Name of your university Tokyo University of Agriculture and Technology
Full name KOSHIDA Nobuyoshi
Year of birth 1943
Current appointment (position and institution) Professor, Laboratory of Electron Device Engineering, Department of Electrical and Electronic Engineering, Faculty of Technology
Address 2-24-16, Naka-cho, Tokyo 184-8588, Japan
Telephone +81-42-388-7128
Fax +81-42-385-5395
E-mail koshida@cc.tuat.ac.jp
URL http://www.tuat.ac.jp/~koslab/
Fields of general research Semiconductor Devices and Materials
Fields of specialization Quantum Properties of Nanostructured Silicon
Nanofabrication Technology
Electronic and Photonic Devices
Subject of research work and/or titles of lecture and discussion Silicon-Based Light-Emitting Device
Electronic Applications of Quantum-sized Silicon
Monolithic Functional Integration
Research reports (papers and reviews) within recent 5 years

1. Y. Nakajima, A. Kojima, and N. Koshida, Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device, Appl. Phys. Lett. 81, 2472-2474 (2002).

2. N. Koshida, A. Kojima, T. Migita, and Y. Nakajima, Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited), Mater. Sci. & Eng. C 19, 285-289 (2002).

3. X. Sheng, A. Kojima, T. Komoda, and N. Koshida, Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure, J. Vac. Sci. & Technol. B 19, 64-67 (2001).

4. B. Gelloz and N. Koshida, Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode, J. Appl. Phys. 88, 4319-4324 (2000).

5. H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Thermally Induced ultrasonic emission from porous silicon, Nature 400, 853-855 (1999).
Research theme of doctor course students in your laboratory

- Study on ballistic electron transport in nanocrystalline silicon layer.
- Development of ballistic surface-emitting display.
- Thermally induced ultrasonic emission from nanocrystalline silicon.
- Development of nanocrystalline silicon thermo-acoustic devices.
- Silicon-based monolithic optoelectronic integration.
- Development of solid-state ballistic lighting device.
French researchers You collaborated with

Dr. J. -C Vial, CNRS-Universite J. Fourier Grenoble I
Prof. R. Herino, Universite J. Fourier Grenoble I
Dr. R. Romestain, CNRS-Universite J. Fourier Grenoble I
Dr. J. -N. Chazalviel, CNRS-Ecole Polytechnique, Palaiseau
Dr. S. T. Purcell, CNRS-Universite Claude Bernard Lyon I
Assoc. Prof. Gilles Lerondel, University of Technology Troyes
Prof. J. Zyss, Ecole Normale Superieure, Cachan
Dr. F. Bassani, CNRS-Campus Luminy, Marseille