X. Sheng ,
H. Koyama and N. Koshida: "Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes." J. Vac. Sci. & Technol. B 16 (1998) 793-795. |
|
M. Takahashi,
M. Araki and N. Koshida: "Buried Optical Waveguide of Porous Silicon" Jpn. J. Appl. Phys 37 (1998) L1017-L1019. |
|
T. Nakagawa,
H. Sugiyama and N. Koshida: "Fabrication of Periodic Si Nanostructure by Controlled Anodization" Jpn. J. Appl. Phys. 37(Part 1, No. 12B) (1998) 7186-7189. |
|
K. Ueno and N. Koshida: "Negative-Resistance Effects in Electroluminescent Porous Silicon Diodes." Jpn. J. Appl. Phys. 37 (1998) 1096-1099. |
|
X. Sheng and N. Koshida: "Quasi-ballistic Stable Electron Emission from Porous Silicon Cold Cathodes" Mat. Res. Soc. Symp. Proc. 509 (1998) p.p. 193-198. |
|
N. Koshida ,
E. Takizawa ,
H. Mizuno ,
H. Koyama and T. Sameshima: "Electroluminescent Devices on Polycrystalline Silicon Films for Large-Area Applications" Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 151-156. |
|
M. Araki ,
M. Takahashi ,
H. Koyama and N. Koshida: "Performances of Porous Silicon Optical Waveguides." Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 107-112. |
|
T. Matsumoto ,
Y. Masumoto and N. Koshida: "Photo- and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes" Mat. Res. Soc. Symp. Proc. 486 (1998) p. . |
|
Y. Suda ,
K. Obata and N. Koshida: "Observation of Band Dispersions in Photoluminescent Porous Silicon" Phys. Rev. Lett. 80 (1998) . |
|
T. Matsumoto ,
Y. Masumoto ,
S. Nakashima ,
H. Mimura and N. Koshida: "Coupling effect of surface vibration and quantum confinement carriers in porous silicon." Appl. Surf. Sci. 113/114 (1997) L1089-L1091. |
|
T. Oguro ,
H. Koyama ,
T. Ozaki and N. Koshida: "Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices." J. Appl. Phys. 81 (1997) 1407-1412. |
|
X. Sheng ,
T. Ozaki ,
H. Koyama and N. Koshida: "Improved cold electron emission characteristics of electroluminescent porous silicon diodes." J. Vac. Sci. & Technol. B 15 (1997) 1661-1665. |
|
T. Matsumoto ,
Y. Masumoto ,
T. Nakagawa ,
M. Hashimoto ,
K. Ueno and N. Koshida: "Electroluminescence from deuterium-terminated porous silicon." Jpn. J. Appl. Phys. 36 (1997) L1089-L109. |
|
K. Ueno ,
H. Koyama and N. Koshida: "Nonlinear electrical functions of porous silicon light-emitting diodes." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 699-704. |
|
Y. Suda ,
K. Obata ,
A. Kumagai and N. Koshida: "Roles of surface termination in photoluminescence mechanisms of porous silicon." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 455-460. |
|
T. Matsumoto ,
Y. Masumoto and N. Koshida: "Optical properties of deuterium terminated porous silicon." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 449-454. |
|
T. Nakagawa,
H. Koyama and N. Koshida: "Effects of External Magnetic Field on the Formation and Optical Properties of Luminescent Porous Silicon." Proc. ECS Int. Symp. on Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, Montreal, Canada 1997 (ECS, Pennington, 1997) p.p. 253-241. |
|
H. Koyama and N. Koshida: "Spectroscopic analysis of blue-green emission from oxidized porous silicon : possible evidence for Si-nanostructure-based mechanism." Solid State Comm. 103 (1997) 37-41. |
|
M. Araki ,
H. Koyama and N . Koshida: "Functional properties of luminescent porous silicon as a component of optoelectronic integration." Superlattices and Microstructures 22 (1997) 365-370. |
|
X. Sheng ,
H. Koyama and N. Koshida: "Emission characteristics of porous silicon cold cathodes." Thin Solid Films 297 (1997) 314-316. |
|
H. Mizuno ,
H. Koyama and N. Koshida: "Photo-assisted continuous tuning of photoluminescence spectra of porous silicon from red to blue." Thin Solid Films 297 (1997) 61-63. |
|
T. Matsumoto ,
A. Masumoto ,
S. Nakajima and N. Koshida: "Luminescence from deuterium-terminated porous silicon." Thin Solid Films 297 (1997) 31-34. |
|
H. Mizuno ,
H. Koyama and N. Koshida: "Oxide-free blue photoluminescence from photochemically etched porous silicon." Appl. Phys. Lett. 69 (1996) 3779-3781. |
|
T. Nakagawa ,
H. Koyama and N. Koshida: "Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization." Appl. Phys. Lett. 69 (1996) 3206-3208. |
|
M. Araki ,
H. Koyama and N. Koshida: "Fabrication and fundamental properties of an edge-emitting device with step-index porous silicon waveguide." Appl. Phys. Lett. 68(21) (1996) 2999-3000. |
|
M. Araki ,
H. Koyama and N. Koshida: "Controlled electroluminescence of porous silicon diodes with a vertical optical cavity." Appl. Phys. Lett. 52 (1996) 2956-2958. |
|
M. Araki ,
H. Koyama and N. Koshida: "Precisely tuned emission from porous silicon vertical optical cavity in the visible region." J. Appl. Phys. 80 (1996) 4841-4844. |
|
Y. Suda ,
T. Koizumi ,
K. Obata ,
Y. Tezuka ,
S. Shin and N. Koshida: "Electronic surface structures and photoluminescence mechanisms of porous Si." J. Electrochem. Soc. 143 (1996) 2502-2507. |
|
M. Araki ,
H. Koyama and N. Koshida: "Optical Cavity Based on Porous Silicon Superlattice Technology." Jpn. J. Appl. Phys. 35(2) (1996) 1041-1044. |
|
M. Hashimoto ,
S. Watanuki and N. Koshida M. Komuro and N. Atoda: "Dual function of thin MoO3 and WO3 films as negative and positive resists for focused ion beam lithography." Jpn. J. Appl. Phys. 35 (1996) 3665-3669. |
|
H. Koizumi ,
Y. Suda and N. Koshida: "Effects of oxidation on electronic states and photoluminescence properties of porous silicon." Jpn. J. Appl. Phys. 35 (1996) L803-L806. |
|
H. Koyama ,
N. Shima and N . Koshida: "Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon." Phys. Rev. B 53(20) (1996) R13291-R13294. |
|
H. Tanino ,
A. Kuprin ,
Y. Deai and N. Koshida: "Raman study of free-standing porous silicon." Phys. Rev. B 52 (1996) 1937-1947. |
|
T. Matsumoto ,
M. Daimon ,
H. Mimura ,
Y. Kanemitsu and N. Koshida: "Optically induced absorption in porous silicon and its application to logic gates." J. Electrochem Soc. 142 (1995) 3528-3533. |
|
T. Ozaki ,
T. Oguro ,
H. Koyama and N. Koshida: "The Relationship between Photoconduction Effects and Luminescent Properties of Porous Silicon." Jpn. J. Appl. Phys. 34 (1995) 947-950. |
|
N. Koshida ,
H. Mizuno ,
H. Koyama and G. J. Collins: "Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts." Jpn. J. Appl. Phys. 34(Suppl. 34-1) (1995) 92-94. |
|
N. Koshida ,
T. Ozaki and H. Koyama: "Cold electron emission from electroluminescent porous silicon diodes." Jpn. J. Appl. Phys. 34 (1995) L705-L707. |
|
N. Koshida ,
H. Koyama et al.: "Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism." Mat. Res. Soc. Symp. Proc. 358 (1995) 695-700. |
|
H. Koyama and N. Koshida: "Polarization retention of photoluminescence from porous silicon." Phys. Rev. B 52 (1995) 2649-2655. |
|
H. Koyama ,
T. Ozaki , and N. Koshida: "Decay dynamics of the homogeneously-broadened photoluminescence from porous silicon." Phys. Rev. B 52 (1995) R11561-R11564. |
|
N. Koshida: Interrelations between Electrical Properties and Visible Luminescence of Porous Silicon., Porous Silicon Science and Technology, ed. J.C. Vial (Les Ed. de Phys., Marseille, 1995) p.p. 324-328. |
|
M. Araki ,
H. Koyama and N. Koshida: "Precisely tuned optical cavity using porous silicon superlattice structures." Proc Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 139-145. |
|
X. Sheng ,
T. Ozaki ,
H. Koyama and N. Koshida: "Properties of porous silicon LED as a surface-emitting cold cathode." Proc. Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 87-93. |
|
H. Koyama ,
T. Oguro and N. Koshida: "Post-anodization filtered illumination of porous silicon in HF solutions to improve the luminescence characteristics." Appl. Phys. Lett. 65 (1994) 1656-1658. |
|
T. Ozaki ,
M. Araki ,
S. Yoshimura ,
H. Koyama and N. Koshida: "Photoelectronic properties of porous Si." J. Appl. Phys. 76 (1994) 1986-1988. |
|
T. Ikeda ,
M. Baba and N. Koshida: "Transition metal oxide resists for electron-beam and focused-ion-beam lithography." J. Photopolym. Sci. & Technol. 7(3) (1994) 585-594. |
|
T. Ban ,
Y. Suda ,
T. Koizumi ,
H. Koyama ,
Y. Tezuka ,
S. Shin and N. Koshida: "Effects of anodization current density on luminescence properties of porous silicon." Jpn. J. Appl. Phys. 33 (1994) 5603-5607. |
|
L. T. Canham and N. Koshida: Silicon-Based Materials for Light Emission., Semiconductor Si/1994, ed. H. Huff, W. Bergholz and K. Sumino (Electrochem. Soc., Pennington, 1994) p.p. 457-459. |
|
N. Koshida,
H. Koyama, Y. Suda et al.: "Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses." Appl. Phys. Lett. 63(20) (1993) 2774-2776. |
|
N. Koshida ,
H. Koyama ,
Y. Yamamoto and G. Collins: "Visible electroluminescence from porous silicon diodes with an electropolymerized contact." Appl. Phys. Lett. 63(19) (1993) 2655-2657. |
|
Y. Uchida ,
N. Koshida and H. Koyama: "Paramagnetic center in porous silicon : A dangling bond with C3V symmetry." Appl. Phys. Lett. 63(7) (1993) 961-963. |
|
T. Ueno ,
Y. Akiba ,
T. Shinohara ,
H. Koyama ,
N. Koshida and Y. Tarui: "Radiative transition with visible light in electrochemically anodized polycrystalline silicon." Jpn. J. Appl. Phys. 32 (1993) L5-L7. |
|
N. Koshida and H. Koyama: "Optoelecronic characterizations of porous silicon (invited)." MRS Symp. Proc. 283 (1993) p.p. 337-342. |
|
N. Koshida: Optoelectronic Properties of Porous Silicon., Optical Properties of Low Dimensional Silicon Structures, ed. D. Bensahel (Kluwer Acad., Dordrecht, 1993) p.p. 133-138. |
|
N. Koshida and H. Koyama: "Visible electroluminescence from porous silicon." Appl. Phys. Lett. 60(3) (1992) 347-349. |
|
M. Nagasu and N. Koshida: "Photointercalation characteristics of thin WO3 films." J. Appl. Phys. 71 (1992) 398-402. |
|
N. Koshida ,
S. Watanuki ,
K. Yoshida et al.: "Electrical properties of nanometer-width refractory metal line fabricated by focused ion beam and oxide resists." Jpn. J. Appl. Phys. 3 (1992) 4483-4486. |
|
N. Koshida and H. Koyama: "Visible electro- and photoluminescence from porous silicon and its related optoelectronic properties." MRS Symposium Proc. 256 (1992) p.p. 219-222. |
|
N. Koshida and H. Koyama: "Visible photo- and electroluminescent properties of porous silicon." Nanotechnology 3 (1992) 192-195. |
|
N. Koshida ,
Y. Kiuchi and S. Yoshimura: "Photoconduction effects of porous Si in the visible region." Proc. 10th Symp. Photoelectron. Image Devices, London 1991 (IOP Pub., Bristol, 1992) p.p. 377-384. |
|
H. Koyama and N. Koshida: "Photoelectrochemical effects of surface modification of n-type Si with porous layer." J. Electrochem. Soc. 138 254-260 (1991). |
|
N. Koshida, K. Yoshida, S. Watanuki, M. Komuro and N. Atoda: "50 nm metal line fabrication by focused ion beam and oxide resists." Jpn. J. Appl. Phys. 30 3246-3249 (1991) |
|
N. Koshida and N. Hirayama: "Ion implantation induced change in fibrillar morphology of polyacetylene films." Nucl. Instrum. Meth. B 59/60 1292-1294 (1991). |
|
N. Koshida and K. Echizenya:" "Characterization studies of p-type porous Si and its photoelectrochemical activation." J. Electrochem Soc. 138 837-841 (1991). |
|
K. Yoshida, S. Watanuki, N. Koshida, M. Komuro and N. Atoda:" "Focused ion beam lithography with oxide resists and its application to fabrication of fine metallic patterns." Denki Kagaku (J. Electrochem. Soc. Jpn.) 59 614-618 (1991) [in Japanese]. |
|
N. Koshida and H. Koyama: "Efficient visible photoluminescence from porous silicon." Jpn. J. Appl. Phys. 30 L1221-L1223 (1991). |
|
H. Koyama, M. Araki, Y. Yamamoto and N. Koshida: "Visible photoluminescence of porous silicon and its related optical properties." Jpn. J. Appl. Phys. 30 3606-3609 (1991). |
|
N. Koshida and H. Yabumoto: "Effects of ion implantation on the photoelectrochemical properties of TiO2." Nucl. Instrum. Meth. B 59/60 1236-1239 (1991). |
|
N. Koshida and K. Saito: "Work function of a high-Tc superconductor,YBa2Cu3O7." Jpn. J. Appl. Phys. 29 L1635-L1637 (1990). |
|
M. Nagasu and N. Koshida: "Photointercalation effect of thin WO3 films." Appl. Phys. Lett. 57 1325-1326 (1990). |
|
N. Koshida, H. Wachi, K. Yoshida, M. Komuro and N. Atoda: "Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists." Jpn. J. Appl. Phys. 29(10) 2299-2302 (1990). |
|
N. Koshida, Y. Ichinose, K. Ohtaka, M. Komuro and N. Atoda: "Microlithographic behavior of transition metal oxide resists exposed to focused ion beam." J. Vac. Sci. Technol. B 8 1093-1096 (1990). |
|
M. Nagasu and N. Koshida: "Photointercalation induced change in optical and electrical properties of thin WO3films", J. TV Engrs. Jpn. 44, 1758-1761 (1990) [in Japanese]. |